Wide Bandgap Semiconductor-Based Electronics

Advances in wide bandgap semiconductor materials are enabling the development of a new generation of power semiconductor devices that far exceed the performance of silicon-based devices. These technologies offer potential breakthrough performance for a wide range of applications, including high-power and RF electronics, deep-UV optoelectronics, quantum information and extreme-environment applications. This reference text provides comprehensive coverage of the challenges and latest research in wide and ultra-wide bandgap semiconductors. Leading researchers from around the world provide reviews on the latest development of materials and devices in these systems. The book is an essential reference for researchers and practitioners in the field of wide bandgap semiconductors and power electronics, and valuable supplementary reading for advanced courses in these areas. Key Features Provides comprehensive coverage of wide bandgap semiconductor-based electronics Covers both materials and devices Includes cutting-edge research not covered in other books Very experienced editors - they have produced 19 other books in related areas PRELIMS.pdf Preface References Acknowledgements Editor biography Fan Ren S J Pearton Contributor list CH001.pdf Chapter 1 Low-dimensional β-Ga2O3 semiconductor devices 1.1 Introduction 1.1.1 Preparation of low-dimensional Ga2O3 nanostructures 1.1.2 Contact properties of β-Ga2O3 nanodevices 1.1.3 The ohmic contacts of β-Ga2O3 nanobelt devices 1.1.4 β-Ga2O3 nanobelt Schottky contacts 1.2 β-Ga2O3-based nanoelectronic devices 1.2.1 Single β-Ga2O3 nanobelt-based field-effect transistors 1.2.2 β-Ga2O3 nanobelt-based heterostructured transistors 1.2.3 β-Ga2O3 nanobelt-based Schottky barrier diode 1.3 Conclusion References CH002.pdf Chapter 2 β-Ga2O3 power field-effect transistors 2.1 Introduction 2.2 Key parameters of a β-Ga2O3 power field-effect transistor 2.3 Planar depletion-mode transistors 2.4 Planar enhancement-mode transistors 2.5 Vertical depletion-mode transistors 2.6 Vertical enhancement-mode transistors 2.7 Homojunction HEMT 2.8 Heterojunction HEMT 2.9 Nanomembrane transistors 2.10 Conclusion References CH003.pdf Chapter 3 Beta gallium oxide (β-Ga2O3) nanomechanical transducers: fundamentals, devices, and applications 3.1 Introduction 3.2 β-Ga2O3 circular drumhead resonators 3.3 Resonant solar-blind ultraviolet (SBUV) transducers 3.3.1 Resonator 3.3.2 Oscillator 3.3.3 Dual-modality transducer 3.4 Conclusions and future perspectives References CH004.pdf Chapter 4 Epitaxial growth of monoclinic gallium oxide using molecular beam epitaxy 4.1 The properties of Ga2O3 4.1.1 Polymorphs 4.1.2 Crystal structure, electronics, and thermal properties of β-Ga2O3 4.1.3 Optical properties of MBE-grown β-Ga2O3 4.2 Molecular beam epitaxy 4.3 Growth modes 4.4 Epitaxial growth of β-Ga2O3 thin films by MBE 4.4.1 Growth of β-Ga2O3 from an elemental Ga source using PAMBE 4.4.2 Growth of β-Ga2O3 using a Ga2O3 compound source 4.4.3 Growth of β-Ga2O3 using ozone-MBE 4.5 Investigation of deep level defects and traps in MBE-grown β-Ga2O3 4.6 The status of dopants in MBE-grown β-Ga2O3 4.7 β-(AlxGa1−x)2O3/Ga2O3 heterostructures and superlattices 4.8 Summary References CH005.pdf Chapter 5 Defects and carrier lifetimes in Ga2O3 5.1 Introduction 5.1.1 Summary of the results of theoretical and experimental defect and impurity studies in β-Ga2O3 5.1.2 Centers active in recombination 5.2 Conclusions Acknowledgments References CH006.pdf Chapter 6 Breakdown in Ga2O3 rectifiers—the role of edge termination and impact ionization 6.1 Introduction 6.2 The evolution of rectifier design and performance 6.3 Degradation mechanisms in rectifiers 6.3.1 Reverse bias 6.3.2 Forward bias 6.3.3 Carrier multiplication mechanisms 6.4 Measurement of impact ionization coefficients and their temperature dependence 6.5 Edge termination methods 6.6 The choice of dielectric material for a field plate 6.7 Summary and conclusions Acknowledgments References CH007.pdf Chapter 7 Radiation damage in Ga2O3 materials and devices 7.1 Introduction 7.2 Basic radiation damage measurement quantities 7.2.1 The importance of radiation damage in electronics 7.2.2 Radiation damage in wide bandgap semiconductors 7.2.3 Summary of radiation damage studies in Ga2O3 7.2.4 Dominant defects induced by proton irradiation 7.3 Conclusions Acknowledgments References