Selected topics in group IV and II- VI semiconductors : proceedings of Symposium L: 6th International symposium on Silicon Molecular Beam Epitaxy and Symposium D on Purification, Doping and Defects in II - VI Materials of the 1995 E-MRS Spring Conference,

Content: EUROPEAN MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS , Page ii Front Matter , Page iii Copyright , Page iv SIXTH INTERNATIONAL SYMPOSIUM ON SILICON MOLECULAR BEAM EPITAXY: Strasbourg, France, May 22–26, 1995 , Page vii Sponsors , Page viii Preface , Page ix , E. Kasper, E.H.C. Parker Front Matter , Page iii SYMPOSIUM D ON PURIFICATION, DOPING AND DEFECTS IN II–VI MATERIALS: Strasbourg, France, May 22–24, 1995 , Page v Sponsors , Page vi Quantitative analysis of light emission from SiGe quantum wells , Pages 1-10 , S. Fukatsu, H. Akiyama, Y. Shiraki, H. Sakaki Optimisation and stability of optical spectra of novel Si–Ge quantum well structures in an external electric field , Pages 11-14 , M. Jaros, G. Elfardag, J.P. Hagon, R.J. Turton, K.B. Wong Room-temperature luminescence from Si/Ge single quantum well diodes grown by molecular beam epitaxy , Pages 15-20 , H. Presting, T. Zinke, O. Brux, M. Gail, G. Abstreiter, H. Kibbel, M. Jaros The growth and characterization of Si 1− x Ge x multiple quantum wells on Si(110) and Si(111) , Pages 21-26 , P.E. Thompson, T.L. Kreifels, M. Gregg, R.L. Hengehold, Y.K. Yeo, D.S. Simons, M.E. Twigg, M. Fatemi, K. Hobart Intense photoluminescence from Si-based quantum well structures with neighboring confinement structure , Pages 27-30 , N. Usami, Y. Shiraki, S. Fukatsu Influence of surfactants on molecular beam epitaxial grown SiGe single quantum wells studied by photoluminescence and secondary ion mass spectroscopy investigations , Pages 31-35 , H.P. Zeindl, S. Nilsson, J. Klatt, D. Krüger, R. Kurps Anomalous spectral shift of photoluminescence from MBE-grown strained Si 1− x Ge x /Si quantum wells mediated by atomic hydrogen , Pages 36-39 , G. Ohta, S. Fukatsu, N. Usami, Y. Shiraki, T. Hattori Field-driven blue shift of excitonic photoluminescence in Si–Ge quantum wells and superlattices , Pages 40-44 , J.Y. Kim, S. Fukatsu, N. Usami, Y. Shiraki Theory of electronic and optical properties of Si/Ge superlattices , Pages 45-51 , G. Theodorou, C. Tserbak Interface morphology and relaxation in high temperature grown Si 1− x Ge x /Si superlattices , Pages 52-56 , J.-M. Baribeau Photoluminescence study of SiGe quantum well broadening by rapid thermal annealing , Pages 57-60 , H. Lafontaine, D.C. Houghton, N. Rowell, G.C. Aers, R. Rinfret X-ray reciprocal space mapping of Si/Si 1− x Ge x heterostructures , Pages 61-67 , Günther Bauer, Jianhua Li, Ewald Koppensteiner Test of Vegard's law in thin epitaxial SiGe layers , Pages 68-72 , E. Kasper, A. Schuh, G. Bauer, B. Holländer, H. Kibbel Spectroscopic ellipsometry for Si (1 − x ) Ge x characterization: comparison with other experimental techniques , Pages 73-79 , Pierre Boher, Jean Philippe Piel, Jean Louis Stehle Characterization of highly boron-doped Si, Si 1− x Ge x and Ge layers by high-resolution transmission electron microscopy , Pages 80-84 , H.H. Radamson, K.B. Joelsson, W.