Properties and applications of amorphous materials : [proceedings of the NATO Advanced Study Institute on Properties and Applications of Amorphous Materials, Sec, Czech Republic, 25 June - 7 July 2000

The aim of this NATO ASI has been to present an up-to-date overview of current areas of interest in amorphous materials, with particular emphasis on electronic properties and device applications. In order to limit the material to a manageable amount, the meeting was concerned almost exclusively with semiconducting materials. This volume should be regarded as a follow-on to the NATO ASI held in Sozopol, Bulgaria in 1996 and published as "Amorphous Insulators and Semiconductors" edited by M.F. Thorpe and M.1. Mitkova (Kluwer Academic Publishers, NATO ASI series, 3 High Technology - Vol. 23). The lectures and seminars fill the gap between graduate courses and research seminars. The lecturers and seminar speakers were chosen as experts in their respective areas, and the lectures and seminars that were given are presented in this volume. During the first week of the meeting, an emphasis was placed on introductory lectures while the second week focused more on research seminars. There were two very good poster sessions that generated a lot of discussion, but these are not reproduced in this volume as the editors wanted to have only larger contributions to make the proceedings more coherent. Front Matter....Pages i-ix The Structure of Amorphous Materials....Pages 1-11 Short- and Medium-Range Order in Ge-(S, Se) Glasses Using Raman Scattering....Pages 13-24 Structural Characterization of Amorphous Ge x Se 100-x by Infrared and Raman Spectroscopy....Pages 25-34 Structural Relaxation in Amorphous Materials....Pages 35-44 Thermal Properties Studied on As 2 Se 3 Model Glass....Pages 45-54 Vibrational Excitations in Amorphous Materials....Pages 55-60 Rigidity and Self-Organization of Network Glasses and the Intermediate Phase....Pages 61-96 Onset of Rigidity in Steps in Chalcogenide Glasses....Pages 97-132 Network Stiffening and Chemical Ordering in Chalcogenide Glasses....Pages 133-166 The Chemical Threshold in Chalcogenide Glasses....Pages 167-176 Stochastic Matrix and Self-Organization in Glasses....Pages 177-187 First Principles Electronic Structure Methods....Pages 189-220 Electronic Structure of Amorphous Insulators and Photo-Structural Effects in Chalcogenide Glasses....Pages 221-250 The Electronic Properties of Nano, Micro and Amorphous Silicon....Pages 251-260 Transport in Amorphous Semiconductors....Pages 261-290 Nanometer-Scale Photo-Induced Structural Changes in Chalcogenide Glasses....Pages 291-300 Photoinduced Effects in Amorphous Semiconductors....Pages 301-310 Modeling of Photoinduced Anisotropies in Chalcogenide Glasses....Pages 311-319 Structure and Optically Induced Changes of Reactivity and Optical Properties of Amorphous Chalcogenides....Pages 321-328 Preparation and Structural Properties of Tetrahedrally Bonded Amorphous Carbon....Pages 329-342 Mechanical, Optical and Electrical Properties of Tetrahedrally Bonded Amorphous Carbon....Pages 343-354 Field Emission from Carbon Films Grown by the Cathodic Arc Process....Pages 355-368 Amorphous Silicon Materials and Devices for Active Matrix Arrays....Pages 369-400 Optical Properties of Amorphous and Microcrystalline Silicon Layers....Pages 401-432 Back Matter....Pages 434-447

the Particular Interest Represented In This State Of The Art Survey Of Amorphous Materials Is Their Electronic Properties And Device Applications.
The Book Is Organised In Five Sections, Starting With Some More Unusual Aspects Of Structure. Section 2 Deals With The Very New Area Of Self Organisation In Glasses And How This Relates To A Glass's Rigidity. The Next Section Surveys Electronic States And Transport Phenomena. The Fourth Section Deals With An Area Of Photoinduced Effects That Has Recently Seen Increased Interest Due To Possible Device Applications. Finally, Section 5 Covers Some Properties Specific To Amorphous Silicon And Amorphous Carbon.

Proceedings of the NATO Advanced Study Institute, held in Sec, Czech Republic, 25 June-7 July 2000