Silicon-Germanium Strained Layers and Heterostructures: Semi-conductor and semi-metals series (Volume 74) (Semiconductors and Semimetals, Volume 74)

معرفی کتاب «Silicon-Germanium Strained Layers and Heterostructures: Semi-conductor and semi-metals series (Volume 74) (Semiconductors and Semimetals, Volume 74)» نوشتهٔ Gerhard P Willeke، Gérard Ghibaudo، Constantinos Christofides، Paul W Kruse، David D Skatrud، David J Lockwood، Theodore D Moustakas، Michael Stavola، Yoon Soo Park، Tadeusz Suski، Elsa Garmire، Alan Kost، Mitsuru Sugawara، Ralph B James، Norbert H Nickel، W. T Tsang، R. F Wood، C. W White، R. T Young، T. C. L. Gerhard Sollner، T. E Schlesinger، R. L Gunshor، A. V Nurmikko، G. B Stringfellow، M. George Craford، Robert B Marcus، John C Bean، Mark Reed، Mark S Lundstrom، William Paul، Robert K Willardson، Albert C Beer، Eicke R Weber، Jacques I Pankove، Raymond Dingle، Jacek K Furdyna، Jacek Kossut، Esther Conwell، Robert Hull، Toshiaki Ikoma، Thomas P Pearsall، Noble M Johnson، David G Seiler، Christopher L Littler، Katherine T Faber، Kevin J Malloy، Richard K Ahrenkiel، Arthur C Gossard، Richard A Kiehl و Fumio Shimura، منتشرشده توسط نشر Elsevier در سال 2003. این کتاب در فرمت pdf، زبان انگلیسی ارائه شده است.

نویسنده: Gerhard P Willeke، Gérard Ghibaudo، Constantinos Christofides، Paul W Kruse، David D Skatrud، David J Lockwood، Theodore D Moustakas، Michael Stavola، Yoon Soo Park، Tadeusz Suski، Elsa Garmire، Alan Kost، Mitsuru Sugawara، Ralph B James، Norbert H Nickel، W. T Tsang، R. F Wood، C. W White، R. T Young، T. C. L. Gerhard Sollner، T. E Schlesinger، R. L Gunshor، A. V Nurmikko، G. B Stringfellow، M. George Craford، Robert B Marcus، John C Bean، Mark Reed، Mark S Lundstrom، William Paul، Robert K Willardson، Albert C Beer، Eicke R Weber، Jacques I Pankove، Raymond Dingle، Jacek K Furdyna، Jacek Kossut، Esther Conwell، Robert Hull، Toshiaki Ikoma، Thomas P Pearsall، Noble M Johnson، David G Seiler، Christopher L Littler، Katherine T Faber، Kevin J Malloy، Richard K Ahrenkiel، Arthur C Gossard، Richard A Kiehl، Fumio Shimura
ناشر: Elsevier
سال انتشار: 2003
فرمت: pdf
زبان: en
شابک: 9780080541020
دسته: بدون دسته‌بندی

The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling. * Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review* The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject* Appropriate for students and senior researchers The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices.

Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling.

* Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review
* The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject
* Appropriate for students and senior researchers Content: Preface to the first edition Pages xi-xii S.C. Jain Preface to the second edition Pages xiii-xiv S.C. Jain, M. Willander Chapter 1 Introduction Pages 1-7 Chapter 2 Strain, stability, reliability and growth Original Research Article Pages 9-40 Chapter 3 Mechanism of strain relaxation Original Research Article Pages 41-60 Chapter 4 Strain, growth, and TED in SiGeC layers Original Research Article Pages 61-90 Chapter 5 Bandstructure and related properties Original Research Article Pages 91-145 Chapter 6 Heterostructure bipolar transistors Original Research Article Pages 147-194 Chapter 7 FETs and other devices Original Research Article Pages 195-241 Bibliography Pages 243-280 Index Pages 281-285 Contents of volumes Pages 287-308 Front Cover; Silicon-Germanium Strained Layers and Heterostructures: Semiconductors and Semimetals; Copyright Page; Contents; Preface to the first edition; Preface to the second edition; Chapter 1. Introduction; Chapter 2. Strain, stability, reliability and growth; Chapter 3. Mechanism of strain relaxation; Chapter 4. Strain, growth, and TED in SiGeC layers; Chapter 5. Bandstructure and related properties; Chapter 6. Heterostructure Bipolar Transistors; Chapter 7. FETs and other devices; Bibliography; Index; Contents of Volumes.Electronic reproduction.Available via World Wide Web. A comprehensive overview of recent research on Silicon-Germanium structures, informing the development of semi-conductors Extensive work was done on Si1-x Gex strained layers and devices during 1980s and early 1990s [1].

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