-X. Ni, L. Hultman, G.V. Hansson Magnetotransport of epitaxial Si/Ge layers on Si , Pages 85-89 , W. Koschinski, K. Dettmer, F.R. Kessler Measurement of the generation lifetime in SiGe epitaxial layers using a modified Zerbst technique , Pages 90-95 , S. Hall, I.S. Goh, Z.Y. Wu Thickness measurements of Si 1− x Ge x thin layers deposited on Si mesa structures , Pages 96-99 , A. Wasserman, R. Beserman, K. Dettmer Device quality of in situ plasma cleaning for silicon molecular beam epitaxy , Pages 100-104 , W. Hansch, Eisele, H. Kibbel, U. König, J. Ramm Electrical characteristics of Si/ × B/Si(111) structures by gas-source MBE , Pages 105-108 , Hiroshi Uji, Satoshi Tatsukawa, Satoru Matsumoto, Hirofumi Higuchi Electrochemical capacitance–voltage depth profiling of heavily boron-doped silicon , Pages 109-112 , E. Basaran, C.P. Parry, R.A. Kubiak, T.E. Whall, E.H.C. Parker The role of strain in silicon-based molecular beam epitaxy , Pages 113-115 , Ya-Hong Xie, Paul J. Silverman Photoluminescence characterization of Si 1− x Ge x relaxed “pseudo-substrates” grown on Si , Pages 116-120 , G. Bremond, A. Souifi, O. De Barros, A. Benmansour, P. Warren, D. Dutartre Relaxed Si 1− x Ge x films with reduced dislocation densities grown by molecular beam epitaxy , Pages 121-125 , Martin O. Tanner, Michael A. Chu, Kang L. Wang, Marjohn Meshkinpour, Mark S. Goorsky Relaxation of compositionally graded Si 1− x Ge x buffers: a TEM study , Pages 126-131 , M. Hohnisch, H.-J. Herzog, F. Schäffler Dislocation patterning and nanostructure engineering in compositionally graded Si 1− x Ge x /Si layer systems , Pages 132-136 , S. Yu. Shiryaev, F. Jensen, J. Wulff Petersen, J. Lundsgaard Hansen, A. Nylandsted Larsen Strain relaxation and misfit dislocations in compositionally graded Si 1− x Ge x layers on Si(001) , Pages 137-141 , J.H. Li, V. Holy, G. Bauer, M. Hohnisch, H.-J. Herzog, F. Schäffler Comparison of different Si/Ge alloy buffer concepts for (Si m Ge n ) p superlattices , Pages 142-146 , K. Dettmer, U. Behner, R. Beserman Ge + ion implantation – a competing technology? , Pages 147-160 , P.L.F. Hemment, F. Cristiano, A. Nejim, S. Lombardo, K.K. Larssen, F. Priolo, R.C. Barklie Si(100) epitaxy by low-temperature UHV-CVD: AFM study of the initial stages of growth , Pages 161-167 , F. Chollet, E. André, W. Vandervorst, M. Caymax In situ RHEED and AFM investigation of growth front morphology evolution of Si(001) grown by UHV-CVD , Pages 168-171 , S. Nayak, D.E. Savage, H.-N. Chu, M.G. Lagally, T.F. Kuech Magnetron sputter epitaxy of Si/Ge heterostructures , Pages 172-176 , P. Sutter, E. Müller, S. Tao, C. Schwarz, M. Filzmoser, M. Lenz, H. von Känel Crystallization of a-Si 1− x Ge x : decomposition and modulated structure formation features , Pages 177-180 , F. Edelman, Y. Komem, P. Werner, J. Heydenreich, R. Butz, S.S. Iyer Strain compensation in ternary Si 1 − x − y Ge x B y films , Pages 181-184 , B. Tillack, P. Zaumseil, G. Morgenstern, D. Krüger, B. Dietrich, G. Ritter