Properties, Processing and Applications of Gallium Nitride and Related Semiconductors (E M I S DATAREVIEWS SERIES)

Since the early 1990s when highly efficient gallium nitride blue and ultraviolet LEDs and laser diodes were first demonstrated, the world market for such devices has rapidly expanded. Based on its outstanding properties, including a wide energy band gap, high thermal conductivity, and high electron drift velocity, GaN is uniquely suited for many novel devices including solar-blind UV light detectors, high power microwave transistors, and cold cathode electron emitters. The widening range of applications is generating an 80% p.a. growth in R&D. This book covers the basic physical and chemical properties, surveys existing processing technology, and presents summaries of the current state-of-the-art of devices. This book is an excellent reference for authoritative reviews of all aspects relevant to current devices, and for developing new devices. Front Matter 1 Introduction 3 Contributing Authors 4 Abbreviations 11 Front Matter 17 Introduction 19 Contributing Authors 20 Abbreviations 27 Table of Contents 33 Part A. Physical, Electrical and Optical Properties 37 A1. Structural, Mechanical and Thermal Properties of Group III Nitrides 37 A1.1 Common Crystal Structures of the Group III Nitrides 38 A1.2 Lattice Parameters of the Group III Nitrides 41 A1.3 Mechanical Properties of the Group III Nitrides 46 A1.4 Thermal Properties of the Group III Nitrides 56 A2. AlN: Electrical, Electronic and Optical Properties 64 A2.1 Bandedge and Optical Functions of AlN 65 A2.2 Raman and IR Studies of AlN 69 A2.3 Photoluminescence/Cathodoluminescence of Clean Samples of AlN 71 A2.4 Electrical and Transport Properties of AlN 74 A3. GaN: Electrical, Electronic and Optical Properties 76 A3.1 Bandedge and Optical Functions of GaN 77 A3.2 Raman and IR Studies of GaN 84 A3.3 Luminescence of GaN 90 A4. InN: Electrical, Electronic and Optical Properties 97 A4.1 Bandedge and Optical Functions of InN 98 A4.2 Raman and IR Studies of InN 102 A4.3 Basic Physical Properties of InN 104 A4.4 Electrical Transport Properties of InN 110 A4.5 Electrical Transport Properties of GalnN and AlInN 116 A5. AlGaN: Electrical, Electronic and Optical Properties 118 A5.1 Optical Properties of AlGaN 119 A5.2 Raman and IR Reflectance Studies of AlGaN 123 A5.3 Electrical and Transport Properties of AlGaN 127 A6. Band Structure of Group III Nitrides 133 A6.1 General Remarks on the Band Structures of Group III Nitrides 134 A6.2 Electronic Band Structures of GaN and AlN 138 A6.3 Spin-Orbit and Crystal-Field Splitting Energies of GaN and AlN 147 A6.4 Luttinger and Bir-Pikus Parameters of GaN and AlN 151 A7. Crystal Defects in GaN and Related Compounds 154 A7.1 General Remarks on Extended Defects in GaN and Related Materials 155 A7.2 Planar Defects in GaN: Basal Plane Faults, Prismatic Faults, Stacking Mismatch Boundaries and Inversion Domain Boundaries 159 A7.3 Defects in GaN and Related Materials: Perfect Dislocations, Partial Dislocations, Dislocation Movement and Cracks 167 A7.4 Defects in GaN and Related Materials: Open Core Dislocations and V-Defects 172 A8. Impurities and Native Defects in GaN and Related Compounds 176 A8.1 Native Defects, Impurities and Doping in GaN and Related Compounds: General Remarks 177 A8.2 Native Point Defects in GaN and Related Compounds 183 A8.3 O, C and Other Unintentional Impurities in GaN and Related Compounds 186 A9. Chemical and Compositional Analysis of GaN and Related Materials 196 A9.1 Chemical and Compositional Analysis of GaN and Related Compounds: General Remarks 197 A9.2 Measurement of Alloy Content in GaN and Related Materials 200 A9.3 Measurement of Dopants and Impurities in GaN and Related Materials 209 Part B. Materials Synthesis and Processing 216 B1. Bulk Crystal Growth of GaN and Related Compounds 216 B1.1 High Pressure Solution Growth of GaN and Related Compounds 217 B1.2 Sublimation Growth of GaN and AlN 225 B1.3 RF Growth of Bulk GaN and AlN 233 Part B. Materials Synthesis and Processing 236 B1. Bulk Crystal Growth of GaN and Related Compounds 236 B1.1 High Pressure Solution Growth of GaN and Related Compounds 237 B1.2 Sublimation Growth of GaN and AlN 245 B1.3 RF Growth of Bulk GaN and AlN 253 B2. Epitaxial Growth of GaN and Related Compounds 