Ion Implantation Techniques : Lectures Given at the Ion Implantation School in Connection with Fourth International Conference on Ion Implantation: Equipment and Techniques Berchtesgaden, Fed. Rep. Of Germany, September 13–15, 1982
معرفی کتاب «Ion Implantation Techniques : Lectures Given at the Ion Implantation School in Connection with Fourth International Conference on Ion Implantation: Equipment and Techniques Berchtesgaden, Fed. Rep. Of Germany, September 13–15, 1982» نوشتهٔ Hans Glawischnig (auth.), Dr. Heiner Ryssel, Dr. Hans Glawischnig (eds.)، منتشرشده توسط نشر Springer-Verlag Berlin Heidelberg در سال 1982. این کتاب در 3 صفحه، فرمت pdf، زبان انگلیسی ارائه شده است.
In recent years, ion implantation has developed into the major doping technique for integrated circuits. Several series of conferences have dealt with the application of ion implantation to semiconductors and other materials (Thousand Oaks 1970, Garmisch-Partenkirchen 1971, Osaka 1974, Warwick 1975, Boulder 1976, Budapest 1978, and Albany 1980). Another series of conferences was devoted more to implantation equipment and tech niques (Salford 1977, Trento 1978, and Kingston 1980). In connection with the Third International Conference on Ion Implantation: Equipment and Tech niques, held at Queen's University, ' Kingston, Ontario, Canada, July 8-11, 1980, a two-day instructional program was organized parallel to an implan tation conference for the first time. This implantation school concentra ted on aspects of implantation-equipment design. This book contains all lectures presented at the International Ion Implantation School organized in connection with the Fourth International Conference on Ion Implantation: Equipment and Techniques, held at the Convention Center, Berchtesgaden, Germany, September 13-17, 1982. In con trast to the first .school, the main emphasis in thiS school was placed on practical aspects of implanter operation and application. In three chap ters, various machine aspects of ion implantation (general concepts, ion sources, safety, calibration, dOSimetry), range distributions (stopping power, range profiles), and measuring techniques (electrical and nonelec tri ca 1 measu ri ng techni ques, annea 1 i ng) are di scussed. In the appendi x, a review of the state of the art in modern implantation equipment is given Front Matter....Pages I-XII Front Matter....Pages 1-1 Ion Implantation System Concepts....Pages 3-21 Ion Sources....Pages 23-71 Faraday Cup Designs for Ion Implantation....Pages 73-103 Safety and Ion Implanters....Pages 105-120 Front Matter....Pages 121-121 The Stopping and Range of Ions in Solids....Pages 122-156 The Calculation of Ion Ranges in Solids with Analytic Solutions....Pages 157-176 Range Distributions....Pages 177-205 Front Matter....Pages 207-207 Electrical Measuring Techniques....Pages 209-234 Wafer Mapping Techniques for Characterization of Ion Implantation Processing....Pages 235-253 Non-Electrical Measuring Techniques....Pages 255-297 Annealing and Residual Damage....Pages 299-316 Front Matter....Pages 317-317 Evolution and Performance of the Nova NV-ID PredepTM Implanter....Pages 319-342 Ion Implantation Equipment from Veeco....Pages 343-350 The Series IIIA and IIIX Ion Implanters....Pages 351-358 Standard High-Voltage Power Supplies for Ion Implantation....Pages 359-360 The IONMICROPROBE A-DIDA 3000-30 for Dopant Depth Profiling and Impurity Bulk Analysis....Pages 361-366 Back Matter....Pages 367-372
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