Zinc oxide : a material for micro- and optoelectronic applications : [proceedings of the NATO Advanced Research Workshop on Zinc Oxide as a Material for Micro- and Optoelectronic Applications, St. Petersburg, Russia, 23-25 June 2004
معرفی کتاب «Zinc oxide : a material for micro- and optoelectronic applications : [proceedings of the NATO Advanced Research Workshop on Zinc Oxide as a Material for Micro- and Optoelectronic Applications, St. Petersburg, Russia, 23-25 June 2004» نوشتهٔ Robert Triboulet, Vicente Munoz-Sanjosé, Ramon Tena-Zaera, Mari Carmen Martinez-Tomas (auth.), Norbert H. Nickel, Evgenii Terukov (eds.)، منتشرشده توسط نشر Springer Netherlands در سال 2005. این کتاب در فرمت pdf، زبان انگلیسی ارائه شده است.
Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on “Zinc oxide as a material for micro- and optoelectronic applications”, held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 – 40 meV and 60 – 70 meV. The Scope of Zinc Oxide Bulk Growth....Pages 3-14 Growth Mechanism of ZnO Layers....Pages 15-24 Kinetics of High-Temperature Defect Formation in ZnO in the Stream of Oxygen Radicals....Pages 25-34 Electrical Properties of ZnO....Pages 37-46 Electrical Properties of ZnO Thin Films and Single Crystals....Pages 47-57 Structure, Morphology, and Photoluminescence of ZnO Films....Pages 59-68 Optics and Spectroscopy of Point Defects in ZnO....Pages 69-81 Whispering Gallery Modes in Hexagonal Zinc Oxide Micro- and Nanocrystals....Pages 83-98 Properties of Dislocations in Epitaxial ZnO Layers Analyzed by Transmission Electron Microscopy....Pages 99-111 Muon Spin Rotation Measurements on Zinc Oxide....Pages 115-123 Hydrogen Donors in Zinc Oxide....Pages 125-132 Hydrogen-Related Defects in ZnO Studied by IR Absorption Spectroscopy....Pages 133-144 Influence of the Hydrogen Concentration on H Bonding in Zinc Oxide....Pages 145-155 Valence Band Ordering and Magneto-Optical Properties of Free and Bound Excitons in ZnO....Pages 159-170 Fundamental Optical Spectra and Electronic Structure of ZnO Crystals....Pages 171-182 Photo-Induced Localized Lattice Vibrations in ZnO Doped with 3d Transition Metal Impurities....Pages 183-194 ZnO Window Layers for Solar Cells....Pages 197-209 ZnO/AlGaN Ultraviolet Light Emitting Diodes....Pages 211-216 ZnO Transparent Thin-Film Transistor Device Physics....Pages 217-224 Zinc Oxide Thin-Film Transistors....Pages 225-238
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