256 B2.1 Sapphire Substrates for Growth of GaN and Related Compounds 257 B2.2 SiC Substrates for Growth of GaN and Related Compounds 262 B2.3 Epitaxy of III-N Layers on GaN Substrates 267 B2.4 Alternative Oxide Substrates for GaN Heteroepitaxy 272 B3. Ion Implantation of GaN and Related Compounds 278 B3.1 General Remarks on Ion Implantation of GaN and Related Compounds 279 B3.2 Impurity Redistribution of Implanted and Annealed GaN 280 B3.3 Electrical Properties of Ion Implanted and Annealed GaN 284 B3.4 Optical Properties of Implanted GaN 288 B4. Etching of GaN and Related Compounds 292 B4.1 General Remarks on III-V Nitride Etching 293 B4.2 Dry Etching of GaN and Related Compounds 295 B4.3 Wet Etching of GaN and Related Compounds 302 Part C. Specifications, Characterisation and Applications of GaN Based Devices 309 C1. Material Interfaces with GaN and Related Compounds 309 C1.1 Ohmic Contacts to GaN and the III-V Nitride Semiconductor Alloys 310 C1.2 Schottky Barrier Contacts to GaN 315 C1.3 Band Offsets at Interfaces between AlN, GaN and InN 319 Part C. Specifications, Characterisation and Applications of GaN Based Devices 325 C1. Material Interfaces with GaN and Related Compounds 325 C1.1 Ohmic Contacts to GaN and the III-V Nitride Semiconductor Alloys 326 C1.2 Schottky Barrier Contacts to GaN 331 C1.3 Band Offsets at Interfaces between AlN, GaN and InN 335 C2. Strained GaInN and Quantum Wells 341 C2.1 GaInN Quantum Wells: Composition Pulling Effect 342 C2.2 GaInN Quantum Wells: Microstructure 347 C2.3 GaInN Quantum Wells: Optical Properties 351 C2.4 GaInN Quantum Wells: Effect of Phase Separation on Lasing 355 C2.5 GaInN Quantum Wells: Piezoelectricity 358 C3. GaN-Based Light Emitting Diodes 363 C3.1 UV, Blue and Green InGaN Quantum Well Structure LEDs 364 C3.2 Toyoda Gosei GaN LEDs 373 C3.3 GaN LEDs Grown on 6H-SiC 383 C3.4 Colour Conversion of GaN LEDs 388 C3.5 Degradation Mechanisms in GaN LEDs 391 C4. GaN-Based Transistors 397 C4.1 General Remarks on GaN-Based Transistors and Potential for High Temperature/Power Operation 398 C4.2 GaN FET Structures: MESFET, MISFET, JFET and MODFET 401 C4.3 AlGaN/GaN HFETs/MODFETs 408 C4.4 GaN/SiC HBTs 411 C5. GaN-Based Lasers and Other Devices 414 C5.1 InGaN/GaN/AlGaN-Based Laser Diodes 415 C5.2 Optically Pumped Lasing and Current Injection Lasing in GaN-Based Laser Structures 424 C5.3 Gain Coefficient and Lasing Threshold in GaN-Based Lasers 431 Index 435 A 435 B 439 C 440 D 442 E 443 F 446 G 447 H 452 I 453 J 458 L 459 M 462 N 464 O 465 P 466 Q 468 R 468 S 470 T 473 U 473 V 474 W 475 X 476 Y 477 Z 477 Content: • Front Matter Introduction • Table of Contents • Interactive Graphs Table (224) •Part A. Physical, Electrical and Optical Properties A1. Structural, Mechanical and Thermal Properties of Group III Nitrides A2. AlN: Electrical, Electronic and Optical Properties A3. GaN: Electrical, Electronic and Optical Properties A4. InN: Electrical, Electronic and Optical Properties A5. AlGaN: Electrical, Electronic and Optical Properties A6. Band Structure of Group III Nitrides A7. Crystal Defects in GaN and Related Compounds A8. Impurities and Native Defects in GaN and Related Compounds A9. Chemical and Compositional Analysis of GaN and Related Materials •Part B. Materials Synthesis and Processing B1. Bulk Crystal Growth of GaN and Related Compounds B2. Epitaxial Growth of GaN and Related Compounds B3. Ion Implantation of GaN and Related Compounds B4. Etching of GaN and Related Compounds •Part C. Specifications, Characterisation and Applications of GaN Based Devices C1. Material Interfaces with GaN and Related Compounds C2. Strained GaInN and Quantum Wells C3. GaN-Based Light Emitting Diodes C4. GaN-Based Transistors C5. GaN-Based Lasers and Other Devices • Index Annotation Based on its outstanding properties, including a wide energy band gap, high thermal conductivity, and high electron drift velocity, GaN is uniquely suited for many novel devices including solar-blind UV light detectors, high power microwave transistors, and cold cathode electron emitters. This excellent reference covers the basic physical and chemical properties, surveys existing processing technology, and presents summaries of the current state-of-the-art of devices Edited By James H. Edgar... [et Al.]. Includes Bibliographical References And Index.