Non-stoichiometry in semiconductors : proceedings of Symposium A3 on Non-Stoichiometry in Semiconductors of the International Conference on Advanced Materials - ICAM 91, Strasbourg, France, 27-31 May, 1991 : part of the EMRS 1991 Spring Meeting

Significant advances have occurred in the theory of non-stoichiometry problems and fundamentally new and wide-ranging applications have been developed, helping to better identify relevant issues. The contributions in this volume bring together the experience of specialists from different disciplines (materials scientists, physicists, chemists and device people) confronted with non-stoichiometry problems. The 40 papers, including 9 invited papers, give an advanced scenario of this wide interdisciplinary area, which is highly important in its diverse aspects of theory, implementation and applications. This work will be of interest not only to universities and laboratories engaged in studies and research in this field, but also to organizations and industrial centres concerned with implementations and applications. The diversity of the topics, as well as the extraordinary tempo in which Non-stoichiometry in Semiconductors has progressed in recent years attest to the permanent vitality of this field of research and development. Content: INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS -ICAM91- , Page ii Front Matter , Page iii Copyright , Page iv PREFACE , Pages v-vi SYMPOSIUM INFORMATION , Page vii Chemical composition and properties of semiconductors , Pages 3-14 , J. Vedel PRECISE COMPOSITIONAL AND TRACE—ELEMENTAL ANALYSIS BY CHEMICAL METHODS IN COMPOUND SEMICONDUCTORS , Pages 15-26 , M.H. Yang, M.L. Lee, H.L. Hwang Non-stoichiometry and aspects of heavy doping in GaAs revealed by X-ray quasi-forbidden reflection (XFR) method , Pages 27-38 , Isao Fujimoto CRYSTAL QUALITY CONTROL BY MEANS OF THE COMBINED USE OF X-RAY DIFFRACTION AND ULTRASOUND , Pages 39-44 , E. Zolotoyabko A MODEL FOR THE PHASE EXTENT OF GALLIUM ARSENIDE DERIVED FROM EXPERIMENTAL DOPANT SOLUBILITY DATA , Pages 47-57 , D T J Hurle Characterization of CuInS 2 by perturbed angular correlations of γ rays , Pages 59-61 , M. Brüssler, H. Metzner, K.D. Husemann, H.J. Lewerenz Heat-treatment of AgGaS 2 single crystals in sulfur atmosphere , Pages 63-68 , Y. Noda, T. Kurasawa, H. Watanabe, Y. Furukawa, K. Masumoto Defect structure of the nonstoichiometric Cu-I-III-VI 2 chalcopyrite semiconductors , Pages 69-79 , H.Y. Ueng, H.L. Wang INFLUENCE OF ANNEALING METHOD ON ELECTRICAL PROPERTIES OF Hg 1-x Cd x Te , Pages 81-86 , E. Belas, P. Höschl, P. Moravec, J. Franc Defect Chemistry and Electrical Properties of Iron-pyrite (FeS 2–x ) , Pages 87-92 , S. Fiechter, A. Hartmann, P. Dulski, D. Jokisch, H. Tributsch Stoichiometry control of compound semiconductor crystals , Pages 95-106 , Jun-ichi Nishizawa Modified LEC technique for growing high quality III-V Semiconductors , Pages 107-118 , M. Tatsumi, T. Kawase, K. Tada Crystals of CuInSe 2 with Controlled Deviations from Stoichiometry , Pages 119-124 , L.S. Yip, W.S. Weng, Z.A. Shukri, I. Shih, C.H. Champness CuInS 2 grown under elevated pressures; Part 1: Structural and defect characterization , Pages 125-131 , M.L. Fearheiley, N. Dietz, S. Schroetter, H.J. Lewerenz CuInS 2 grown under elevated pressures, Part 2: Optical defect characterization , Pages 133-140 , N. Dietz, M.L. Fearheiley, H.J. Lewerenz Stoichiometry Issues in Gallium Nitride and Other Wide Gap Semiconductors , Pages 143-153 , Jacques I. Pankove QUANTITATIVE APPROACH OF NON-STOICHIOMETRIC