Progress in Nano-Electro Optics IV: Characterization of Nano-Optical Materials and Optical Near-Field Interactions (Springer Series in Optical Sciences, 109)

This volume focuses on the characterization of nano-optical materials and optical-near field interactions. It begins with the techniques for characterizing the magneto-optical Kerr effect and continues with methods to determine structural and optical properties in high-quality quantum wires with high spatial uniformity. Further topics include: near-field luminescence mapping in InGaN/GaN single quantum well structures in order to interpret the recombination mechanism in InGaN-based nano-structures; and theoretical treatment of the optical near field and optical near-field interactions, providing the basis for investigating the signal transport and associated dissipation in nano-optical devices. Taken as a whole, this overview will be a valuable resource for engineers and scientists working in the field of nano-electro-optics. Annotation This volume focuses on the characterization of nano-optical materials and optical near-field interactions. It begins with the techniques for characterizing the magneto-optical Kerr effect and continues with methods to determine structural and optical properties in high-quality quantum wires with high spatial uniformity. Further topics include: near-field luminescence mapping in InGaN/GaN single quantum well structures in order to interpret the recombination mechanism in InGaN-based nano-structures; and theoretical treatment of the optical near field and optical near-field interactions, providing the basis for investigating the signal transport and associated dissipation in nano-optical devices. Taken as a whole, this overview will be a valuable resource for engineers and scientists working in the field of nano-electro-optics Focuses On Fundamental Aspects Of Nano-electro-optics. Starting With Fiber Probes And Related Devices For Generating And Detecting The Optical Near-field With High Efficiency And Resolution, The Next Chapter Addresses The Modulation Of An Electron Beam By Optical Near-fields. Further Topics Include: Fluorescence Spectroscopy, In Which Sample Molecules Are Excited By The Evanescent Surface Plasmon Field Close To Metallic Surfaces; Spatially Resolved Near-field Photoluminescence Spectroscopy Of Semiconductor Quantum Dots, Which Will Become An Essential Issue In Future Electro-optical Devices And Systems; And, Finally, The Quantum Theory Of The Optical Near-field. This Latter Theory Accounts For All The Essential Features Of The Interaction Between Optical Near-fields And Nanomaterials, Atoms And Molecules. This book focuses on chemical and nanophotonic technology to be used to develop novel nano-optical devices and systems. It begins with temperature- and photo-induced phase transition of ferromagnetic materials. Further topics include: energy transfer in artificial photosynthesis, homoepitaxial multiple quantum wells in ZnO, near-field photochemical etching and nanophotonic devices based on a nonadiabatic process and optical near-field energy transfer, respectively and polarization control in the optical near-field for optical information security. Taken as a whole, this overview will be a valuable resource for engineers and scientists working in the field of nano-electro-optics Near-Field Imaging of Magnetic Domains....Pages 1-41 Improvement of Interface Quality in Cleaved-Edge-Overgrowth GaAs Quantum Wires Based on Micro-optical Characterization....Pages 43-82 Recombination Dynamics in In x Ga 1TMx N-Based Nanostructures....Pages 83-125 Quantum Theory of Radiation in Optical Near Field Based on Quantization of Evanescent Electromagnetic Waves Using Detector Mode....Pages 127-199 1. Basics and theory of near-field optics 2. Novel devices and atom manipulation 3. Industrial applications and dynamics of the nano-optical system Characterization of nano-optical materials and optical near-field interactions 5. Nonophotonic fabrications, devices, systems and their theoretical bases The imaging of magnetic domains is of high technological interest for the characterization of data-storage media and nonvolatile memory devices, where domains carry the bit information [1].