Porous Silicon Carbide and Gallium Nitride : Epitaxy, Catalysis, and Biotechnology Applications

Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide-band-gap technology, and describes the underlying scientific basis for each application area. Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more Porous Silicon Carbide and Gallium Nitride......Page 4 Contents......Page 8 Preface......Page 14 1.1 Introduction......Page 18 1.2.1 Crystal Anodization......Page 19 1.2.2 Description of the Porous Structure......Page 20 1.2.3 Model of the Morphology......Page 26 1.3.1 Experimental......Page 32 1.3.2 Results......Page 33 1.3.3 Discussion......Page 35 1.4 Summary......Page 43 References......Page 44 2.1 Introduction......Page 48 2.2 Formation of Porous Layer......Page 49 2.3 Diffusion in Porous SiC......Page 59 2.4 Oxidation......Page 64 2.5 Contacts to Porous SiC......Page 66 References......Page 70 3.1 Introduction......Page 72 3.2 SiC CVD Growth......Page 74 3.3.1 Growth on Porous Si Substrates......Page 75 3.3.2 Growth on Stabilized Porous Si Substrates......Page 79 3.4.1 Growth in LPCVD Cold-wall Reactor......Page 81 3.5 Growth of 4H-SiC on Porous 4H-SiC......Page 84 3.6 Conclusion......Page 90 References......Page 91 4.1 Introduction......Page 94 4.2 Creation of Porous GaN by Electroless Etching......Page 95 4.3.1 Porous GaN Derived from Unintentionally Doped Films......Page 97 4.3.2 Transmission Electron Microscopy (TEM) Characterization......Page 101 4.4 Luminescence of Porous GaN......Page 102 4.4.1 Cathodoluminescence (CL) of Porous GaN......Page 103 4.4.2 Photoluminescence (PL) of Porous GaN......Page 105 4.5.1 Characteristics of Raman scattering in GaN......Page 106 4.5.2 Raman Spectra of Porous GaN Excited Below Band Gap......Page 108 References......Page 112 5.1 Introduction......Page 118 5.2.1 Porous Substrates......Page 121 5.2.2 Hydrogen Etching......Page 122 5.3.1 Experimental Details......Page 125 5.3.2 Film Structure......Page 127 5.3.3 Film Strain......Page 131 5.4 Summary......Page 133 References......Page 134 6.1 Introduction......Page 138 6.2 Epitaxy of GaN on Porous SiNx Network......Page 139 6.2.1 Three-step Growth Method......Page 140 6.2.2 Structural and Optical Characterization......Page 145 6.2.3 Schottky Diodes (SDs) on Undoped GaN Templates......Page 152 6.2.4 Deep Level Transition Spectrum......Page 155 6.3.1 Formation of Porous TiN......Page 157 6.3.2 Growth of GaN on Porous TiN......Page 159 6.3.4 Characterization by TEM......Page 163 6.3.5 Characterization by PL......Page 169 6.4 Growth of GaN on Porous SiC......Page 171 6.4.1 Fabrication of Porous SiC......Page 173 6.4.2 GaN Growth on Hydrogen Polished Porous SiC......Page 174 6.4.3 GaN Growth on Chemical Mechanical Polished Porous SiC......Page 181 References......Page 184 7.1 Introduction......Page 188 7.2 PSC Substrate Fabrication and Properties......Page 189 7.2.1 Formation of Various Types of SPSC Structure......Page 190 7.2.2 Dense Layer......Page 194 7.2.3 Monitoring of Anodization Process......Page 195 7.2.4 Vacancy Model of Primary Pore Formation......Page 200 7.2.5 Stability of SPSC Under Post-Anodization Treatment......Page 207 7.3.1 The Growth and Its Effect on the Structure of the PSC Substrate......Page 212 7.3.2 Properties of the GaN Films Grown......Page 215 7.4 Summary......Page 223 References......Page 224 8.1 Introduction......Page 230 8.2 Extended Defects in Epitaxially Grown GaN Thin Layers......Page 231 8.3 Dislocation Mechanisms in Conventional Lateral Epitaxy Overgrowth of GaN......Page 234 8.4 Growth of GaN on Porous SiC Substrates......Page 237 8.5 Growth of GaN on Porous SiN and TiN Interlayers......Page 239 8.5.1 GaN Growth on a TiN Interlayer......Page 240 8.5.2 GaN Growth on a SiN Interlayer......Page 241 8.6 Summary......Page 243 References......Page 244 9.1 Introduction......Page 248 9.2 Resistivity and Hall Effect......Page 249 9.3.1 Fundamentals of DLTS......Page 251 9.3.2 Method of Solving the General Equation......Page 253 9.4 Sample Considerations......Page 254 9.5 Potential Energy Near a Pore......Page 255 9.6 DLTS Data and Analysis......Page 257 References......Page 260 10.1 Introduction......Page 262 10.2 Mn-Doped GaN Crystal......Page 264 10.3 Mn-Doped GaN Thin Films......Page 265 10.3.1 Mn-Doped GaN (1120) Surface......Page 266 10.3.2 Mn-Doped GaN (1010) Surface......Page 269 10.3.3 Mn and C Codoped in GaN (1010) Surface......Page 274 10.4.1 Mn-Doped GaN Nanowires......Page 276 10.4.2 Cr-Doped GaN Nanotubes......Page 279 10.4.3 Cr-Doped GaN Nanohole Arrays......Page 282 10.5.1 Giant Magnetic Moments of MnxN Clusters......Page 285 10.5.2 N-induced Magnetic Transition in Small CrxN Clusters......Page 286 10.6 Summary......Page 287 References......Page 288 11.1 Introduction......Page 292 11.2 Silicon Carbide Support......Page 293 11.3 Heat Effects During Reaction......Page 294 11.4 Reactions on SiC as Catalytic Supports......Page 295 11.5.1 Pt/• -SiC Catalyst for Catalytic Combustion of Carbon Particles in Diesel Engines......Page 296 11.5.3 SiC-Supported MoO3-Carbon-Modified Catalyst for the n-Heptane Isomerization......Page 297 11.5.4 Selective Oxidation of H2S Over SiC-Supported Iron Catalysts into Elemental Sulfur......Page 298 11.5.5 Partial Oxidation of n-Butane to Maleic Anhydride Using SiC-Mixed and Pd-Modified Vanadyl Pyrophosphate (VPO) Catalysts (Case study)......Page 299 References......Page 305 12.1 The Rationale for Implantable Semi-Permeable Materials......Page 308 12.2 The Biology of Soluble Signaling Proteins in Tissue......Page 309 12.3 Measuring Cytokine Secretion In Living Tissues and Organs......Page 311 12.4 Creating a Biocompatible Tissue – Device Interface: Advantages of SiC......Page 312 12.5 The Testing of SiC Membranes for Permeability of Proteins......Page 313 12.6 Improving the Structure of SiC Membranes for Biosensor Interfaces......Page 316 12.7 Theoretical Considerations: Modeling Diffusion through a Porous Membrane......Page 318 12.7.1 Effective Medium Models for a Porous Membrane......Page 319 12.7.2 Comparison with Experiment......Page 321 12.8 Future Development: Marriage of Membrane and Microchip......Page 322 Acknowledgements......Page 324 References......Page 325 Index......Page 328 Color_Plate......Page 336

