Semiconductors and semimetals. Vol. 73 Processing and properties of compound semiconductors R. Willardson, H.S. Nalwa

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon , and others promise that this tradition will be maintained and even expanded. Content: List of contributors Page ix Chapter 1 Introduction Pages 1-13 S.J. Pearton Chapter 2 Gallium arsenide heterostructures Original Research Article Pages 15-62 Eric Donkor Chapter 3 Growth and optical properties of GaN Original Research Article Pages 63-150 Annamraju Kasi Viswanath Chapter 4 SiGe/Si processing Original Research Article Pages 151-197 D.Y.C. Lie, K.L. Wang Chapter 5 Advances in quantum dot structures Original Research Article Pages 199-213 S. Kim, M. Razeghi Chapter 6 Wet etching of III–V semiconductors Original Research Article Pages 215-295 Walter P. Gomes Index Pages 297-299 Contents of volumes in this series Pages 301-321 Compound semiconductors have a wide variety of applications, including visible and infrared laser diodes and light-emitting diodes (e.g., InGaAsP/InP, GaAs/AlGaAs, InGaAlP, InGaN/AlGaN) for displays, information storage and communications, metal-semiconductor field effect transistors, heterojunction bipolar transistors, and high electron mobility transistors for high speed data transmission networks, microwave amplifiers, low-noise amplifiers, and wireless communication; see, or example, [1].