Modeling of facet growth on patterned Si substrate in gas source MBE , Pages 185-189 , Shaozhong Li, Qi Xiang, Dawen Wang, Kang L. Wang Effect of RTCVD growth conditions on the crystal quality of pseudomorphic Si 1− x − y Ge x C y films , Pages 190-194 , Jian Mi, Patricia Warren, Pascal Letourneau, Moshe Judelewicz, Marc Gailhanou, Michel Dutoit Tunable infrared photoemission sensor on silicon using SiGe/Si epitaxial heterostructures , Pages 195-200 , C. Renard, S. Bodnar, P.A. Badoz, I. Sagnes Plasma-enhanced evaporation of SiO 2 films for MBE-grown MOS devices , Pages 201-206 , Alexandra Neubecker, Peter Bieringer, Walter Hansch, Ignaz Eisele High speed SiGe heterobipolar transistors , Pages 207-214 , Andreas Schüppen, Harry Dietrich Si/Si 1− x Ge x heterojunction bipolar transistors for microwave power applications , Pages 215-221 , K.D. Hobart, F.J. Kub, N.A. Papanicoloau, W. Kruppa, P.E. Thompson Assessment of intervalley f-scattering time constants in Si/SiGe heterostructures , Pages 222-226 , F. Beisswanger, H. Jorke, H. Kibbel, H.-J. Herzog, A. Schüppen, R. Sauer Photo-induced intersubband absorption in Si/SiGe quantum wells , Pages 227-230 , P. Boucaud, L. Gao, F. Visocekas, Z. Moussa, J.-M. Lourtioz, F.H. Julien, I. Sagnes, Y. Campidelli, P.-A. Badoz, P. Vagos Influence of base dopant out-diffusion into the emitter in Si/SiGe heterojunction bipolar transistor using Monte Carlo simulations , Pages 231-235 , Sylvie Galdin, Philippe Dollfus, Mireille Mouis, Françoise Meyer, Patrice Hesto Interface reaction between Ir films and relaxed SiGe MBE layers by rapid thermal annealing , Pages 236-241 , G. Curello, R. Gwilliam, M. Harry, K.J. Reeson, B.J. Sealy, T. Rodriguez, A. Almendra Some critical issues on growth of high quality Si and SiGe films using a solid-source molecular beam epitaxy system , Pages 242-247 , W.-X. Ni, W.M. Chen, LA. Buyanova, A. Henry, G.V. Hansson, B. Monemar Silicon nanostructure devices , Pages 248-254 , I. Eisele, H. Baumgärtner, W. Hansch Islands formation conditions in silicon–germanium alloys grown by MBE , Pages 255-259 , R. Murri, N. Pinto, L. Trojani, L. Lucchetti, G. Majni, P. Mengucci Self-organized MBE growth of Ge-rich SiGe dots on Si(100) , Pages 260-264 , P. Schittenhelm, M. Gail, G. Abstreiter Photoluminescence investigation on growth mode changeover of Ge on Si(100) , Pages 265-269 , H. Sunamura, S. Fukatsu, N. Usami, Y. Shiraki Local epitaxy of Si/SiGe wires and dots , Pages 270-275 , J. Brunner, W. Jung, P. Schittenhelm, M. Gail, G. Abstreiter, J. Gonderman, B. Hadam, T. Koester, B. Spangenberg, H.G. Roskos, H. Kurz, H. Gossner, I. Eisele Silicon molecular beam epitaxial growth on ultra-small mesa structures , Pages 276-279 , V.S. Avrutin, N.F. Izumskaya, A.F. Vyatkin, V.A. Yunkin Photoluminescence and Raman spectroscopy of Si/Si 1− x Ge x quantum dots , Pages 280-284 , Y.S. Tang, C.M. Sotomayor Torres, B. Dietrich, W. Kissinger, T.E. Whall, E.H.C. Parker A silicon molecular beam epitaxy system dedicated to device-oriented material research , Pages 285-294 , W.-X. Ni, J.O. Ekberg, K.B. Joelsson, H.H. Radamson, A. Henry, G.