Semiconductors: Part I (The IMA Volumes in Mathematics and its Applications (58))

Semiconductor and integrated-circuit modeling are an important part of the high-technology "chip" industry, whose high-performance, low-cost microprocessors and high-density memory designs form the basis for supercomputers, engineering workstations, laptop computers, and other modern information appliances. There are a variety of differential equation problems that must be solved to facilitate such modeling. This two-volume set covers three topic areas: process modeling and circuit simulation in **Volume I** and device modeling in **Volume II**. Process modeling provides the geometry and impurity doping characteristics that are prerequisites for device modeling; device modeling, in turn, provides static current and transient charge characteristics needed to specify the so-called compact models employed by circuit simulators. The goal of these books is to bring together scientists and mathematicians to discuss open problems, algorithms to solve such, and to form bridges between the diverse disciplines involved. Front Matter....Pages I-XXVI IC Technology CAD Overview....Pages 1-15 The Boltzmann-Poisson System in Weakly Collisional Sheaths....Pages 17-31 An Interface Method for Semiconductor Process Simulation....Pages 33-47 Asymptotic Analysis of a Model for the Diffusion of Dopant-Defect Pairs....Pages 49-66 A Reaction-Diffusion System Modeling Phosphorus Diffusion....Pages 67-77 Atomic Diffusion in GaAs with Controlled Deviation from Stoichiometry....Pages 79-105 Theory of a Stochastic Algorithm for Capacitance Extraction in Integrated Circuits....Pages 107-114 Moment-Matching Approximations for Linear(Ized) Circuit Analysis....Pages 115-130 Spectral Algorithm for Simulation of Integrated Circuits....Pages 131-140 Convergence of Waveform Relaxation for RC Circuits....Pages 141-146 Switched Networks....Pages 147-154 Part of a two-volume set exploring semiconductors and integrated-circuit modelling, this study describes process modelling (geometry and impurity doping characteristics) and device modelling (characteristics needed to specify the compact models employed by circuit simulators). Angezeigt in S-N 04/94, unter ISBN 3-540-94250-5