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"Since the discovery of the transistor effect in 1947 by a research team at Bell Telephone Laboratories (now Nokia Bell Labs.), the semiconductor-device field has grown rapidly. Coincident with this growth, the semiconductor-device literature has expanded and diversified. For access to this massive amount of information, there is a need for a book giving a comprehensive introductory account of device physics and operational principles, with references. With the intention of meeting such a need, the First, Second and Third Editions of Physics of Semiconductor Devices were published in 1969, 1981 and 2007, respectively. It is perhaps somewhat surprising that the book has so long held its place as one of the main textbooks for advanced undergraduate and graduate students in applied physics, electrical and electronics engineering, and materials science. Because the book includes much useful information on material parameters and device physics, it is also a major reference for engineers and scientists in semiconductor-device research and development. To date, the book is one of the most, if not the most, cited works in contemporary engineering and applied science publications with over 55,000 citations (Google Scholar)." -- Provided by publisher. Cover Title Page Copyright Preface Author Biography Introduction Part I: Semiconductor Physics 1 Physics and Properties of Semiconductors—A Review 1.1 INTRODUCTION 1.2 CRYSTAL STRUCTURE 1.3 ENERGY BANDS AND ENERGY GAP 1.4 CARRIER CONCENTRATION AT THERMAL EQUILIBRIUM 1.5 CARRIER‐TRANSPORT PHENOMENA 1.6 PHONON, OPTICAL, AND THERMAL PROPERTIES 1.7 HETEROJUNCTIONS AND NANOSTRUCTURES 1.8 BASIC EQUATIONS AND EXAMPLES REFERENCES PROBLEMS Part II: Device Building Blocks 2 p–n Junctions 2.1 INTRODUCTION 2.2 DEPLETION REGION 2.3 CURRENT–VOLTAGE CHARACTERISTICS 2.4 JUNCTION BREAKDOWN 2.5 TRANSIENT BEHAVIOR AND NOISE 2.6 TERMINAL FUNCTIONS 2.7 HETEROJUNCTIONS REFERENCES 3 Metal–Semiconductor Contacts 3.1 INTRODUCTION 3.2 FORMATION OF BARRIER 3.3 CURRENT TRANSPORT PROCESSES 3.4 MEASUREMENT OF BARRIER HEIGHT 3.5 DEVICE STRUCTURES 3.6 OHMIC CONTACT REFERENCES PROBLEMS 4 Metal–Insulator–Semiconductor Capacitors 4.1 INTRODUCTION 4.2 IDEAL MIS CAPACITOR 4.3 SILICON MOS CAPACITOR 4.4 CARRIER TRANSPORT IN MOS CAPACITOR REFERENCES PROBLEMS Part III: Transistors 5 Bipolar Transistors 5.1 INTRODUCTION 5.2 STATIC CHARACTERISTICS 5.3 COMPACT MODELS OF BIPOLAR TRANSISTORS 5.4 MICROWAVE CHARACTERISTICS 5.5 RELATED DEVICE STRUCTURES 5.6 HETEROJUNCTION BIPOLAR TRANSISTOR 5.7 SELF‐HEATING EFFECTS REFERENCES PROBLEMS 6 MOSFETs 6.1 INTRODUCTION 6.2 BASIC DEVICE CHARACTERISTICS 6.3 NONUNIFORM DOPING AND BURIED‐CHANNEL DEVICE 6.4 DEVICE SCALING AND SHORT‐CHANNEL EFFECTS 6.5 MOSFET STRUCTURES 6.6 CIRCUIT APPLICATIONS 6.7 NCFET AND TFET 6.8 SINGLE‐ELECTRON TRANSISTOR REFERENCES PROBLEMS 7 Nonvolatile Memory Devices 7.1 INTRODUCTION 7.2 THE CONCEPT OF FLOATING GATE 7.3 DEVICE STRUCTURES 7.4 COMPACT MODEL OF FLOATING‐GATE MEMORY CELLS 7.5 MULTI‐LEVEL CELLS AND 3‐DIMENSIONAL STRUCTURES 7.6 APPLICATIONS AND SCALING CHALLENGES 7.7 ALTERNATIVE STRUCTURES REFERENCES PROBLEMS 8 JFETs, MESFETs, and MODFETs 8.1 INTRODUCTION 8.2 JFET AND MESFET 8.3 MODFET REFERENCES PROBLEMS Part IV: Negative‐Resistance And Power Devices 9 Tunnel Devices 9.1 INTRODUCTION 9.2 TUNNEL DIODE 9.3 RELATED TUNNEL DEVICES 9.4 RESONANT‐TUNNELING DIODE REFERENCES PROBLEMS 10 IMPATT Diodes, TED, and RST Devices 10.1 INTRODUCTION 10.2 IMPATT DIODES 10.3 TRANSFERRED‐ELECTRON DEVICES 10.4 REAL‐SPACE‐TRANSFER DEVICES REFERENCES PROBLEMS 11 Thyristors and Power Devices 11.1 INTRODUCTION 11.2 THYRISTOR CHARACTERISTICS 11.3 THYRISTOR VARIATIONS 11.4 OTHER POWER DEVICES REFERENCES PROBLEMS Part V: Photonic Devices And Sensors 12 LEDs and Lasers 12.1 INTRODUCTION 12.2 RADIATIVE TRANSITIONS 12.3 LIGHT‐EMITTING DIODE (LED) 12.4 LASER PHYSICS 12.5 LASER OPERATING CHARACTERISTICS 12.6 SPECIALTY LASERS REFERENCES PROBLEMS 13 Photodetectors and Solar Cells 13.1 INTRODUCTION 13.2 PHOTOCONDUCTOR 13.3 PHOTODIODES 13.4 AVALANCHE PHOTODIODE 13.5 PHOTOTRANSISTOR 13.6 CHARGE‐COUPLED DEVICE (CCD) 13.7 METAL–SEMICONDUCTOR–METAL PHOTODETECTOR 13.8 QUANTUM‐WELL INFRARED PHOTODETECTOR (QWIP) 13.9 SOLAR CELL REFERENCES PROBLEMS 14 Sensors 14.1 INTRODUCTION 14.2 THERMAL SENSORS 14.3 MECHANICAL SENSORS 14.4 MAGNETIC SENSORS 14.5 CHEMICAL SENSORS 14.6 BIOSENSORS REFERENCES PROBLEMS Appendices Appendix A List of Symbols Appendix BInternational System of Units Appendix CUnit Prefixes # Appendix DGreek Alphabet Appendix EPhysical Constants Appendix FProperties of Important Semiconductors Appendix GThe Bloch Theorem and the Periodic Energy in the Reciprocal Lattice Appendix H Properties of Si and GaAs Appendix IThe Derivations of Boltzmann Transport Equation and Hydrodynamic Model Appendix JProperties of SiO2 and Si3N4 P Appendix KCompact Models of Bipolar Transistors Appendix LDiscovery of the Floating-Gate Memory Effect REFERENCES Index End User License Agreement

