Semiconductors And Semimetals: Indium Phosphide Crystal Growth And Characterization, Vol. 31 (semiconductors & Semimetals)

Summarizes advances made in direct synthesis, large crystal growth with low dislocation densities, and epitaxial layer growth. The book provides descriptions of substrate preparation and evaluation, and treats methods for the reduction of dislocations and the measurement of stochiometric defects. Content: Edited By Page iii Copyright Page Page iv List of Contributors Pages ix-x Preface Pages xi-xii R.K. Willardson, Albert C. Beer Chapter 1 Growth of Dislocation-free InP Original Research Article Pages 1-35 J.P. Farges Chapter 2 High Purity InP Grown by Hydride Vapor Phase Epitaxy Original Research Article Pages 37-69 M.J. Mccollum, G.E. Stillman Chapter 3 Direct Synthesis and Growth of Indium Phosphide by the Liquid Phosphorus Encapsulated Czochralski Method Original Research Article Pages 71-92 Tomoki Inada, Tsuguo Fukuda Chapter 4 InP Crystal Growth, Substrate Preparation and Evaluation Original Research Article Pages 93-174 O. Oda, K. Katagiri, K. Shinohara, S. Katsura, Y. Takahashi, K. Kainosho, K. Kohiro, R. Hirano Chapter 5 InP Substrates: Production and Quality Control Original Research Article Pages 175-241 Koji Tada, Masami Tatsumi, Mikio Morioka, Takashi Araki, Tomohiro Kawase Chapter 6 LP-MOCVD Growth, Characterization, and Application of InP Material Original Research Article Pages 243-355 Manijeh Razeghi Chapter 7 Stoichiometric Defects in InP Original Research Article Pages 357-389 T.A. Kennedy, P.J. Lin-Chung Index Pages 391-394 Annotation Scientists from France, Japan, and the US summarize the advances in direct synthesis, in large crystal growth with low dislocation densities, and in epitaxial layer growth. They provide a description of substrate preparation and evaluation, and methods for the reduction of dislocations and measurement of stoichiometric defects. Topics include the state of the art in liquid encapsulated Czochralski (LEC), growth of dislocation-free InP, epitaxial InP grown by the hydride vapor phase process, commercial production of InP single crystals and substrates, and the use of low pressure MOCVD to prepare epitaxial layers of InP, GaInAs and GaInP heterostructures on InP substrates. Annotation(c) 2003 Book News, Inc., Portland, OR (booknews.com) This volume details the range of applications of gallium nitride (GaN) and its use as a semiconductor material. It explores the combination of properties offered by GaN, such as direct bandgap, its large range of energy bandgaps in the alloy system and its mechanical stability.