Laser Annealing Processes in Semiconductor Technology: Theory, Modeling and Applications in Nanoelectronics (Woodhead Publishing Series in Electronic and Optical Materials)

Laser Annealing Processes in Semiconductor Technology: Theory, Modeling and Applications in Nanoelectronics synthesizes the scientific and technological advances of laser annealing processes for current and emerging nanotechnologies. The book provides an overview of the laser-matter interactions of materials and recent advances in modeling of laser-related phenomena, with the bulk of the book focusing on current and emerging (beyond-CMOS) applications. Reviewed applications include laser annealing of CMOS, group IV semiconductors, superconducting materials, photonic materials, 2D materials. This comprehensive book is ideal for post-graduate students, new entrants, and experienced researchers in academia, research and development in materials science, physics and engineering. Introduces the fundamentals of laser materials and device fabrication methods, including laser-matter interactions and laser-related phenomena Addresses advances in physical modeling and in predictive simulations of laser annealing processes such as atomistic modeling and TCAD simulations Reviews current and emerging applications of laser annealing processes such as CMOS technology and group IV semiconductors Intro -- Laser Annealing Processes in Semiconductor Technology: Theory, Modeling, and Applications in Nanoelectronics -- Copyright -- Contents -- Contributors -- Preface -- Chapter 1: Historical evolution of pulsed laser annealing for semiconductor processing -- 1.1. Section 1: Introduction -- 1.2. Section 2: Excimer laser technology -- 1.2.1. Characteristics of the beam emitted by excimer lasers -- 1.2.2. Parameters that are relevant for the light-material interaction -- 1.2.3. Optics that can be used to shape the beam and prepare it for industrial applications -- 1.3. Section 3: Excimer laser annealing for low-temperature polycrystalline silicon technology -- 1.3.1. Excimer Laser process engineering -- 1.3.1.1. Trailing-/leading-edge scanning mode -- 1.3.1.2. Sequential lateral solidification -- 1.3.1.3. Two-pass excimer Laser process -- 1.3.1.4. Phase-modulated excimer laser annealing -- 1.3.1.5. Micro-Czochralski technique -- 1.3.2. Excimer laser-crystallized thin-film transistors -- 1.4. Section 4: Excimer laser annealing in MOS technology -- 1.4.1. Logic applications -- 1.4.2. Power MOS and RF/microwave applications -- 1.5. Conclusions -- References -- Chapter 2: Laser-matter interactions -- 2.1. Introduction -- 2.2. Absorption of electromagnetic radiation -- 2.3. Thermal effects of laser radiation -- 2.4. Differences across the electromagnetic spectrum -- 2.5. Diffusion model extension to millisecond regime -- 2.5.1. Thermal interaction -- 2.5.2. Diffusion simulation and activation kinetics -- 2.6. Concluding remarks -- References -- Chapter 3: Atomistic modeling of laser-related phenomena -- 3.1. Introduction -- 3.2. Atomistic simulation techniques -- 3.2.1. Ab initio -- 3.2.2. Tight binding -- 3.2.3. Classical molecular dynamics -- 3.2.4. Kinetic Monte Carlo -- 3.2.5. Multiscale modeling.