The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices

The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters.

Divided into five parts, the text first provides a summary of semiconductor properties, covering energy band, carrier concentration, and transport properties. The second part surveys the basic building blocks of semiconductor devices, including p-n junctions, metal-semiconductor contacts, and metal-insulator-semiconductor (MIS) capacitors. Part III examines bipolar transistors, MOSFETs (MOS field-effect transistors), and other field-effect transistors such as JFETs (junction field-effect-transistors) and MESFETs (metal-semiconductor field-effect transistors). Part IV focuses on negative-resistance and power devices. The book concludes with coverage of photonic devices and sensors, including light-emitting diodes (LEDs), solar cells, and various photodetectors and semiconductor sensors. This classic volume, the standard textbook and reference in the field of semiconductor devices:

• Provides the practical foundation necessary for understanding the devices currently in use and evaluating the performance and limitations of future devices
• Offers completely updated and revised information that reflects advances in device concepts, performance, and application
• Features discussions of topics of contemporary interest, such as applications of photonic devices that convert optical energy to electric energy
• Includes numerous problem sets, real-world examples, tables, figures, and illustrations; several useful appendices; and a detailed solutions manual
• Explores new work on leading-edge technologies such as MODFETs, resonant-tunneling diodes, quantum-cascade lasers, single-electron transistors, real-space-transfer devices, and MOS-controlled thyristors

Physics of Semiconductor Devices, Fourth Edition is an indispensable resource for design engineers, research scientists, industrial and electronics engineering managers, and graduate students in the field.