Optical Absorption of Impurities and Defects in Semiconducting Crystals: Electronic Absorption of Deep Centres and Vibrational Spectra (Springer Series in Solid-State Sciences Book 169)

This book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by vibrational spectroscopy to determine the atomic structure and symmetry of complexes associated with light impurities like hydrogen, carbon, nitrogen and oxygen, and as a tool for quantitative analysis of these elements in the materials. Front Matter....Pages i-xxvii Introduction....Pages 1-41 Bulk Optical Absorption....Pages 43-88 Instrumental Methods for Absorption Spectroscopy in Solids....Pages 89-112 Absorption of Deep Centres and Bound Excitons....Pages 113-187 Vibrational Absorption of Substitutional Atoms and Related Centres....Pages 189-241 Vibrational Absorption of O and N Interstitial Atoms and Related Centres....Pages 243-324 Vibrational Absorption of Quasi-substitutional Atoms and Other Centres....Pages 325-367 Vibrational Absorption Associated with Hydrogen....Pages 369-463 Back Matter....Pages 465-510 This volume outlines how absorption spectroscopy is important to the investigation of deep-level centers introduced in semiconductors and insulators. It also explains how vibrational spectroscopy determines the atomic structure and symmetry of complexes.