Secondary Ion Mass Spectrometry SIMS II : Proceedings of the Second International Conference on Secondary Ion Mass Spectrometry (SIMS II) Stanford University, Stanford, California, USA August 27–31, 1979
معرفی کتاب «Secondary Ion Mass Spectrometry SIMS II : Proceedings of the Second International Conference on Secondary Ion Mass Spectrometry (SIMS II) Stanford University, Stanford, California, USA August 27–31, 1979» نوشتهٔ Nicholas Winograd (auth.), Prof. A. Benninghoven, Dr. C. A. Evans Jr., Dr. R. A. Powell, Prof. R. Shimizu, Dr. H. A. Storms (eds.)، منتشرشده توسط نشر Springer-Verlag Berlin Heidelberg در سال 1979. این کتاب در فرمت pdf، زبان انگلیسی ارائه شده است.
I. Fundamentals Chairpersons: D.E. Harrison and C.A. Evans, Jr..- Invited: The Dynamics of Ion-Solid Interactions: A Basis for Understanding SIMS.- Invited: Simultaneous Measurements of Photon and Secondary Ion Emissions from Ion-Bombarded Metal Surfaces.- Atom Ejection Mechanisms and Models.- New Models of Sputtering and Ion Knock-On Mixing.- Clustering Distances in Secondary Ion Mass Spectrometry.- Basic Aspects in the Sputtering of Atoms, Ions, and Excited States.- Cluster Formation in SIMS: CO on PdAg.- Effect of Partial Oxygen Pressure on Metal Single Crystals Bombarded by Noble Gas Ions.- A Comparison of Absolute Yields of Excited Neutrals and Positive Ions from Ion-Bombarded Surfaces.- Correlation Between the Spectral Ionization Probability of Sputtered Atoms and the Electron Density of States.- Physical Aspects of the Valence Model’s Parameters.- Negative Ion Emission from Surfaces Covered with Cesium and Bombarded by Noble Gas Ions.- Angle-Resolved SIMS—A New Technique for the Determination of Surface Structure.- II. Quantitation Chairpersons: D.B. Wittry and P. Williams.- Invited: Factors Influencing Secondary Ion Yields.- Invited: Instrumental Effects on Quantitative Analysis by Secondary Ion Mass Spectrometry.- A Quantitative Model for the Effects on Secondary Ion Emission of Gaseous Absorption at Solid Surfaces Under Noble Gas Ion Bombardment.- The Application of Ion Implantation to Quantitative SIMS Analysis.- Energy Filtering and Quantitative SIMS Analysis of Silicates for Major and Trace Elements.- Quantitative Analysis of Doped GaAs by Quadrupole SIMS.- Trace Element Analysis of Silicates by Ion Microprobe.- Imaging of Element Distributions by Ion Microprobe.- Secondary Ion Emission from Titanium Alloys Under Argon and Oxygen Bombardment.- Effect of Alloying in Secondary Ion Emission from AgPd and CrNi Systems.- III. Semiconductors Chairpersons: C.W. Magee and W. Werner.- Invited: Quantitation of SIMS for Semiconductor Processing Technology.- Problems Encountered in Depth Profiling of Nitrogen and Oxygen in Silicon by Means of Secondary Ion Mass Spectrometry.- Depth Profiling of Phosphorus in Silicon Using Cesium Bombardment Negative SIMS.- Chromium and Iron Determination in GaAs Epitaxial Layers.- Thermal Redistribution of Cr in GaAs Due to Damage, Stress and Concentration Gradients.- On-Line Sputter Rate Measurements During SIMS, AES Depth Profiling.- Laser Induced Redistribution of Ion Implanted and Surface Deposited B in Silicon: A SIMS Study.- SIMS Identification of Impurity Segregation to Grain Boundaries in Cast Multigrained Silicon.- SIMS Studies in Compound Semiconductors.- Characterization for Composition and Uniformity of MCVD Glass Film by Secondary Ion Mass Spectrometry (SIMS).- SIMS Study of Metallized Silicon Semiconductors.- IV. Static SIMS Chairperson: A. Benninghoven.- Invited: Molecular Secondary Ion Emission.- Invited: Analytical Applications of SIMS.- Static SIMS Investigations of Ami no Acid Mixtures.- Static SIMS of Ami no Acid Overlayers.- Static SIMS Studies of Metal-Covered W(110) Surfaces.- Investigation of Surface Reactions by SIMS: Nickel-Oxygen-Hydrogen- Interacti on.- Study of Inorganic Salts by Static and Dynamic Secondary Ion Mass Spectrometry (SIMS).- Secondary Ion Mass Spectrometry of Ami no Acids by Proton and Alkali Ion Attachment.- V. Metallurgy Chairpersons: J.D. Brown and A.P. von Rosenstiel.- Invited: Application of SIMS to Analysis of Steels.