Two-Dimensional Systems: Physics and New Devices : Proceedings of the International Winter School, Mauterndorf, Austria, February 24–28, 1986

Front Matter....Pages I-IX Front Matter....Pages 1-1 New Epitaxial Growth Methods and Their Application to Quantum Wells and 2DEG Structures....Pages 2-11 Metalorganic MBE — A New Technique for the Growth of III–V Semiconductor Layers....Pages 12-23 Recent Developments in MBE Growth and Properties of Hg 1-x Cd x Te/CdTe Superlattices....Pages 24-32 Transport Properties of Two-Dimensional Electron and Hole Gases in GaAs/AlGaAs Heterostructures....Pages 33-41 In Situ Study of MBE Growth Mechanisms Using RHEED Techniques — Some Consequences of Multiple Scattering....Pages 42-51 Growth Mode and Interface Structure of MBE Grown SiGe Structures....Pages 52-60 Front Matter....Pages 61-61 Elementary Tight-Binding Theory of Schottky-Barrier and Heterojunction Band Line-Ups....Pages 62-71 Electrical Measurements of Band Discontinuities at Heterostructure Interfaces....Pages 72-82 Heuristic Approach to Band-Edge Discontinuities in Heterostructures....Pages 83-93 Front Matter....Pages 95-95 Quantum Tunnelling of Electrons Through III–V Heterostructure Barriers....Pages 96-106 Recent Results on III–V Superlattices and Quantum Well Structures....Pages 107-119 Envelope Function Calculations for Superlattices....Pages 120-129 Optical and Electronic Properties of Si/SiGe Superlattices....Pages 130-139 Resonant Tunneling Devices and Optoelectronic Ge/Si Superlattice Structures....Pages 140-153 Front Matter....Pages 155-155 Far Infrared Studies of Shallow Donors in GaAs-AlGaAs Quantum Wells....Pages 156-165 Magneto-Impurities and Quantum Wells....Pages 166-174 The δ(z) Doping Layer: Impurities in the 2-d World of Layered Systems....Pages 175-182 Front Matter....Pages 183-183 Quantum Hall Effect Experiments at Microwave Frequencies....Pages 184-193 The Fractional Quantum Hall Effect in GaAs-GaAlAs Heterojunctions....Pages 194-203 Density of States of Landau Levels from Activated Transport and Capacitance Experiments....Pages 204-217 Front Matter....Pages 183-183 Density of States of Landau Levels from Specific Heat and Magnetization Experiments....Pages 218-227 The Integer Quantum Hall Effect: An Introduction to the Present State of the Theory....Pages 228-235 The Fractional Quantum Hall Effect....Pages 236-247 Front Matter....Pages 249-249 Microwave Performances of GaAlAs/GaAs Heterostructure Devices....Pages 250-259 Luminescence and Transport Properties of GaAs Sawtooth Doping Superlattices....Pages 260-269 Physics and Applications of Doping Superlattices....Pages 270-284 Electronic Excitations in Microstructured Two-Dimensional Systems....Pages 285-294 Front Matter....Pages 295-295 Carrier Transport in Semiconductor Devices of Very Small Dimensions....Pages 296-303 Parallel-Transport Experiments in 2D Systems....Pages 304-314 Time-Resolved Spectroscopy of Hot Carriers in Quantum Wells....Pages 315-325 Back Matter....Pages 327-330 In the series of International Winter Schools on New Developments in Solid State Physics, the fourth one was devoted to the subject: "Two Dimensional Systems: Physics and Devices". For the second time the pro ceedings of one of these Winter Schools appear as a volume in the Springer Series in Solid-State Sciences (the earlier proceedings were published as Vol. 53). The school was held in the castle of MauterndorfjSalzburg (Austria) February 24-28, 1986. These proceedings contain contributions ba:sed on the thirty invited lectures. The school was attended by 179 registered participants (40% students), who came from western European countries, the United States of America, Japan, the People's Republic of China and Poland. As far as the subjects are conterned, several papers deal with the growth and characterization of heterostructures. Dynamical RHEED tech niques are described as a tool for in situ studies of MBE growth mech anisms. Various growth techniques, including MBE, MOMBE, MOCVD and modifications of these, are discussed. The limiting fa.ctors for the carrier mobilities and the inftuence of the spacer thickness in single het erostructures of GaAs/GaAIAs seem to be understood and are no longer a matter of controversy. In addition, the growth of two fascinating systems, Si/SiGe and Hg _ Cd Te/CdTe, is discussed in detail