Properties of Iii-V Quantum Wells and Superlattices (E M I S Datareviews Series)

The characterization and precisely controlled building of atomic-scale mutilayers have been the subject of intensive R&D worldwide. Nanometric structures based on III-V semiconductors have attracted particular attention. Since 1970, around 15,000 papers have been published in all, of which 10,000 have appeared in the last 6 years. The resulting improved materials control is enabling engineers to achieve major improvements in the performance of microelectronic and optoelectronic devices such as QW lasers, tunnelling devices, modulators, switches and photodetectors. In this book, the large volume of research results which have accumulated is evaluated and distilled down to a useful, manageable concentration of up-to-date knowledge for electronic engineers and solid-state physicists. This has been carried out by an invited international team of over 50 specialists under the editorship of Professor Bhattacharya with support from INSPEC, who also compiled the subject index. There are 40 individually-written, self-contained modules ('Datareviews'), each specially commissioned to fit into a pre-determined structure. Subjects reviewed in depth include historical perspective, theory, epitaxial growth and doping, structure (e.g. X-ray diffraction), electronic properties, optical properties, modulation doping and devices. Each Datareview comprises tables, text, figures and expert guidance to the literature, as appropriate. Properties of III-V quantum wells and superlattices is intended both as a look-up source of evaluated data and as a finely-structured state-of-the-art review for academic and industrial R&D workers.Also available:Properties of Lattice-Matched and Strained Indium Gallium Arsenide - ISBN 9780863416620Properties of Silicon Carbide - ISBN 9780852968703The Institution of Engineering and Technology is one of the world's leading professional societies for the engineering and technology community. The IET publishes more than 100 new titles every year; a rich mix of books, journals and magazines with a back catalogue of more than 350 books in 18 different subject areas including: -Power & Energy -Renewable Energy -Radar, Sonar & Navigation -Electromagnetics -Electrical Measurement -History of Technology -Technology Management The characterization and precisely controlled building of atomic-scale mutilayers have been the subject of intensive R&D worldwide. Nanometric structures based on III-V semiconductors have attracted particular attention. Since 1970, around 15,000 papers have been published in all, of which 10,000 have appeared in the last 6 years. The resulting improved materials control is enabling engineers to achieve major improvements in the performance of microelectronic and optoelectronic devices such as QW lasers, tunnelling devices, modulators, switches and photodetectors. In this book, the large volume of research results which have accumulated is evaluated and distilled down to a useful, manageable concentration of up-to-date knowledge for electronic engineers and solid-state physicists. This has been carried out by an invited international team of over 50 specialists under the editorship of Professor Bhattacharya with support from INSPEC, who also compiled the subject index. There are 40 individually-written, self-contained modules ('Datareviews'), each specially commissioned to fit into a pre-determined structure. Subjects reviewed in depth include historical perspective, theory, epitaxial growth and doping, structure (e.g. X-ray diffraction), electronic properties, optical properties, modulation doping and devices. Each Datareview comprises tables, text, figures and expert guidance to the literature, as appropriate. Properties of III-V quantum wells and superlattices is intended both as a look-up source of evaluated data and as a finely-structured state-of-the-art review for academic and industrial R&D workers. Also Properties of Lattice-Matched and Strained Indium Gallium Arsenide - ISBN 9780863416620 Properties of Silicon Carbide - ISBN 9780852968703 The Institution of Engineering and Technology is one of the world's leading professional societies for the engineering and technology community. The IET publishes more than 100 new titles every year; a rich mix of books, journals and magazines with a back catalogue of more than 350 books in 18 different subject areas -Power & Energy -Renewable Energy -Radar, Sonar & Navigation -Electromagnetics -Electrical Measurement -History of Technology -Technology Management This volume describes the results of current research on the characterization and precisely-controlled building of atomic-scale multilayers of semiconductors. It should enable engineers to achieve great improvements in the performance of microelectronic and optoelectronic devices. An overview of current SiC research, which covers basic physical properties, optical properties, spectroscopic characterization, defects, the diffusion of impurities, etching, selective doping and crystal growth, microstructure, electronic properties and SiC-based devices. Annotation A finely-structured, state-of-the-art review on controlled building of atomic-scale mutilayers, where nanometric structures based on III-V semiconductors have attracted particular attention Annotation This well structured and fully indexed book helps to understand and fully characterize the SiC system