Semiconductor Surface Physics

Proceedings of the Conference on the Physics of Semiconductor Surfaces, June 1956. Foreword Introduction Contents I Clean Surfaces Low-Energy Electron Diffraction Studies Of Cleaned And Gas-Covered Germanium (100) Surfaces Electrical Properties of a Clean Germanium Surface II Real Surfaces Mobility in Inversion Layers: Theory and Experiment Field Effect on Surface Conductance and Surface Recombination Surface Recombination Processes in Germanium and their Investigation by Means of Transverse Electric Fields Short Contribution: Storage of Injected Carriers at Surfaces of Germanium Field Effect and Photo Effect Experiments on Germanium Surfaces 1. Equilibrium Conditions within the Semiconductor 2. Non-Equilibrium Conditions Within The Semiconductor Measurements of Inversion Layers on Silicon and Germanium and their Interpretation Slow Relaxation Phenomena on the Germanium Surface Effects of Thick Oxides on Germanium Surface Properties Surface Studies on Photoconductive Lead Sulfide Films Surface Studies on Cleaved Crystals of Lead Sulfide III Adsorption and Catalysis Introductory Remarks: Bridges of Physics and Chemistry across the Semiconductor Surface Gas Reactions on Semiconducting Surfaces and Space Charge Boundary Layers Experiments Connecting Semiconductor Properties and Catalysis Long Time Work Function Changes Induced by Light and Electrostatic Fields IV Oxidation The Oxidation of Metals The Interaction of Oxygen with Clean Germanium Surfaces 1. Experiment 2. Theoretical Discussion The High Temperature Oxidation of Germanium Short Contribution: Vacuum Microbalance Studies on Single Crystal Germanium Subject Index Author Index