Progress in SOI structures and devices operating at extreme conditions : [proceedings of the NATO Advanced Research Workshop on Progress in SOI Structures and Devices Operating at Extreme Conditions, Kyiv, Ukraine, 15-20 October 2000

A review of the electrical properties, performance and physical mechanisms of the main silicon-on-insulator (SOI) materials and devices. Particular attention is paid to the reliability of SOI structures operating in harsh conditions. The first part of the book deals with material technology and describes the SIMOX and ELTRAN technologies, the smart-cut technique, SiCOI structures and MBE growth. The second part covers reliability of devices operating under extreme conditions, with an examination of low and high temperature operation of deep submicron MOSFETs and novel SOI technologies and circuits, SOI in harsh environments and the properties of the buried oxide. The third part deals with the characterization of advanced SOI materials and devices, covering laser-recrystallized SOI layers, ultrashort SOI MOSFETs and nanostructures, gated diodes and SOI devices produced by a variety of techniques. The last part reviews future prospects for SOI structures, analyzing wafer bonding techniques, applications of oxidized porous silicon, semi-insulating silicon materials, self-organization of silicon dots and wires on SOI and some new physical phenomena. Front Matter....Pages i-x Perspectives of Simox Technology....Pages 1-10 MBE Growth of the top Layer in Si/YSZ/Si Structure....Pages 11-15 SiCOI Structures. Technology and Characterization....Pages 17-29 New SiC on Insulator Wafers Based on the Smart-Cut® Approach and their Potential Applications....Pages 31-38 ELTRAN® (SOI-Epi WaferTM) Technology....Pages 39-86 Low Dimension Properties of Nanostructures on Ultrathin Layers of Silicon Formed by Oxidation of Ion Cut SOI Wafers and Electron Lithography....Pages 87-91 SOI For Harsh Environment Applications in the USA....Pages 93-104 Performance and Reliability of Deep Submicron SOI Mosfets in a Wide Temperature Range....Pages 105-127 Strategies for High Temperature Electronics....Pages 129-137 Charge Carrier Injection and Trapping in the Buried Oxides of SOI Structures....Pages 139-158 Cryogenic Investigations of SIMOX Buried Oxide Parameters....Pages 159-166 Gate-All-Around Technology for Harsh Environment Applications....Pages 167-188 Low-Noise High-Temperature SOI Analog Circuits....Pages 189-209 Influence of γ- Radiation on Short Channel SOI-MOSFETs with Thin SiO 2 Films....Pages 211-220 Radiation Effects in SOI Magnetic Sensitive Elements Under Different Radiation Conditions....Pages 221-227 Similarity Relation for I-V Characteristics of FETs with different Channel Shape....Pages 229-232 Laser-Recrystallized SOI Layers for Sensor Applications at Cryogenic Temperatures....Pages 233-237 Characterization and Modeling of Advanced SOI Materials and Devices....Pages 239-247 Modeling and Measurements of Generation and Recombination Currents in Thin-Film SOI Gated-Diodes....Pages 249-261 Defect Creation Mechanisms Due to Hot-Carriers in 0.15 μm SIMOX MOSFETs....Pages 263-268 Defects and their Electronic Properties in High-Pressure-Annealed SOI Structures Sliced by Hydrogen....Pages 269-288 DC and AC Models of Partially-Depleted SOI MOSFETs in Weak Inversion....Pages 289-298 On Scaling the Thin Film Si Thickness of SOI Substrates....Pages 299-308 Oxidized Porous Silicon Based SOI: Untapped Resources....Pages 309-327 Electron-Hole Pair Reversed Drift in SOI Structure....Pages 329-332 A Novel Depleted Semi-Insulating Silicon Material for High Frequency Applications....Pages 333-341 Self-Organizing Growth of Silicon Dot- and Wire-Like Microcrystals on Isolated Substrates....Pages 343-348 Back Matter....Pages 349-351 Proceedings of the NATO Advanced Research Workshop, held in Kyiv, Ukraine, October 15-20, 2000