CH008.pdf Chapter 8 Optical properties of Ga2O3 nanostructures 8.1 Introduction 8.2 Optical parameters of Ga2O3 8.2.1 Optical processes in semiconductors and insulators 8.2.2 Gallium oxide as an optical material 8.2.3 Ga2O3 nano- and microstructures 8.3 Luminescence of doped Ga2O3 8.3.1 Transition metal ion doping (Cr, Ni, Mn, and Zn) 8.3.2 Rare-earth ion doping (Er, Eu, Gd, Tb, Dy, and Nd) 8.3.3 Sn and Si doping 8.3.4 Al and In doping and alloying—ternary oxides 8.3.5 Other dopants 8.4 Optical confinement in Ga2O3 microstructures 8.4.1 Waveguiding in Ga2O3 8.4.2 Fabry–Pérot resonant cavities 8.4.3 Distributed Bragg reflector based microcavities 8.5 Summary, outlook, and prospective work References CH009.pdf Chapter 9 Band alignment of various dielectrics on Ga2O3, (AlxGa1−x)2O3, and (InxGa1−x)2O3 9.1 Introduction 9.1.1 (AlxGa1−x)2O3 9.1.2 (InxGa1−x)2O3 9.2 Band alignment principles 9.3 Measuring band offset 9.4 Bandgap determination 9.4.1 Onset of inelastic losses using XPS 9.4.2 Reflection electron energy loss spectroscopy 9.4.3 Ultraviolet–visible spectroscopy 9.5 Choice of dielectric 9.6 Reported band offsets 9.6.1 Gate dielectrics on Ga2O3, (AlxGa1−x)2O3, and (InxGa1−x)2O3 9.6.2 Al2O3 9.6.3 SiO2 and HfSiO4 9.6.4 Indium tin oxide and aluminum zinc oxide 9.6.5 InN 9.6.6 CuI 9.7 Conclusion References CH010.pdf Chapter 10 The effect of growth parameters on the residual carbon concentration in GaN high electron mobility transistors: theory, modeling, and experiments 10.1 Introduction 10.1.1 Opportunities and challenges for GaN based devices 10.1.2 Carbon impurity and related defects in GaN 10.2 Correlation between carbon concentration and growth conditions 10.2.1 The effects of MOCVD growth parameters 10.3 Theory and modeling of carbon incorporation 10.3.1 The surface reconstruction of GaN 10.3.2 The effects of carrier gas 10.3.3 The thermodynamic model of impurity incorporation 10.3.4 The effects of the Ga precursor 10.4 Conclusions References CH011.pdf Chapter 11 High Al-content AlGaN-based HEMTs 11.1 Introduction 11.2 Figures-of-merit suggest performance advantages for AlGaN-channel HEMTs 11.2.1 Power switching figures-of-merit 11.2.2 RF figures-of-merit 11.3 Ohmic contacts for high Al-content AlGaN 11.4 AlGaN-channel HEMTs 11.4.1 Early work in AlGaN-channel HEMTs 11.4.2 Recent work in high Al-content HEMTs 11.4.3 Enhancement-mode HEMTs 11.4.4 Toward high current density in AlGaN-channel HEMTs 11.4.5 RF performance of high Al-content HEMTs 11.5 Breakdown properties of high Al-content transistors 11.6 Other nascent AlGaN HEMT research 11.6.1 Pulsed I–V 11.6.2 Reliability 11.6.3 Extreme temperature operation 11.6.4 Radiation performance 11.7 Summary Acknowledgement References CH012.pdf Chapter 12 Understanding interfaces for homoepitaxial GaN growth 12.1 Introduction 12.2 Surface interface structure 12.2.1 Offcut 12.2.2 Wafer bow 12.2.3 Surface polish and morphology 12.3 Chemical interfaces 12.4 Effects on device performance 12.4.1 Surface morphology effects 12.4.2 Chemical interface effects 12.5 Conclusion Acknowledgements References CH013.pdf Chapter 13 Gas sensors based on wide bandgap semiconductors 13.1 Introduction 13.2 An AlGaN/GaN HEMT-based ethanol sensor 13.3 AlGaN/GaN HEMT-based ammonia sensor 13.4 The AlGaN/GaN HEMT-based carbon dioxide sensor 13.5 The AlGaN/GaN HEMT-based hydrogen sensor with a water blocking layer 13.6 Conclusion Acknowledgments References CH014.pdf Chapter 14 Modeling of AlGaN/GaN pH sensors 14.1 Introduction 14.2 Background 14.2.1 Experimental review 14.2.2 Simulation review 14.3 Simulation methodology: an open-gate high electron mobility transistor as pH sensor 14.3.1 Device structure 14.3.2 Two-dimensional electron gas 14.3.3 Electrolyte 14.3.4 Semiconductor 14.3.5 Inner and outer Helmholtz regions 14.3.6 Interface regions 14.3.7 Boundary conditions 14.4 Results: a pH GaN-based HEMT sensor with EDL and specific adsorption finite-element modeling 14.4.1 Understanding the 2DEG as a sensor response 14.4.2 Equilibrium reaction rate 14.4.3 Passivation charge 14.4.4 Linear 2DEG sensor response 14.4.5 Drain bias 14.5 Comparing simulation work with experimental results 14.6 Future work References CH015.pdf Chapter 15 The potential and challenges of in situ microscopy of electronic devices and materials 15.1 Introduction 15.2 Materials and characterization techniques 15.2.1 The material properties and working principle of