INTERFACES FOLLOWING A GROWTH INTERRUPTION SEQUENCE: APPLICATION TO LATTICE-MATCHED InGaAs/InP QUANTUM WELLS , Pages 155-160 , S. JUILLAGUET, J.P. LAURENTI, R. SCHWEDLER, K. WOLTER, J. CAMASSEL, H. KURZ Optical characterization of strained InGaAs/InP quantum well structures , Pages 161-166 , R. Schwedler, B. Gallmann, K. Wolter, Ch. Jaekel, H. Kurz, M. Stollenwerk, J. Camassel, J.P. Laurenti, S. Juillaguet Influence of the InP-substrate temperature on the properties of MBE grown Al 0.48 In 0.52 As layers , Pages 167-172 , Eric Tournié, Yong-Hang Zhang, Klaus Ploog A Multi-Mode Capped-Mesa-Buried-Heterostructure Laser Diode (MM-CMBH) With A Reduced Contact and Etched Trench , Pages 173-178 , G.C. Chi GROWTH MECHANISMS AND STOICHIOMETRIC PROPERTIES OF GaSb COMPOUNDS GROWN BY MOCVD , Pages 179-184 , Y.K. Su, S.M. Chen, H.Y. Ueng, F.S. Juang MICROSTRUCTURE OF SrF 2 EPITAXIAL LAYER ON InP SEMICONDUCTOR AND OF THEIR INTERFACE , Pages 185-190 , Pham V. Huong, E. Ollier, S. Delavoye, R. Cavagnat, B. Mombelli, A.S. Barrière, A.L. Verma ODMR of stoichiometry defects in III-V semiconductors , Pages 193-204 , J.-M. Spaeth, M. Fockele, K. Krambrock Photoluminescence and Transport Investigations in CdTe , Pages 205-210 , W. Stadler, F. Wang, R. Schwarz, K. Oettinger, B.K. Meyer, D.M. Hofmann, D. Sinerius, K.W. Benz EFFECT OF NON-STOICHIOMETRY ON NEAR-BANDEDGE ABSORPTION AND NON-RADIATIVE RECOMBINATION IN BULK GaAs , Pages 211-216 , S. Tüzemen, M.R. Brozel Direct observation of the electrical activity of the EL2 center in its metastable configuration in Ga 1-x Al x As alloys , Pages 217-222 , G. Brémond, G. Guillot, D. Stievenard, R. Azoulay Influence of melt stoichiometry on deep hole traps in n-type LEC Gallium Arsenide , Pages 223-228 , G. Marrakchi, A. Kalboussi, G. Guillot, S. Alaya, H. Maaref, R. Fornari Chemical shift of DX centers in Ga(As 1-x P x ) , Pages 229-236 , J.M Sallese, D.K Maude, M.L Fille, U Willke, J.C Portal, P Gibart Post-implantation defects and non-stoichiometry of I-implanted ZnSe , Pages 237-242 , A. Olszewski, J. Krynicki, H. Rzewuski, R. Groetzschel Photoluminescence of GaAs 1-x P x , Pages 243-248 , M.S. Feng, H.L. Hsiao, H.L. Hwang PHOTOLUMINESCENCE STUDY OF CdTe:Sm CRYSTALS , Pages 249-253 , P. HAN, W. SHAN, T. ZHOU, K.J. MA, S.C. SHEN Stoichiometric effects on the properties of Cu based chalcopyrite I-III-VI 2 semiconductor thin films , Pages 257-268 , Joseph J. Loferski P-d hybridization of sulfur annealed copper indium disulfide , Pages 269-274 , T.M. Hsu, H.L. Hwang Chemical and structural characterization of thin films of CuInSe 2 , Pages 275-280 , B.H. Tseng, C.A. Wert DLTS investigation of the defect chemistry of non-stoichiometric CuInSe 2 , Pages 281-286 , H.J. Möller, E. Rodak Deep levels in monocrystalline CuInSe 2 , Pages 287-292 , L. Li, I. Shih OXIDE IDENTIFICATION BY PHOTOLUMINESCENCE , Pages 295-300 , B. LEFEZ, M. LENGLET Correlations between structure and electrical properties of tin-doped indium oxide thin films: an EXAFS investigation , Pages 301-306 , Ph. Parent, H. Dexpert, G. Tburillon, J.-M. Grimal Oxygen Non-Stoichiometry in Thermally Annealed and Hydrogen Implanted TiO 2 Thin Films Observed by Raman Spectroscopy , Pages 307-313 , A. Turković, M. Ivanda, J. Tudorić-Ghemo, N. Godinović, I. Sorić Electrical properties of doped and nonstoichiometric SnO 2-δ and its stoichiometry control by co-firing with Sn 2– a 2+ M 2- b Sn b 4+ O 7- a-b /2 (M = Ta, Nb) , Pages 315-320 , G. Behr, G. Krabbes, U. Wiesner, W. Bieger, J. Werner AUTHOR INDEX , Pages 321-322