- Investigation of Metal Corrosion Mechanisms Using Stable Isotopes with the Ion Microprobe.- Investigations of Corrosion Layers on Mild Steel with a Direct Imaging Mass Spectrometer.- The Use of SIMS in the Oxidation of Metals.- Influence of Atomic Concentrations on Ion Emission Yields of Alloys Flooded with Oxygen.- Application of SIMS and AES to Environmental Studies of Fatigue Crack Growth in Aluminum Alloys.- Application of Ion Microprobe to Surface Properties of Cold-Rolled Steel Sheet.- Some Applications of SIMS and Other Surface Sensitive Techniques for the Chemical Characterization of Industrial Steel Surfaces.- VI. Instrumentation Chairpersons: D.S. Simons and F.G. Rüdenauer.- Invited: Analytical Requirements of SIMS and the Instrumental Implications.- Invited: Some Considerations on Secondary Ion Optics.- A Compact Cs-Evaporator for High Sensitivity SIMS.- Comparison of Laser Ionization and Secondary Ion Mass Spectrometry for Organic Materials Analysis.- Application to Semiconductor Characterization of a Mass-Filtered, Microfocussed Ion Gun and High-Transmission Quadrupole.- Transmission of Quadrupole Mass Spectrometers for SIMS Studies.- SIMS Apparatus to Study Ion Impact Desorption.- Digital Mass Control for an Ion Microprobe Mass Analyzer.- Computer-Controlled Peak-Top Search Procedure.- A Computer-Based Instrument Control and Data Acquisition System for a Quadrupole Secondary Ion Mass Spectrometry Instrument.- How to Make the Most of the SIMS Method by Means of the Scanning Ion Microscope A-DIDA.- Sputtered Neutral Mass Spectrometry Using a Microwave Plasma.- Investigation of Monolayers at High Primary Ion Current Densities.- VII. Geology Chairpersons: J. Okano and C. Meyer.- SIMS Measurement of Mg Isotopic Ratio in a Chondrite.- Negative Molecular Ion Analysis of Inorganic Sulfur-Oxygen Salts by SIMS.- SIMS Measurements of Tracer Diffusivity of Oxygen in Titaniun Dioxides and Sulfur in a Calcium Sulfide.- SIMS Analysis of TiO2, Including Depth Profiling.- Ion Microprobe Analysis of Small Heavy Metal Particles and Their Compounds.- VIII. Panel Discussion Chairperson: I.L. Kofsky.- Applications of Particle Accelerator-Assisted Ultra-High Sensitivity SIMS.- IX. Biology Chairpersons: M.S. Burns and G.H. Morrison.- Invited: Biomedical Applications of Secondary Ion Emission MicroAnalysis.- Diffusible Ion Localization in Biological Tissue by Ion Microscopy.- Determination of Isotope Ratios of Calcium and Iron in Human Blood by Secondary Ion Mass Spectrometry.- Biogenic and Non-Biogenic Carbonates of Calcium and Magnesium: New Studies by Secondary Ion Imaging.- Localization of Elements in Botanical Materials by Secondary Ion Mass Spectrometry.- Secondary Ion Emission Microanalysis of the Pigments Associated with the Eye: Preliminary Data.- Comparison of Spectra of Biochemical Compounds and Tissue Preparations.- X. Combined Techniques Chairpersons: C. Johnson and W.H. Christie.- Invited: High Sensitivity SIMS Using DC Accelerators.- Combined SIMS, AES, and XPS Investigations of Oxygen-Covered 3d Transition Metal Surfaces.- Oxidation of Nickel Base Alloys Flooded with Oxygen Under Ionic Bombardment.- Matrix Effect Studies by Comparative SNMS and SIMS of Oxidized Ce, Gd and Ta Surfaces.- XPS/LEED/SIMS Study of the Ni(100)/02 System: Origin of the Two 0(1s) Features.- Combined SIMS, AES and XPS Study of CdxHg1\_xTe.- SIMS Depth Profiling of Thin and Ultrathin Films of Covalently Bonded Organic Overlayers.- Alpha-Recoil and Fission Fragment Induced Desorption of Secondary Ions.- XI. Postdeadline Papers.- Use of the IMS-3f High Mass Resolving Power.- The Bombardment Angle Dependence of the Sputtering and Secondary Ion Yield for Oxygen Ion Bombardment of Silicon.- Secondary Ion Mass Spectrometry of Small Molecules Held at Cryogenic Temperatures.