-D. Shen, G.V. Hansson Adsorption and desorption of atomic hydrogen on Si(001) and its effects on Si MBE , Pages 295-299 , Kunihiro Sakamoto, Hirofumi Matsuhata, Kazushi Miki, Tsunenori Sakamoto Investigation of Si-substrate preparation for GaAs-on-Si MBE growth , Pages 300-303 , M. Kayambaki, R. Callec, G. Constantinidis, Ch. Papavassiliou, E. Löchtermann, H. Krasny, N. Papadakis, P. Panayotatos, A. Georgakilas Phosphorus doping in molecular beam epitaxial grown silicon and silicon/germanium using a GaP decomposition source , Pages 304-307 , G. Lippert, H.J. Osten, D. Krüger Influence of self-assembling growth on the shape and the orientation of silicon nanostructures , Pages 308-311 , H. Gossner, T. Rupp, I. Eisele Roughening of SiGe layers grown with gas-source MBE: dependence on Ge concentration and growth temperature , Pages 312-316 , A.B. Storm, P.W. Lukey, K. Werner, J. Caro, S. Radelaar Improvement of the morphological quality of the Si surface using an optimised in-situ oxide removal procedure prior to MBE growth , Pages 317-322 , J. Lundsgaard Hansen, S. Yu. Shiryaev, E.V. Thomsen Segregation of interface carbon during silicon epitaxial growth by UHV-CVD , Pages 323-326 , Tohru Aoyama, Tatsuya Suzuki, Kenichi Arai, Toru Tatsumi In situ real-time temperature and thickness measurement for Si/SiGe growth on MBE and RTCVD systems , Pages 327-332 , H. Möller, F.G. Böbel, B. Hertel, T. Lindenberg, G. Ritter Incorporation kinetics of rare earth impurities in Si during molecular beam epitaxy , Pages 333-337 , K. Miyashita, D.C. Houghton, Y. Shiraki, S. Fukatsu Growth of low-dimensional structures on nonplanar patterned substrates , Pages 338-343 , Karl D. Hobart, Fritz J. Kub, Henry F. Gray, Mark E. Twigg, Dowwon Park, Phillip E. Thompson Formation of buried a-Si/Al/Si, a-Si/Sb/Si and a-Si/B/Si interfaces and their electrical properties , Pages 344-348 , A.V. Zotov, F. Wittmann, J. Lechner, S.V. Ryzhkov, V.G. Lifshits, I. Eisele Arsenic doping in Si-MBE using low energy ion implantation (LEII) , Pages 349-352 , E.J.H. Collart, D.J. Gravesteijn, E.G.C. Lathouwers, W.J. Kersten Two-dimensional hole gas in SiGe heterostructures: electrical properties and field effect applications , Pages 353-361 , T.E. Whall Radiative recombination processes in p-type modulation-doped SiGe quantum wells and Si epilayers , Pages 362-366 , I.A. Buyanova, W.M. Chen, A. Henry, W.-X. Ni, G.V. Hansson, B. Monemar Electron mobility enhancement in a strained Si channel , Pages 367-372 , L. Garchery, I. Sagnes, P. Warren, J.-C. Dupuy, P.A. Badoz Electron heating effect on transport properties in Si/SiGe modulation doped structures grown by gas source molecular beam epitaxy , Pages 373-377 , A. Matsumura, T.J. Thornton, J.M. Fernández, S.N. Holmes, J. Zhang, B.A. Joyce Hole confinement in boron δ-doped Si quantum wells studied by admittance spectroscopy , Pages 378-381 , Jian-hong Zhu, Da-wei Gong, Bo Zhang, Fang Lu, Chi Sheng, Heng-hui Sun, Xun Wang Observation of piezoelectric-like behaviour in coherently strained B-doped (100) SiGe/Si