Microscopy of semiconducting materials 2003 : proceedings of the Institute of Physics Conference [on Microscopy of Semiconducting Materials], Cambridge University, 31 March - 3 April 2003 ; MSM XIII

Modern electronic devices rely on ever-greater miniaturization of components, and semiconductor processing is approaching the domain of nanotechnology. Studies of devices in this regime can only be carried out with the most advanced forms of microscopy. Accordingly, Microscopy of Semiconducting Materials focuses on international developments in semiconductor studies carried out by all forms of microscopy. It provides an overview of the latest instrumentation, analysis techniques, and state-of-the-art advances in semiconducting materials science for solid state physicists, chemists, and material scientists. Content: PrefaceHigh Resolution Microscopy and MicroanalysisSelf-Organised and Quantum Domain StructuresEpitaxy - Growth PhenomenaEpitaxy - Wide Band-Gap NitridesProcessed Silicon and Other Device MaterialsMetalliztion, Silicides and ContactsDevice StudiesScanning Electron and Ion AdvancesScanning Probe MicroscopyIndices Focuses on international developments in semiconductor studies carried out by various forms of microscopy. This work provides an overview of the instrumentation, analysis techniques, and advances in semiconducting materials science. It is suitable for solid state physicists, chemists, and material scientists.