Narrow Gap Semiconductors 2007: Proceedings Of The 13th International Conference, 8-12 July, 2007, Guildford, Uk (springer Proceedings In Physics)

Narrow gap semiconductors have provided an exciting field of research and show a number of extreme physical and material characteristics. They are the established material systems for infrared detectors and emitters, and with new developments in the technology these materials are emerging as a viable route to high speed, low power electronics. New kinds of narrow gap semiconductor, such as graphene and other composite nanocrystals, are also providing renewed interest in the underlying physics. The Thirteenth International Conference on Narrow Gap Semiconductors (NGS-13) was held at the University of Surrey, Guildford, UK in July 2007. The conference brought together experts and young scientists to discuss the latest findings and developments in the field. This book contains the invited and contributed papers which were presented at this meeting and serves to provide a broad overview of the current worldwide activities in narrow gap semiconductor research. The subjects covered are theoretical and material physics of narrow gap semiconductors and quantum heterostructures, spin related phenomenon including carrier dynamics and magnetotransport, carbon nanotubes and graphene as novel narrow gap material, as well as device physics including transistors, mid and far-infrared lasers and detectors. Front Matter....Pages i-xvi Gate Dependence of Spin-Splitting in an InSb/InAlSb Quantum Well....Pages 3-5 Photogalvanic Effects in HgTe Quantum Wells....Pages 7-9 Magnetic and Structural Properties of Ferromagnetic GeMnTe Layers....Pages 11-14 Control and Probe of Carrier and Spin Relaxations in InSb Based Structures....Pages 15-18 Density and Well-Width Dependence of the Spin Relaxation in n-InSb/AlInSb Quantum Wells....Pages 19-21 Dependence of Layer Thickness on Magnetism and Electrical Conduction in Ferromagnetic (In,Mn)As/GaSb Heterostructures....Pages 23-26 Temperature Dependence of the Electron Lande g-Factor in InSb....Pages 27-29 Anomalous Spin Splitting of Electrons in InSb Type-II Quantum Dots in an InAs Matrix....Pages 31-33 Measurement of the Dresselhaus and Rashba Spin-Orbit Coupling Via Weak Anti-Localization in InSb Quantum Wells....Pages 35-38 Picosecond Carrier Dynamics in Narrow-Gap Semiconductors studied by Terahertz Radiation Pulses....Pages 41-43 Band Structure of InSbN and GaSbN....Pages 45-47 Growth and Characterisation of Dilute Antimonide Nitride Materials for Long Wavelength Applications....Pages 49-51 Electron Interband Breakdown in a Kane Semiconductor with a Degenerate Hole Distribution....Pages 53-56 InMnAs Quantum Dots: A Raman Spectroscopy Analysis....Pages 57-60 Conduction Band States in AlP/GaP Quantum Wells....Pages 61-63 Growth of InAsSb Quantum Wells by Liquid Phase Epitaxy....Pages 65-68 Diode Lasers for Free Space Optical Communications Based on InAsSb/InAsSbP Grown by LPE....Pages 69-72 Epitaxial Growth and Characterization of PbGeEuTe Layers....Pages 73-75 Monte Carlo Simulation of Electron Transport in PbTe....Pages 77-79 L -Band-Related Interband Transition in InSb/GaSb Self-Assembled Quantum Dots....Pages 81-83 Antimony Distribution in the InSb/InAs QD Heterostructures....Pages 85-87 Transport Properties of InAs 0.1 Sb 0.9 Thin Films Sandwiched by Al 0.1 In 0.9 Sb Layers Grown on GaAs(100) Substrates by Molecular Beam Epitaxy....Pages 89-92 Modelling of Photon Absorption and Carrier Dynamics in HgCdTe under mid-IR Laser Irradiation....Pages 93-95 Monte Carlo Study of Transport Properties of InN....Pages 97-100 New Type of Combined Resonance in p-PbTe....Pages 101-103 Theory of Third-Order Optical Susceptibility of Single-Wall Carbon Nanotubes With Account of Coulomb Interaction....Pages 107-109 Unveiling the Magnetically Induced Field-Effect in Carbon Nanotubes Devices....Pages 111-113 Transient Zitterbewegung of Electrons in Graphene and Carbon Nanotubes....Pages 115-117 Cross-Polarized Exciton Absorption in Semiconducting Carbon Nanotubes....Pages 119-121 Self-Assembled InSb/InAs Quantum Dots for the Mid-Infrared Spectral Range 3–4 μm....Pages 125-127 InSb/InAs Nanostructures Grown by Molecular Beam Epitaxy Using Sb 2 and As 2 Fluxes....Pages 129-131 Performance Evaluation of Conventional Sb-based Multiquantum Well Lasers operating above 3μm at Room Temperature....Pages 135-138 Electroluminescence From Electrically Pumped GaSb-Based VCSELs....Pages 139-141 Wavelength Tunable Resonant Cavity Enhanced Photodetectors Based on Lead-Salts Grown by MBE....Pages 143-146 Farfield Measurements of Y-Coupled Quantum Cascade Lasers....Pages 147-149 Impact of Doping Density in Short-Wavelength InP-Based Strain-Compensated Quantum-Cascade Lasers....Pages 151-153 Magnetic Field Effects in InSb/Al x In 1−x Sb Quantum-Well Light-Emitting Diodes....Pages 155-157 Electroluminescence From InSb-Based Mid-Infrared Quantum Well Lasers....Pages 159-161 InAs Quantum Hot Electron Transistor....Pages 163-165 Easy-to-Use Scalable Antennas for Coherent Detection of THz Radiation....Pages 167-169 Single Photon Detection in the Long Wave Infrared....Pages 171-176 High-Performance Fabry-Perot and Distributed-Feedback Interband Cascade Lasers....Pages 177-182 Mid-Infrared Lead-Salt VECSEL (Vertical External Cavity Surface Emitting Laser) for Spectroscopy....Pages 183-186 Optically Pumped GaSb-Based VECSELs....Pages 187-192 Cyclotron Resonance Photoconductivity of a Two-Dimensional Electron Gas in HgTe Quantum Wells....Pages 195-198 Extrinsic Electrons and Carrier Accumulation in Al x In 1−x Sb/InSb Quantum Wells: Well-Width Dependence....Pages 199-201 Negative and Positive Magnetoresistance in Variable-Range Hopping Regime of Undoped Al x In 1−x Sb/InSb Quantum Wells....Pages 203-207 Semimetal-Insulator Transition in Two-Dimensional System at the Type II Broken-Gap InAs/GalnAsSb Single Heterointerface....Pages 209-211 Magnetoexcitons in Strained InSb Quantum Wells....Pages 213-215 Back Matter....Pages 216-216