Silicon heterostructure handbook : materials, fabrication, devices, circuits, and applications of SiGe and Si strained-layer epitaxy
معرفی کتاب «Silicon heterostructure handbook : materials, fabrication, devices, circuits, and applications of SiGe and Si strained-layer epitaxy» نوشتهٔ Paul Kempf، John Ioannis Papapolymerou، J. Osten، G. Niu، Gianlorenzo Masini، R. Malladi، John R. Long، Kyutae Lim، Qingqing Liang، Ronglin Li، Rajendran Krishnasamy، Dieter Knoll، Stephane Pinel، Erich Kasper، Jeffrey B. Johnson، Judy L. Hoyt، David Harame، Robert Groves، Ulf Gennser، C. Fellous، Anders Elfving، Peter Deixler، F. Deleglise، Sudipto Chakraborty، M. Marty، P. Chevalier، M. Laurens، Peter Zaumseil، H. Yasuda، Katsuyoshi Washio، K. Wang، G. Troillard، B. Szelag، P. Steinmann، J. Mourier، A. Monroy، J. N. Burghartz، B. Martinet، H. Baudry، Mark P. van der Heijden، Youri V. Tretiakov، S. Tong، Scott E. Thompson، M. Tentzeris، A. Talbot، S. Strang، L. Rubaldo، Stephane Monfray، C.K Maiti، Lawrence E. Larson، Didier Dutartre، B. El-Kareh، Leo N. C. de Vreede، Lorenzo Colace، Alain Chantre، J. Cai، Soichiro Tsujino، Douglas J. Paul، Greg Freeman، T. Meister، Raminderpal Singh، H. J. Kim، John D. Cressler، J. Bock، Joy Laskar، Hermann Schumacher، Daniel Friedman، Roy A. Colclaser، Jae-Sung Rieh، A. Fischer، Slobodan Mijalković، David R. Greenberg، Didier Belot، Sanjay Banerjee، S. Balster، Gaetano Assanto، Thomas N. Adam، Detlev Grutzmacher، Mounir Meghelli، Eugene Fitzgerald، James S. Dunn، Alvin Joseph، Michael Schroter، Robert Hull، BERNARD MEYERSON، Ken Rim، Johann-Friedrih Luy، Stephan Borel، Thomas Skotnicki، Bernd Tillack، David Sheridan، A. Peaker، Michael Oehme و W. Ni، منتشرشده توسط نشر Dekker/CRC Press در سال 2005. این کتاب در 20 صفحه، فرمت pdf، زبان انگلیسی ارائه شده است.
An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source. Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology. Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation. A.3.2 Derivation of a General Relationship......Page 2 A.3.3 Homojunction Transistors......Page 6 References......Page 10 A.3.5 Further Extensions......Page 12 9.14.9 RF and Analog Blocks Validation......Page 14 Appendix A.3: Integral Charge-Control Relations......Page 0 Appendix A.4: Sample SiGe HBT Compact Model Parameters......Page 1 References......Page 4 References......Page 5 9.14.2 Process Definition......Page 3 9.14.4 Down Mixers and PMA Implementation......Page 8 Other ICs......Page 7 A.3.4 Heterojunction Transistors......Page 9 Half-Rate and Full-Rate Transmitter Designs......Page 11 References......Page 13 Reconfigurable Matching Networks (Tuners)......Page 16 References......Page 19 9.8.9 Fabricated Hardware and Results......Page 21 References......Page 22 References......Page 24 Harmonic Matching Techniques......Page 28 Inductors......Page 30 Low-Frequency IM3-Cancellation......Page 32 Varactors......Page 34 Integrated Circuit Oscillators......Page 36 VCO Comparison and Summary......Page 37 9.14.10 RF and Analog Receiver Validation......Page 17 LNA Comparison and Summary......Page 20 Downconversion Mixers......Page 15 9.14.11 WCDMA Receiver Global Test......Page 18 9.8.10 Compensation and Corrections......Page 23 Mixer Comparison and Summary......Page 26 Third-order Distortion Cancellation......Page 29 High-Frequency IM3-Cancellation......Page 33 References......Page 40 9.7.5 Voltage-Controlled Oscillators......Page 27 References......Page 39 Appropriate for practicing engineers and graduate students, this dense collection details the many advances in using silicon germanium (SiGe) and silicon strained-layer epitaxy to practice bandgap engineering of semiconductor devices. The 75 contributions are divided into eight sections on epitaxial growth techniques, SiGe heterojunction bipolar transistor (HBT) operation, BiCMOS technology, heterostructure field-effect transistors, optoelectronic components, measurement and modeling, and circuits. Topics include ultrahigh vacuum chemical vapor deposition, carbon doping, mixed- signal noise, resonant tunneling devices, quantum cascade emitters, the Mextram compact model, and linearization techniques. Annotation :2006 Book News, Inc., Portland, OR (booknews.com) Edited By John D. Cressler. Includes Bibliographical References And Index.