- Index of Authors. Front Matter....Pages I-XIII Front Matter....Pages 1-1 The Dynamics of Ion-Solid Interactions: A Basis for Understanding SIMS....Pages 2-6 Simultaneous Measurements of Photon and Secondary Ion Emissions from Ion-Bombarded Metal Surfaces....Pages 7-11 Atom Ejection Mechanisms and Models....Pages 12-14 New Models of Sputtering and Ion Knock-On Mixing....Pages 15-17 Clustering Distances in Secondary Ion Mass Spectrometry....Pages 18-20 Basic Aspects in the Sputtering of Atoms, Ions, and Excited States....Pages 21-25 Cluster Formation in SIMS: CO on PdAg....Pages 26-28 Effect of Partial Oxygen Pressure on Metal Single Crystals Bombarded by Noble Gas Ions....Pages 29-32 A Comparison of Absolute Yields of Excited Neutrals and Positive Ions from Ion-Bombarded Surfaces....Pages 33-33 Correlation Between the Spectral Ionization Probability of Sputtered Atoms and the Electron Density of States....Pages 34-36 Physical Aspects of the Valence Model’s Parameters....Pages 37-39 Negative Ion Emission from Surfaces Covered with Cesium and Bombarded by Noble Gas Ions....Pages 40-43 Angle-Resolved SIMS—A New Technique for the Determination of Surface Structure....Pages 44-46 Front Matter....Pages 47-47 Factors Influencing Secondary Ion Yields....Pages 48-52 Instrumental Effects on Quantitative Analysis by Secondary Ion Mass Spectrometry....Pages 53-57 A Quantitative Model for the Effects on Secondary Ion Emission of Gaseous Absorption at Solid Surfaces Under Noble Gas Ion Bombardment....Pages 58-60 The Application of Ion Implantation to Quantitative SIMS Analysis....Pages 61-61 Energy Filtering and Quantitative SIMS Analysis of Silicates for Major and Trace Elements....Pages 62-63 Quantitative Analysis of Doped GaAs by Quadrupole SIMS....Pages 64-66 Trace Element Analysis of Silicates by Ion Microprobe....Pages 67-69 Front Matter....Pages 47-47 Imaging of Element Distributions by Ion Microprobe....Pages 70-72 Secondary Ion Emission from Titanium Alloys Under Argon and Oxygen Bombardment....Pages 73-75 Effect of Alloying in Secondary Ion Emission from AgPd and CrNi Systems....Pages 76-78 Front Matter....Pages 79-79 Quantitation of SIMS for Semiconductor Processing Technology....Pages 80-84 Problems Encountered in Depth Profiling of Nitrogen and Oxygen in Silicon by Means of Secondary Ion Mass Spectrometry....Pages 85-87 Depth Profiling of Phosphorus in Silicon Using Cesium Bombardment Negative SIMS....Pages 88-90 Chromium and Iron Determination in GaAs Epitaxial Layers....Pages 91-94 Thermal Redistribution of Cr in GaAs Due to Damage, Stress and Concentration Gradients....Pages 95-96 On-Line Sputter Rate Measurements During SIMS, AES Depth Profiling....Pages 97-99 Laser Induced Redistribution of Ion Implanted and Surface Deposited B in Silicon: A SIMS Study....Pages 100-102 SIMS Identification of Impurity Segregation to Grain Boundaries in Cast Multigrained Silicon....Pages 103-105 SIMS Studies in Compound Semiconductors....Pages 106-106 Characterization for Composition and Uniformity of MCVD Glass Film by Secondary Ion Mass Spectrometry (SIMS)....Pages 107-109 SIMS Study of Metallized Silicon Semiconductors....Pages 110-113 Front Matter....Pages 115-115 Molecular Secondary Ion Emission....Pages 116-121 Analytical Applications of SIMS....Pages 122-126 Static SIMS Investigations of Amino Acid Mixtures....Pages 127-129 Static SIMS of Amino Acid Overlayers....Pages 130-132 Static SIMS Studies of Metal-Covered W(110) Surfaces....Pages 133-135 Investigation of Surface Reactions by SIMS: Nickel-Oxygen-Hydrogen-Interaction....Pages 136-138 Front Matter....Pages 115-115 Study of Inorganic Salts by Static and Dynamic Secondary Ion Mass Spectrometry (SIMS)....Pages 139-141 Secondary Ion Mass Spectrometry of Amino Acids by Proton and Alkali Ion Attachment....Pages 142-144 Front Matter....Pages 145-145 Application of SIMS to Analysis of Steels....Pages 146-150 Investigation of Metal Corrosion Mechanisms Using Stable Isotopes with the Ion Microprobe....Pages 151-153 Investigations of Corrosion Layers on Mild Steel with a Direct Imaging Mass Spectrometer....Pages 154-156 The Use of SIMS in the Oxidation of Metals....Pages 157-159 Influence of Atomic Concentrations on Ion Emission Yields of Alloys Flooded with Oxygen....Pages 160-162 Application of SIMS and AES to Environmental Studies of Fatigue Crack Growth in Aluminum Alloys....Pages 163-166 