Silicon-On-Insulator (SOI) Technology: Manufacture and Applications (Woodhead Publishing Series in Electronic and Optical Materials)

__Silicon-On-Insulator (SOI) Technology: Manufacture and Applications__ covers SOI transistors and circuits, manufacture, and reliability. The book also looks at applications such as memory, power devices, and photonics. The book is divided into two parts; part one covers SOI materials and manufacture, while part two covers SOI devices and applications. The book begins with chapters that introduce techniques for manufacturing SOI wafer technology, the electrical properties of advanced SOI materials, and modeling short-channel SOI semiconductor transistors. Both partially depleted and fully depleted SOI technologies are considered. Chapters 6 and 7 concern junctionless and fin-on-oxide field effect transistors. The challenges of variability and electrostatic discharge in CMOS devices are also addressed. Part two covers recent and established technologies. These include SOI transistors for radio frequency applications, SOI CMOS circuits for ultralow-power applications, and improving device performance by using 3D integration of SOI integrated circuits. Finally, chapters 13 and 14 consider SOI technology for photonic integrated circuits and for micro-electromechanical systems and nano-electromechanical sensors. The extensive coverage provided by __Silicon-On-Insulator (SOI) Technology__ makes the book a central resource for those working in the semiconductor industry, for circuit design engineers, and for academics. It is also important for electrical engineers in the automotive and consumer electronics sectors. * Covers SOI transistors and circuits, as well as manufacturing processes and reliability * Looks at applications such as memory, power devices, and photonics Content: Front matter, Pages i-iii Copyright, Page iv Contributor contact details, Pages xi-xiii Woodhead Publishing Series in Electronic and Optical Materials, Pages xv-xix Introduction, Pages xxi-xxii 1 - Materials and manufacturing techniques for silicon-on-insulator (SOI) wafer technology, Pages 3-51 2 - Characterization of the electrical properties of advanced silicon-on-insulator (SOI) materials and transistors, Pages 52-76 3 - Modeling the performance of short-channel fully depleted silicon-on-insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs), Pages 77-101 4 - Partially depleted (PD) silicon-on-insulator (SOI) technology: circuit solutions, Pages 102-123 5 - Planar fully depleted (FD) silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) technology, Pages 124-166 6 - Silicon-on-insulator (SOI) junctionless transistors, Pages 167-194 7 - Silicon-on-insulator (SOI) fin-on-oxide field effect transistors (FinFETs), Pages 195-202,203e-206e,203-211 8 - Understanding variability in complementary metal oxide semiconductor (CMOS) devices manufactured using silicon-on-insulator (SOI) technology, Pages 212-242 9 - Protecting against electrostatic discharge (ESD) in complementary metal oxide semiconductor (CMOS) integrated circuits (ICs) manufactured using silicon-on-insulator (SOI) technology, Pages 243-271 10 - Silicon-on-insulator (SOI) metal oxide semiconductor field effect transistors (MOSFETs) for radio frequency (RF) and analogue applications, Pages 275-317 11 - Silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) circuits for ultralow power (ULP) applications, Pages 318-357 12 - 3D integration of silicon-on-insulator (SOI) integrated circuits (ICs) for improved performance, Pages 358-394 13 - Silicon-on-insulator (SOI) technology for photonic integrated circuits (PICs), Pages 395-434 14 - Silicon-on-insulator (SOI) technology for micro-electromechanical systems (MEMS) and nano-electromechanical systems (NEMS) sensors, Pages 435-453 Index, Pages 455-474

Silicon-On-Insulator (SOI) Technology: Manufacture and Applications covers SOI transistors and circuits, manufacture, and reliability. The book also looks at applications such as memory, power devices, and photonics.

The book is divided into two parts; part one covers SOI materials and manufacture, while part two covers SOI devices and applications. The book begins with chapters that introduce techniques for manufacturing SOI wafer technology, the electrical properties of advanced SOI materials, and modeling short-channel SOI semiconductor transistors. Both partially depleted and fully depleted SOI technologies are considered. Chapters 6 and 7 concern junctionless and fin-on-oxide field effect transistors. The challenges of variability and electrostatic discharge in CMOS devices are also addressed. Part two covers recent and established technologies. These include SOI transistors for radio frequency applications, SOI CMOS circuits for ultralow-power applications, and improving device performance by using 3D integration of SOI integrated circuits. Finally, chapters 13 and 14 consider SOI technology for photonic integrated circuits and for micro-electromechanical systems and nano-electromechanical sensors.

The extensive coverage provided by Silicon-On-Insulator (SOI) Technology makes the book a central resource for those working in the semiconductor industry, for circuit design engineers, and for academics. It is also important for electrical engineers in the automotive and consumer electronics sectors.

• Covers SOI transistors and circuits, as well as manufacturing processes and reliability
• Looks at applications such as memory, power devices, and photonics

The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent light bulbs. Recent applications include plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage. This book is the first available to cover the applications of the IGBT, and provide the essential information needed by applications engineers to design new products using the device, in sectors including consumer, industrial, lighting, transportation, medical and renewable energy.

The author, B. Jayant Baliga, invented the IGBT in 1980 while working for GE. His book will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical engineers and design engineers, as well as an important publication for semiconductor specialists.

• Essential design information for applications engineers utilizing IGBTs in the consumer, industrial, lighting, transportation, medical and renewable energy sectors.
• Readers will learn the methodology for the design of IGBT chips including edge terminations, cell topologies, gate layouts, and integrated current sensors.
• The first book to cover applications of the IGBT, a device manufactured around the world by more than a dozen companies with sales exceeding $5 Billion; written by the inventor of the device.

Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps readers develop an understanding of a FDSOI device and its simulation model. It covers the physics and operation of the FDSOI device, explaining not only how FDSOI enables further scaling, but also how it offers unique possibilities in circuits. Following chapters cover the industry standard compact model BSIM-IMG for FDSOI devices. The book addresses core surface-potential calculations and the plethora of real devices and potential effects. Written by the original developers of the industrial standard model, this book is an excellent reference for the new BSIM-IMG compact model for emerging FDSOI technology.

The authors include chapters on step-by-step parameters extraction procedure for BSIM-IMG model and rigorous industry grade tests that the BSIM-IMG model has undergone. There is also a chapter on analog and RF circuit design in FDSOI technology using the BSIM-IMG model.

• Provides a detailed discussion of the BSIM-IMG model and the industry standard simulation model for FDSOI, all presented by the developers of the model
• Explains the complex operation of the FDSOI device and its use of two independent control inputs
• Addresses the parameter extraction challenges for those using this model

Silicon-on-insulator (SOI) is a semiconductor wafer technology that produces higher performing, lower power devices than traditional bulk silicon techniques. SOI works by placing a thin, insulating layer, such as silicon oxide between a thin layer of silicon and the silicon substrate. This process helps reduce junction capacitance, resulting in higher speed and lower power consumption. SOI chips can be as much as 15 percent faster and use 20 percent less power than today's silicon complementary metal-oxide semiconductor (CMOS)-based chips. Part one covers SOI transistors and circuits, manufact This book is the first to explain FinFET modeling for IC simulation and the industry standard BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture, as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, providing a step-by-step approach for the efficient extraction of model parameters. With this book you will Explains FinFET modeling for IC simulation and the industry standard for FinFET modeling - BSIM-CMG. This book gives a foundation on the physics and operation of FinFET, explaining the need to go from planar to 3D architecture. It then covers detailed aspects of the BSIMCMG model such as surface potential, charge and current calculations.