Like all semiconductors, silicon carbide (SiC) and gallium nitride (GaN) have an energy gap separating the electron energy levels that are normally filled with electrons from those that are normally empty of electrons. Both SiC and GaN have high bond strengths, making them suitable for high-temperature applications. Their wide band gaps also permit a number of novel applications for the materials, including blue and ultra-violet light-emitting devices as well as high-power and high-speed electronic devices. Porous layers of SiC or GaN can be formed by photo-electro-chemical etching, and these porous layers have unique properties and applications such as electronic/optical devices, fuel cells, catalytic sensors, and semipermeable membranes.

The book presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap, and the underlying scientific basis for each application area is described. The book starts with an overview of porous wide-band-gap technology. The coverage includes preparation, characterization, morphology and processing of porous SiC, growth of SiC, preparation and properties of porous GaN, growth of GaN, dislocation mechanism GaN films, electrical properties of porous SiC, magnetism of GaN nanostructures, SiC catalysis technology and nanoporous silicon carbide as a biomembrane for medical use.

This book gives both experts and nonexperts a good overview of porous semiconductors. The book is aimed at researchers intending to pursue work relating to porous wide-band-gap semiconductors in the manufacturing/semiconductor industry. It will also appeal to postgraduate students and researchers in materials science, engineering, chemistry, and nanotechnology.