Application of Ion Microprobe to Surface Properties of Cold-Rolled Steel Sheet....Pages 167-169 Some Applications of SIMS and Other Surface Sensitive Techniques for the Chemical Characterization of Industrial Steel Surfaces....Pages 170-173 Front Matter....Pages 175-175 Analytical Requirements of SIMS and the Instrumental Implications....Pages 176-180 Some Considerations on Secondary Ion Optics....Pages 181-185 A Compact Cs-Evaporator for High Sensitivity SIMS....Pages 186-188 Comparison of Laser Ionization and Secondary Ion Mass Spectrometry for Organic Materials Analysis....Pages 189-190 Application to Semiconductor Characterization of a Mass-Filtered, Microfocussed Ion Gun and High-Transmission Quadrupole....Pages 191-191 Transmission of Quadrupole Mass Spectrometers for SIMS Studies....Pages 192-195 SIMS Apparatus to Study Ion Impact Desorption....Pages 196-198 Digital Mass Control for an Ion Microprobe Mass Analyzer....Pages 199-201 Computer-Controlled Peak-Top Search Procedure....Pages 202-202 A Computer-Based Instrument Control and Data Acquisition System for a Quadrupole Secondary Ion Mass Spectrometry Instrument....Pages 203-205 Front Matter....Pages 175-175 How to Make the Most of the SIMS Method by Means of the Scanning Ion Microscope A-DIDA....Pages 206-208 Sputtered Neutral Mass Spectrometry Using a Microwave Plasma....Pages 209-211 Investigation of Monolayers at High Primary Ion Current Densities....Pages 212-214 Front Matter....Pages 215-215 SIMS Measurement of Mg Isotopic Ratio in a Chondrite....Pages 216-218 Negative Molecular Ion Analysis of Inorganic Sulfur-Oxygen Salts by SIMS....Pages 219-221 SIMS Measurements of Tracer Diffusivity of Oxygen in Titanium Dioxides and Sulfur in a Calcium Sulfide....Pages 222-224 SIMS Analysis of TiO 2 , Including Depth Profiling....Pages 225-228 Ion Microprobe Analysis of Small Heavy Metal Particles and Their Compounds....Pages 229-232 Front Matter....Pages 233-233 Applications of Particle Accelerator-Assisted Ultra-High Sensitivity SIMS....Pages 234-236 Front Matter....Pages 237-237 Biomedical Applications of Secondary Ion Emission Micro-Analysis....Pages 238-243 Diffusible Ion Localization in Biological Tissue by Ion Microscopy....Pages 244-244 Determination of Isotope Ratios of Calcium and Iron in Human Blood by Secondary Ion Mass Spectrometry....Pages 245-247 Biogenic and Non-Biogenic Carbonates of Calcium and Magnesium: New Studies by Secondary Ion Imaging....Pages 248-251 Localization of Elements in Botanical Materials by Secondary Ion Mass Spectrometry....Pages 252-255 Secondary Ion Emission Microanalysis of the Pigments Associated with the Eye: Preliminary Data....Pages 256-258 Comparison of Spectra of Biochemical Compounds and Tissue Preparations....Pages 259-259 Front Matter....Pages 261-261 High Sensitivity SIMS Using DC Accelerators....Pages 262-262 Combined SIMS, AES, and XPS Investigations of Oxygen-Covered 3d Transition Metal Surfaces....Pages 263-265 Oxidation of Nickel Base Alloys Flooded with Oxygen Under Ionic Bombardment....Pages 266-268 Matrix Effect Studies by Comparative SNMS and SIMS of OxidizedCe, Gd and Ta Surfaces....Pages 269-271 Front Matter....Pages 261-261 XPS/LEED/SIMS Study of the Ni(100)/0 2 System: Origin of the Two 0(1s) Features....Pages 272-274 Combined SIMS, AES and XPS Study of Cd x Hg 1-x Te....Pages 275-277 SIMS Depth Profiling of Thin and Ultrathin Films of Covalently Bonded Organic Overlayers....Pages 278-280 Alpha-Recoil and Fission Fragment Induced Desorption of Secondary Ions....Pages 281-284 Front Matter....Pages 285-285 Use of the IMS-3f High Mass Resolving Power....Pages 286-290 The Bombardment Angle Dependence of the Sputtering and Secondary Ion Yield for Oxygen Ion Bombardment of Silicon....Pages 291-291 Secondary Ion Mass Spectrometry of Small Molecules Held at Cryogenic Temperatures....Pages 292-295 Back Matter....Pages 297-300
دانلود کتاب Secondary Ion Mass Spectrometry SIMS II : Proceedings of the Second International Conference on Secondary Ion Mass Spectrometry (SIMS II) Stanford University, Stanford, California, USA August 27–31, 1979