heterostructures , Pages 382-385 , O.A. Mironov, V.I. Khizhny, G. Braithwaite, E.H.C. Parker, P.J. Phillips, T.E. Whall, V.P. Gnezdilov Optical and electronic properties of SiGeC alloys grown on Si substrates , Pages 386-391 , J. Kolodzey, P.R. Berger, B.A. Orner, D. Hits, F. Chen, A. Khan, X. Shao, M.M. Waite, S. Ismat Shah, C.P. Swann, K.M. Unruh Early stages of growth of β-SiC on Si by MBE , Pages 392-399 , K. Zekentes, V. Papaioannou, B. Pecz, J. Stoemenos MBE growth of ternary SnGeSiGe superlattices , Pages 400-404 , W. Dondl, E. Silveira, G. Abstreiter Strain-stabilized structures on silicon grown with MBE , Pages 405-409 , H.J. Osten, H. Rücker, M. Methfessel, E. Bugiel, S. Ruvimov, G. Lippert Optical properties of bulk and multi-quantum well SiGe: C heterostructures , Pages 410-413 , P. Boucaud, C. Guedj, D. Bouchier, F.H. Julien, J.-M. Lourtioz, S. Bodnar, J.L. Regolini, E. Finkman Thermal stability of Si/Si 1− x − y Ge x C y /Si heterostructures grown by rapid thermal chemical vapor deposition , Pages 414-419 , Patricia Warren, Jian Mi, Frédéric Overney, Michel Dutoit A particular epitaxial Si 1 − y C y alloy growth mode on Si(001) evidenced by cross-sectional transmission electron microscopy , Pages 420-425 , A. Claverie, J. Fauré, J.L. Balladore, L. Simon, A. Mesli, M. Diani, L. Kubler, D. Aubel Molecular beam epitaxial grown Si 1− x C x layers on Si(001) as a substrate for MWCVD of diamond , Pages 426-430 , T. Gutheit, M. Heinau, H.-J. Füsser, C. Wild, P. Koidl, G. Abstreiter Synthesis of epitaxial Si 1 − y C y alloys on Si(001) with high level of non-usual substitutional carbon incorporation , Pages 431-435 , M. Diani, L. Kubler, J.L. Bischoff, J.J. Grob, B. Prévot, A. Mesli Realization of Si 1− x − y Ge x C y /Si heterostructures by pulsed laser induced epitaxy of C + implanted pseudomorphic SiGe films and of a-SiGeC:H films deposited on Si(100) , Pages 436-441 , J. Boulmer, P. Boucaud, C. Guedj, D. Débarre, D. Bouchier, E. Finkman, S. Prawer, K. Nugent, A. Desmur-Larré, C. Godet, P. Roca i Cabarrocas P–T–X phase equilibrium and vapor pressure scanning of non-stoichiometry in CdTe , Pages 1-4,6-11 , J.H. Greenberg Growth and homogeneity region of CdTe , Pages 12-15 , Yu.M. Ivanov Effect of CdTe “postmelting” , Pages 16-19 , L. Shcherbak, P. Feichouk, O. Panchouk Growth and characterization of 100 mm diameter CdZnTe single crystals by the vertical gradient freezing method , Pages 20-27 , T. Asahi, O. Oda, Y. Taniguchi, A. Koyama Attempts to growth of undoped CdTe single crystals with high electrical resistivity , Pages 28-33 , P. Rudolph, S. Kawasaki, S. Yamashita, S. Yamamoto, Y. Usuki, Y. Konagaya, S. Matada, T. Fukuda Stress birefringence in vapour-grown CdTe and its correlation to the growth techniques , Pages 34-39 , M. Laasch, G. Kloess, Th. Kunz, R. Schwarz, K. Grasza, C. Eiche, K.W. Benz Comparison of Bridgman and THM method regarding the effect of In doping and distribution of Zn in CdTe , Pages 40-44 , E. Weigel, G. Müller-Vogt Growth and characterization of twin-free ZnSe single crystals by the vertical Bridgman method , Pages 45-50 , T. Fukuda, K. Umetsu, P. Rudolph, H.J. Koh, S. Iida, H. Uchiki, N. Tsuboi Vapour growth and characterization of bulk ZnSe single crystals , Pages 51-59 , Yu.V. Korostelin, V.I. Kozlovsky, A.S. Nasibov, P.V. Shapkin Seeded melt growth of ZnSe crystals under Zn partial pressure , Pages 60-63 , Isao Kikuma, Tetsuya Shiohara Incorporation of dopants and native defects in bulk Hg 1− x Cd x Te crystals and epitaxial layers , Pages 64-72 , H.R. Vydyanath Fundamental studies of p-type doping of CdTe , Pages 73-81 , H.L. Hwang, Klaus Y.J. Hsu, H.Y. Ueng Transmutation doping of wide-bandgap II–VI compounds , Pages 82-85 , M. Wienecke, J. Bollmann, J. Röhrich, K. Maass, B. Reinhold, D. Forkel-Wirth Generation of atomic group V materials for the p-type doping of wide gap II–VI semiconductors using a novel plasma cracker , Pages 86-89 , H.-J. Lugauer, A. Waag, L. Worschech, W. Ossau, G. Landwehr Evidence for thermodynamically stable p/n junction, formed by Ag doping of (Hg,Cd) Te , Pages 90-93 , Igor Lyubomirsky, Vera Lyakhovitskaya, Jean François Guillemoles, Ilan Riess, Robert Triboulet, David Cahen Purification methods of Cd, Te and CdTe and periodicity of segregation coefficients of admixtures , Pages 94-103 , L. Kuchař, J. Drápala, J. Luňáček Matrix and impurity element distributions in CdHgTe (CMT) and (Cd,Zn)(Te,Se) compounds by chemical analysis , Pages 104-118 , P. Capper, E.S. O'Keefe, C. Maxey, D. Dutton, P. Mackett, C. Butler, I. Gale Native defect identification in II–VI materials , Pages 119-127 , B.K. Meyer, W. Stadler Defect recovery of ion-implanted CdTe , Pages 128-133 , A. Burchard, R. Magerle, J. Freidinger, S.G. Jahn, M. Deicher Cadmium vacancy related defects in MBE grown CdTe , Pages 134-138 , L. Worschech, W. Ossau, F. Fischer, A. Waag, G. Landwehr Characterization by diffuse X-ray scattering of damage in ion-implanted HgCdTe , Pages 139-143 , A. Declémy, P.O. Renault Point defects in Te-rich CdTe , Pages 144-147 , O. Panchouk, P. Fochouk, P. Feichouk Formation of low resistance contacts to p-CdTe by annealing autocatalytically deposited Ni–P alloy coatings , Pages 148-152 , R.W. Miles, B. Ghosh, S. Duke, J.R. Bates, M.J. Carter, P.K. Datta, R. Hill Electrically active defects in detector-grade CdTe:Cl and CdZnTe materials grown by THM and HPBM , Pages 153-158 , L. Chibani, M. Hage-Ali, P. Siffert Transmission electron microscopy of CdTe/CdS based solar cells , Pages 159-163 , Y.Y. Loginov, K. Durose, H.M. Al-Allak, S.A. Galloway, S. Oktik, A.W. Brinkman, H. Richter, D. Bonnet Conductivity conversion in CdTe layers , Pages 164-167 , V. Valdna, F. Buschmann, E. Mellikov Lattice sites of Li in CdTe , Pages 168-171 , M. Restle, K. Bharuth-Ram, H. Quintel, C. Ronning, H. Hofsäss, U. Wahl, S.G. Jahn Thermal stability of substitutional Ag in CdTe , Pages 172-176 , S.G. Jahn, H. Hofsäss, M. Restle, C. Ronning, H. Quintel, K. Bharuth-Ram, U. Wahl ZnSe 1− x Te x solid solutions , Pages 177-180 , V. Valdna, J. Hiie, U. Kallavus, A. Mere, T. Piibe Palladium as impurity in ZnTe , Pages 181-185 , S. Hermann, H.