6.3 Epitaxial Lateral Overgrowth of GaN on Porous TiN6.3.1 Formation of Porous TiN; 6.3.2 Growth of GaN on Porous TiN; 6.3.3 Characterization by XRD; 6.3.4 Characterization by TEM; 6.3.5 Characterization by PL; 6.4 Growth of GaN on Porous SiC; 6.4.1 Fabrication of Porous SiC; 6.4.2 GaN Growth on Hydrogen Polished Porous SiC; 6.4.3 GaN Growth on Chemical Mechanical Polished Porous SiC; Acknowledgements; References; 7 HVPE Growth of GaN on Porous SiC Substrates; 7.1 Introduction; 7.2 PSC Substrate Fabrication and Properties; 7.2.1 Formation of Various Types of SPSC Structure; 7.2.2 Dense Layer Porous Silicon Carbide and Gallium Nitride; Contents; Preface; 1 Porous SiC Preparation, Characterization and Morphology; 1.1 Introduction; 1.2 Triangular Porous Morphology in n-type 4H-SiC; 1.2.1 Crystal Anodization; 1.2.2 Description of the Porous Structure; 1.2.3 Model of the Morphology; 1.3 Nano-columnar Pore Formation in 6H-SiC; 1.3.1 Experimental; 1.3.2 Results; 1.3.3 Discussion; 1.4 Summary; Acknowledgements; References; 2 Processing Porous SiC: Diffusion, Oxidation, Contact Formation; 2.1 Introduction; 2.2 Formation of Porous Layer; 2.3 Diffusion in Porous SiC; 2.4 Oxidation 4.2 Creation of Porous GaN by Electroless Etching4.3 Morphology Characterization; 4.3.1 Porous GaN Derived from Unintentionally Doped Films; 4.3.2 Transmission Electron Microscopy (TEM) Characterization; 4.4 Luminescence of Porous GaN; 4.4.1 Cathodoluminescence (CL) of Porous GaN; 4.4.2 Photoluminescence (PL) of Porous GaN; 4.5 Raman Spectroscopy of Porous GaN; 4.5.1 Characteristics of Raman scattering in GaN; 4.5.2 Raman Spectra of Porous GaN Excited Below Band Gap; 4.6 Summary and Conclusions; Acknowledgements; References; 5 Growth of GaN on Porous SiC by Molecular Beam Epitaxy "The book presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap, and the underlying scientific basis for each application area is described." "This book gives both experts and nonexperts a good overview of porous semiconductors. The book is aimed at researchers intending to pursue work relating to porous wide-band-gap semiconductors in the manufacturing/semiconductor industry. It will also appeal to postgraduate students and researchers in materials science, engineering, chemistry, and nanotechnology."--Jacket 5.1 Introduction5.2 Morphology and Preparation of Porous SiC Substrates; 5.2.1 Porous Substrates; 5.2.2 Hydrogen Etching; 5.3 MBE Growth of GaN on Porous SiC Substrates; 5.3.1 Experimental Details; 5.3.2 Film Structure; 5.3.3 Film Strain; 5.4 Summary; Acknowledgements; References; 6 GaN Lateral Epitaxy Growth Using Porous SiNx, TiNx and SiC; 6.1 Introduction; 6.2 Epitaxy of GaN on Porous SiNx Network; 6.2.1 Three-step Growth Method; 6.2.2 Structural and Optical Characterization; 6.2.3 Schottky Diodes (SDs) on Undoped GaN Templates; 6.2.4 Deep Level Transition Spectrum Preface. 1. Porous SiC Preparation, Characterization and Morphology 1.1 Introduction 1.2 Triangular Porous Morphology in n-type 4H-SiC. 1.3 Nano-columnar Pore Formation in 6H SiC. 1.4 Summary. Acknowledgements. References. 2. Processing Porous SiC: Diffusion, Oxidation, Contact Formation. 2.1 Introduction. 2.2 Formation of Porous Layer. 2.3 Diffusion in Porous SiC. 2.4 Oxidation. 2.5 Contacts to Porous SiC. Acknowledgments. References. 3. Growth of SiC on Porous SiC Buffer Layers. 3.1 Introduction. 3.2 SiC CVD Growth. 3.3 Growth of 3C-SiC on porous Si via 2.5 Contacts to Porous SiCAcknowledgements; References; 3 Growth of SiC on Porous SiC Buffer Layers; 3.1 Introduction; 3.2 SiC CVD Growth; 3.3 Growth of 3C-SiC on Porous Si via Cold-Wall Epitaxy; 3.3.1 Growth on Porous Si Substrates; 3.3.2 Growth on Stabilized Porous Si Substrates; 3.4 Growth of 3C-SiC on Porous 3C-SiC; 3.4.1 Growth in LPCVD Cold-wall Reactor; 3.5 Growth of 4H-SiC on Porous 4H-SiC; 3.6 Conclusion; Acknowledgements; References; 4 Preparation and Properties of Porous GaN Fabricated by Metal-Assisted Electroless Etching; 4.1 Introduction Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference beginsÖ≠with an overview of porous wide-band-gap technology, and describes theÖ≠underlying scientific basis for each application area.Ö≠Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more

Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference beginswith an overview of porous wide-band-gap technology, and describes theunderlying scientific basis for each application area.Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more