Principles of Electronics

IARE_ECE_EDC NOTES.pdf Dr. P.Ashok Babu, Professor Mr. V R Seshagiri Rao, Professor Mr. K.Sudhakar Reddy, AssosciateProfessor (Autonomous) UNIT 1 INTRODUCTON EXTRINSICSEMICONDUCTOR: CONDUCTIVITY OFSEMICONDUCTOR: Conductivity in extrinsic sc (N Type and P Type): The energy band diagram of p-n junction under open circuitconditions 1.0..5 Doide current equation  1) QUANTITATIVE THEORY OF PN JUNCTIONDIODE: PN JUNCTION WITH NO APPLIED VOLTAGE OR OPENCIRCUIT CONDITION: 1.1.2 PN JUNCTION UNDER REVERSE BIAS CONDITION: V-I CHARACTERISTICS AND THEIRTEMPERATURE DEPENDENCE: IDEAL VERSUS PRACTICAL RESISTANCELEVELS DIODE EQUIVALENTCIRCUITS TRANSITION AND DIFFUSIONCAPACITANCE BREAK DOWNMECHANISMS Zener breakdown ZENERDIODES UNIT-II PRINCIPLE OF OPERATION AND CHARACTERISTICS OF TUNNELDIODE: Tunnelling Phenomenon: Forward bias operation Reverse bias operation Technical comparisons Energy band structure of tunnel diode: Applications for tunnel diodes: VARACTORDIODE: Applications: SCHOTTKYDIODE: Structure and principle of operation Flatband diagram and built-inpotential Energy band diagram of a metal-semiconductor contact in thermal equilibrium. Forward and reverse bias Characteristics of Schottky Diode: Applications: PRINCIPLE OF OPERATION OFSCR Fig : symbol of SCR Construction of SCR The switching action of gate takes place only when Merits of SCR Demerits of SCR Application of SCRs PHOTODIODE: Principle of operation: Characteristics of photodiode: Advantages: Disadvantages: Applications: Problems: . RECTIFIERS & FILTERS: INTRODUCTION Characteristics of a Rectifier Circuit: CLASSIFICATION OFRECTIFIERS: HALF-WAVERECTIFIER: i) AVERAGE VOLTAGE IV) RMSCURRENT Peak Factor = Peak Factor =2 vii) Ripple Factor: DISADVANTAGES OF HALF-WAVE RECTIFIER: FULL WAVERECTIFIER: i) AVERAGEVOLTAGE IV) RMSCURRENT vi) FORMFACTOR vii) Ripple Factor: xi) %Regulation BRIDGERECTIFIER. FILTERS CAPACITOR FILTER Capacitor filter is very popular because of its low cost, small size, light weight and good characteristics. L-SECTION FILTER: Π-SECTION FILTER: Capacitor-Input or Pi-Filter. SALIENT FEATURES OF L-SECTION AND PI-FILTERS. INTRODUCTION (1) CONSTRUCTION OF BJT AND ITSSYMBOLS IE = IB + IC Working of a p-n-p transistor: IE = IB + IC (1) Bipolar TransistorConfigurations COMMON-BASECONFIGURATION COMMON-EMITTERCONFIGURATION COMMON – COLLECTORCONFIGURATION Transistor as switch CLASSIFICATION OFFET: CONSTRUCTION AND OPERATION OF N- CHANNEL FET CONSTRUCTION OF N-CHANNEL JFET OPERATION OF N-CHANNEL JFET:- CHARACTERISTICS OF N-CHANNEL JFET:- JFETPARAMETERS MOSFET:- DEPLETION MOSFET E-MOSFETS CHARACTERISTICS OF E MOSFET:- 2. TRANSFER CHARACTERISTICS:- APPLICATION OFMOSFET COMPARISON OF MOSFET WITHJFET UNIJUNCTION TRANSISTOR(UJT): EQUIVALENT CIRCUIT OF UJT Intrinsic stand off ratio (η) Operation VI Characteristics UNIT IV NEED FOR TRANSISTORBIASING: fig1 AC LOADLINE: STABILITY FACTOR(S): Stability factor S’ and S’’: Merits: Demerits: 2) EMITTER-FEEDBACKBIAS: Merits: Demerits: 3) COLLECTOR TO BASE BIAS OR COLLECTOR FEED-BACK BIAS: Merits: Demerits: 4) COLLECTOR –EMITTER FEEDBACKBIAS: 5) VOLTAGE DIVIDER BIAS OR SELF BIAS OR EMITTERBIAS: Merits: Demerits: BIAS COMPENSATION USING DIODE ANDTRANSISTOR: THERMAL RUNAWAY AND THERMALSTABILITY: THERMAL RESISTANCE CONDITION FOR THERMALSTABILITY: SELFBIAS Id=Idss[1- ]2 Id=Idss[1-]2 VOLTAGE DIVIDERBIAS:- UNIT V 5..1Two –Port Devices and Network Parameters Small signal low frequency transistor Models: Fig. 1 z-parameters Y-parameters Hybrid parameters(h-parameters) output impedence with i/p port open circuited f =21 = forward transfer r = 12 = reverse transfer) Fig. 6 ANALYSIS OF A TRANSISTOR AMPLIFIER USING H- PARAMETERS: Fig. 1 Fig. 2 Inputimpedence: Voltagegain: OutputAdmittance: hybrid model for transistor in three different configurations Analysis of a Transistor amplifier circuit using h-parameters Current Gain or Current Amplification (Ai) Input Impedence (Zi) Voltage Gain or Voltage Gain Amplification Factor(Av) Output Admittance (Yo) Voltage Amplification Factor(Avs) taking into account the resistance (Rs) of the source Current Amplification (Ais) taking into account the sourse Resistance(RS) Operating Power Gain (AP) Small Signal analysis of a transistor amplifier Fig. 4 CE amplifier with an emitter resistor: Comparison of Transistor Amplifier Configuration Characteristics of Common Base Amplifier Characteristics of Common Collector Amplifier Characteristics of Common Emitter Amplifier Simplified common emitter hybrid model: Fig 1.8 CE amplifier with an emitter resistor: (1) Fig.1.9 Common Base Amplifier: Fig .3 Fig. 4 (1) Solution: Small Signal CE Amplifiers: Fig. 2 Fig. 3 Fig. 5 AC Load line: Fig. 1 Fig. 3 (1) Fig. 5 Solution: Common CollectorAmplifier: Fig. 7 Example - 2 CLASSIFICATION OF AMPLIFIERS: Distortion in amplifiers: Amplifier Distortion 5.4.0 INTRODUCTION Common Source (CS)Amplifier Voltage Gain Input Impedence Output Impedance Common DrainAmplifier Voltage Gain Input Impedence Output Impedence BIASINGFET:- 5.5.1. SELF BIAS:- Id=Idss[1- ]2 Id=Idss[1-]2 5.5.2 VOLTAGE DIVIDER BIAS:- 5.6 JFET AS A VVR OR VDR:- gd=gd0(1-)1/2)