AlGaN/GaN HEMTs 15.2.2 Material and device characterization using the in situ TEM technique 15.3 AlGaN/GaN HEMT reliability study 15.3.1 Degradation in the GaN HEMT 15.3.2 AlGaN/GaN HEMT characterization techniques 15.3.3 GaN HEMT reliability study using an in situ TEM study 15.4 Future directions Acknowledgement References CH016.pdf Chapter 16 Vertical GaN-on-GaN power devices 16.1 Introduction 16.2 Vertical GaN p–n diodes 16.2.1 Ion implantation 16.2.2 Beveled field plate 16.2.3 Mesa termination 16.2.4 Plasma-based edge termination 16.2.5 Leakage mechanism 16.3 Vertical GaN Schottky barrier diodes 16.3.1 Carbon doping in the drift layer 16.3.2 Double drift layer 16.3.3 Effect of buffer layer thickness 16.3.4 Edge termination 16.3.5 Leakage mechanism 16.4 Vertical GaN advanced power rectifiers 16.4.1 Vertical GaN MPS rectifiers 16.4.2 Vertical GaN JBS rectifiers 16.4.3 Vertical GaN TMBS rectifiers 16.5 Normally-off vertical GaN power transistors 16.5.1 Vertical GaN CAVETs 16.5.2 Vertical GaN trench MOSFETs 16.5.3 Vertical GaN JFETs 16.5.4 Vertical GaN FinFETs 16.6 Selective area doping 16.7 Conclusion References CH017.pdf Chapter 17 Electric-double-layer-modulated AlGaN/GaN high electron mobility transistors (HEMTs) for biomedical detection 17.1 Introduction 17.2 Fabrication of sensors 17.2.1 Fabrication of HEMT sensors 17.2.2 Antibody and DNA aptamer immobilization 17.3 Principles and characteristics of EDL AlGaN/GaN HEMT sensors 17.4 Beyond the Debye length for protein detection in physiological samples 17.4.1 Protein detection in 1X PBS and human serum 17.4.2 Tunable and amplified sensitivity 17.4.3 Portable devices for personal healthcare 17.5 Summary References CH018.pdf Chapter 18 Irradiation effects on high aluminum content AlGaN channel devices 18.1 Introduction 18.2 SRIM modeling 18.3 Device fabrication overview 18.4 Proton irradiation 18.5 Alpha irradiation 18.6 Summary and conclusion References CH019.pdf Chapter 19 BeMgZnO wide bandgap quaternary alloy semiconductor 19.1 Introduction 19.2 Theoretical studies 19.3 Material growth 19.3.1 MBE of BeMgZnO 19.3.2 Other growth methods 19.4 Compositional and optical characterizations of BeMgZnO 19.5 Applications of BeMgZnO 19.5.1 BeMgZnO/ZnO HFETs 19.5.2 Other applications 19.6 Summary References CH020.pdf Chapter 20 Growth and properties of hexagonal boron nitride (h-BN) based alloys and quantum wells 20.1 Introduction and unique properties of h-BN 20.2 Prospects of h-BN-based alloys and heterostructures 20.3 Epitaxy growth and properties of h-BGaN alloys and QWs 20.3.1 Epitaxial growth of h-GaxB1−xN alloys 20.3.2 Growth of h-BGaN QWs and photoluminescence emission properties 20.3.3 Probing the critical thickness and phase separation effects in h-GaBN/BN heterostructures 20.4 Epitaxy growth and properties of h-(BN)C semiconductor alloys 20.4.1 BN-rich h-(BN)1−x(C2)x alloys 20.4.2 C-rich h-(BN)1−x(C2)x alloys 20.5 Concluding remarks Acknowledgement References CH021.pdf Chapter 21 Recent advances in SiC/diamond composite devices 21.1 Introduction 21.2 Silicon carbide 21.2.1 SiC power devices 21.2.2 Technological challenges 21.3 Diamond 21.3.1 Doped diamond 21.3.2 Diamond based devices 21.3.3 Technical challenges 21.4 Diamond/SiC composite devices 21.4.1 Thermal management 21.4.2 Device passivation 21.4.3 Diamond/SiC heterojunctions 21.5 PCD/SiC heterojunctions 21.5.1 Experimental details 21.5.2 Morphological characterization of the BDD films 21.5.3 Electrical characteristics of the BDD films 21.6 Conclusions References "Advances in wide bandgap semiconductor materials are enabling the development of a new generation of power semiconductor devices that far exceed the performance of silicon-based devices. These technologies offer potential breakthrough performance for a wide range of applications, including high-power and RF electronics, deep-UV optoelectronics, quantum information and extreme-environment applications. This reference text provides comprehensive coverage of the challenges and latest research in wide and ultra-wide bandgap semiconductors. Leading researchers from around the world provide reviews on the latest development of materials and devices in these systems. The book is an essential reference for researchers and practitioners in the field of wide bandgap semiconductors and power electronics, and valuable supplementary reading for advanced courses in these areas." -- Prové de l'editor