-E. Mahnke, D. Schumann, B. Spellmeyer, G. Sulzer, J. Bollmann, B. Reinhold, J. Röhrich, M. Wienecke, R. Yankov, H.-E. Gumlich A-centers modifying in CdTe–Yb crystals , Pages 186-189 , E.S. Nikonyuk, V.Z. Shlyakhovuy, M.O. Kovalets, M.I. Kuchma, Z.I. Zakharuk, V.M. Frasuniak Luminescence and nonradiative deactivation of excited states involving oxygen defect centers in polycrystalline ZnO , Pages 190-194 , H.-J. Egelhaaf, D. Oelkrug Structural properties of CdTe and Hg 1− x Cd x Te epitaxial layers grown on sapphire substrates , Pages 195-200 , N.V. Sochinskii, J.C. Soares, E. Alves, M.F. da Silva, P. Franzosi, S. Bernardi, E. Diéguez Ordered phase in HgCdTe thin films grown by reactive deposition in RF mercury glow discharge , Pages 201-204 , L.G. Mansurov, V.G. Savitsky Fundamental studies on compensation mechanisms in II–VI compounds , Pages 205-213 , Yves Marfaing Self-compensation in halogen doped CdTe grown by molecular beam epitaxy , Pages 214-218 , F. Fischer, A. Waag, L. Worschech, W. Ossau, S. Scholl, G. Landwehr, J. Mäkinen, P. Hautojärvi, C. Corbel Self-compensation studies in Cd-saturated In-doped CdTe , Pages 219-222 , L. Shcherbak, P. Feichouk, P. Fochouk, O. Panchouk Two stream diffusion of Hg into CdTe , Pages 223-228 , M.U. Ahmed, E.D. Jones, J.B. Mullin, N.M. Stewart Diffusivity of mercury vacancies in Hg 0.8 Cd 0.2 Te , Pages 229-233 , M. Neubert, K. Jacobs Oscillations of the composition of HgCdTe solid solution after laser annealing , Pages 234-238 , R. Ciach, M. Faryna, M. Kuźma, M. Pociask, E. Sheregii Transition-metal impurities in II–VI semiconductors: characterization and switching of charge states , Pages 239-249 , J. Kreissl, H.-J. Schulz Influence of zinc on the photorefractive behaviour of Cd 1− x Zn x Te:V , Pages 250-258 , G. Martel, J.Y. Moisan, B. Lambert, M. Gauneau, S. Stephan, N. Wolffer, P. Gravey, A. Aoudia, E. Rzepka, Y. Marfaing, R. Triboulet, M.C. Busch, M. Hadj-Ali, J.M. Koebel, P. Siffert, G. Bremond, A. Zerrai, G. Marrakchi Vanadium in CdTe , Pages 259-263 , P. Christmann, J. Kreissl, D.M. Hofmann, B.K. Meyer, R. Schwarz, K.W. Benz Relationship between deep levels in vanadium-doped CdTe and photorefractive effect , Pages 264-270 , A. Zerrai, G. Marrakchi, G. Bremond, J.Y. Moisan, G. Martel, M. Gauneau, B. Lambert, P. Gravey, N. Wolffer, A. Aoudia, Y. Marfaing, R. Triboulet, J.M. Koebel, M. Hadj-Ali, P. Siffert Noncontact characterization of CdTe doped with V or Ti , Pages 271-276 , C. Eiche, W. Joerger, R. Schwarz, K.W. Benz Identification of titanium dopants in CdS, CdSe and Cd(S,Se) crystals by luminescence and EPR methods , Pages 277-281 , P. Peka, M.U. Lehr, H.-J. Schulz, J. Dziesiaty, S. Müller Deep electron states in gallium-doped CdMnTe mixed crystals , Pages 282-285 , J. Szatkowski, E. Płaczek-Popko, A. Hajdusianek, B. Bieg Defects study by photoluminescence and cathodoluminescence in vanadium doped CdZnTe , Pages 286-291 , E. Rzepka, A. Lusson, A. Riviere, A. Aoudia, Y. Marfaing, R. Triboulet Author index , Pages 442-448 Subject index , Pages 449-450 Author index , Pages 292-295 Subject index , Pages 296-297