Quantum Dots: Fundamentals, Applications, and Frontiers: Proceedings of the NATO ARW on Quantum Dots: Fundamentals, Applications and Frontiers, Crete, ... II: Mathematics, Physics and Chemistry, 190)

This volume contains papers delivered at a NATO Advanced Research Workshop and provides a broad introduction to all major aspects of quantum dot structures. Such structures have been produced for studies of basic physical phenomena, for device fabrication and, on a more speculative level, have been suggested as components of a solid-state realization of a quantum computer. The book is structured so that the reader is introduced to the methods used to produce and control quantum dots, followed by discussions of their structural, electronic, and optical properties. It concludes with examples of how their optical properties can be used in practical devices, including lasers and light-emitting diodes operating at the commercially important wavelengths of 1.3 μm and 1.55 μm. Contents......Page 6 Preface......Page 9 List of Contributors......Page 11 Quantum Dots in the InAs/GaAs System: An Overview of their Formation......Page 16 First-Principles Study of InAs/GaAs(001) Heteroepitaxy......Page 42 Formation of Two-Dimensional Si/Ge Nanostructures Observed by STM......Page 58 Diffusion, Nucleation and Growth on Metal Surfaces......Page 70 The Mechanism of the Stranski–Krastanov Transition......Page 86 Off-lattice KMC Simulations of Stranski-Krastanov-Like Growth......Page 104 Temperature Regimes of Strain-Induced InAs Quantum Dot Formation......Page 118 Kinetic Modelling of Strained Films: Effects of Wetting and Facetting......Page 135 Ge/Si Nanostructures with Quantum Dots grown by Ion-Beam-Assisted Heteroepitaxy......Page 149 Lateral Organization of Quantum Dots on A Patterned Substrate......Page 159 Some Thermodynamic Aspects of Self-Assembly of Quantum Dot Arrays......Page 171 The Search for Materials with Self-Assembling Properties: The Case of Si-based Nanostructures......Page 187 X-Ray Scattering Methods for the Study of Epitaxial Self-Assembled Quantum Dots......Page 197 Carbon-Induced Ge Dots on Si(100): Interplay of Strain and Chemical Effects......Page 222 Growth Information Carried by Reflection High-Energy Electron Diffraction......Page 234 Efficient Calculation of Electron States in Self-Assembled Quantum Dots: Application to Auger Relaxation......Page 251 Quantum Dot Molecules and Chains......Page 268 Collective Properties of Electrons and Holes in Coupled Quantum Dots......Page 280 Phase Transitions in Wigner Molecules......Page 295 Fast Control of Quantum States in Quantum Dots: Limits due to Decoherence......Page 310 Real Space Ab Initio Calculations of Excitation Energies in Small Silicon Quantum Dots......Page 325 GeSi/Si(001) Structures with Self-Assembled Islands: Growth and Optical Properties......Page 341 Quantum Dots in High Electric Fields: Field and Photofield Emission from Ge Nanoclusters on Si(100)......Page 360 Optical Emission Behavior of Si Quantum Dots......Page 375 Strain-Driven Phenomena upon Overgrowth of Quantum Dots: Activated Spinodal Decomposition and Defect Reduction......Page 383

this Volume Contains Papers Delivered At A Nato Advanced Research Workshop And Provides A Broad Introduction To All Major Aspects Of Quantum Dot Structures. Such Structures Have Been Produced For Studies Of Basic Physical Phenomena, For Device Fabrication And, On A More Speculative Level, Have Been Suggested As Components Of A Solid-state Realization Of A Quantum Computer. The Book Is Structured So That The Reader Is Introduced To The Methods Used To Produce And Control Quantum Dots, Followed By Discussions Of Their Structural, Electronic, And Optical Properties. It Concludes With Examples Of How Their Optical Properties Can Be Used In Practical Devices, Including Lasers And Light-emitting Diodes Operating At The Commercially Important Wavelengths Of 1.3 µm And 1.55 µm.

The InAs-GaAs heteroepitaxial system has a lattice mismatch of = 7% and under very specific conditions the growth mode follows a version of the Stranski-Krastanov (SK) mechanism, which results in the formation of coherent (dislocation-free) three-dimensional (3D) islands, after the growth of between one and two monolayers (MLs) in a two dimensional (2D) layer-by-layer pseudomorphic mode.