Ion implantation in semiconductors and other materials [proceedings

During the years since the first conference in this series was held at Thousand Oaks, California, in 1970, ion implantation has been an expanding and exciting research area. The advances in this field were so rapid that a second conference convened at Garmisch­ Partenkirchen, Germany, in 1971. At the present time, our under­ standing of the ion implantation process in semiconductors such as Si and Ge has reached a stage of maturity and ion implantation techniques are firmly established in semiconductor device technology. The advances in compound semiconductors have not been as rapid. There has also been a shift in emphasis in ion implanta­ tion research from semiconductors to other materials such as metals and insulators. It was appropriate to increase the scope of the conference and the IIIrd International Conference on Ion Implanta­ tion in Semiconductors and Other Materials was held at Yorktown Heights, New York, December 11 to 14, 1972. A significant number of the papers presented at this conference dealt with ion implanta­ tion in metals, insulators, and compound semiconductors. The International Committee responsible for organizing this conference consisted of B. L. Crowder, J. A. Davies, F. H. Eisen, Ph. Glotin, T. Itoh, A. U. MacRae, J. W. Mayer, G. Dearnaley, and I. Ruge. The Conference attracted 180 participants from twelve countries. The success of the Conference was due in large measure to the financial support of our sponsors, Air Force Cambridge Research Laboratories and the Office of Naval Research. Front Matter....Pages i-xii Front Matter....Pages 1-1 Radiation Damage in Metals and Semiconductors....Pages 3-16 Ionization Effects in Self-Interstitial Migration and Implant Damage Annealing in Silicon....Pages 17-17 Internal Friction Study of Point Defects in Boron-Implanted Silicon....Pages 19-30 Strain Induced Effects on EPR Centers in Silicon Generated By P + Ion Implantation....Pages 31-38 Calorimetric Determination of Optical Absorption in Proton-Bombarded GaAs....Pages 39-48 Defect Aggregation in Ion-Implanted GaAs....Pages 49-58 On Silicon Amorphisation During Different Mass Ions Implantation....Pages 59-71 Front Matter....Pages 73-73 The Depth Distribution of Phosphorus Ions Implanted into Silicon Crystals....Pages 75-85 Arsenic Implanted and Implanted-Diffused Profiles in Silicon Using Secondary Ion Emission and Differential Resistance....Pages 87-98 The Effect of Ion Implantation on the Lattice Location of Arsenic in Arsenic — Doped Si....Pages 99-110 Concentration Profiles of Arsenic Implanted in Silicon....Pages 111-118 Energy Dependence and Annealing Behaviour of Boron Range Distributions in Silicon....Pages 119-131 Experimental Analysis of Concentration Profiles of Boron Implanted in Silicon....Pages 133-145 Channeling Analysis and Electrical Behavior of Boron Implanted Silicon....Pages 147-157 Si-SiO 2 Interface States Induced by Implantation of Various Ion Species....Pages 159-168 Front Matter....Pages 169-169 Theory of the Spatial Distributions of Ion Range and Energy Deposition....Pages 171-192 Theoretical and Experimental Studies on Lateral Spread of Implanted Ions....Pages 193-202 Determination of the Critical Dose for Different Mass Ions Implanted into Silicon....Pages 203-214 Boron Doping Profiles and Annealing Behavior of Amorphous Implanted Silicon Layers....Pages 215-224 Ranges and Distributions of Ions Implanted in Dielectrics....Pages 225-241 Front Matter....Pages 169-169 Computation of Third Central Moments for Projected Range Distributions of Common Ion-Implanted Dopants in Silicon....Pages 243-253 Front Matter....Pages 255-255 The Influence of the Amorphous Phase on Boron Atom Distributions in Ion Implanted Silicon....Pages 257-266 The Application of Ion Implantation to the Study of Diffusion of Boron in Silicon....Pages 267-274 The Isothermal Annealing of Defects Created in Phosphorus Ion Doped Silicon by Additional Bombardment with Phosphorus Ions....Pages 275-284 Physical Profile Measurements in Insulating Layers Using the Ion Analyser....Pages 285-294 Lattice Location of Low-Z Impurities in Medium-Z Targets Using Ion-Induced X-Rays....Pages 295-303 Ion Implantation Damage Gettering and Phosphorus Diffusion Gettering of Cu and Au in Silicon....Pages 305-315 The Diffusion of Cu Through Si and Gettering at Ion Damaged Surface Layers in the Presence of O....Pages 317-329 Front Matter....Pages 331-331 Photoluminescence, Optical Absorption, and Cathodoluminescence in Ion Implanted CdS....Pages 333-351 Annealing Studies of Broad-Band Luminescence from Ion-Implanted ZnSe....Pages 353-362 Thermoluminescence and Related Experiments on Br-Implanted ZnS Single Crystals....Pages 363-372 Lattice Disorder in Br, Cl, and F Implanted CdS — Channeling Study....Pages 373-383 Lattice Disorder in Br, Cl, and F Implanted CdS — Optical Reflection Study....Pages 385-394 Electroluminescence and Photoluminescence of N + Implanted CdS....Pages 395-401 Front Matter....Pages 403-403 The Influence of Ion Implantation Upon the High Temperature Oxidation of Titanium and Stainless Steel....Pages 405-414 The Effects of Yttrium Ion Implantation Upon the Oxidation Behaviour of an Austenitic Stainless Steel....Pages 415-422 Frictional Changes Induced by the Ion Implantation of Steel....Pages 423-436 Possible Radiation Enhanced Diffusion of Nickel Ions in Titanium....Pages 437-442 The Influence of Ion Bombardment on the Corrosion of Metals....Pages 443-453 Implantation and Diffusion of Cu in Be....Pages 455-464 Front Matter....Pages 403-403 Ion Implantation and Radiation Damage in Vanadium....Pages 465-476 An Exacting Test of the Channeling Technique for Atom Location: Br Implanted into Fe....Pages 477-490 The Lattice Site Location of C Implanted into Fe....Pages 491-502 Front Matter....Pages 503-503 Ion Implantation Effects in Magnetic Bubble Garnets....Pages 505-522 Nucleation and Crystallization of Ion-Implanted Glass....Pages 523-530 Lateral Stress Measurements in Ion-Implanted Metals and Insulators....Pages 531-540 Changes in the Electrical Properties of Thin Anodic TiO 2 Films Induced by Ion Implantation....Pages 541-550 Electrical and Structural Changes in Ion-Bombarded TiO 2 ....Pages 551-566 Ion Implantation in Silver Bromide....Pages 567-574 Refractive Index Profiles Produced in Silica Glass by Ion Implantations....Pages 575-584 Ion Implanted Silicon-Metal Systems Si 1-x M x ....Pages 585-596 Front Matter....Pages 597-597 Damage Profiles in Ion-Implanted Semiconductors at Low (25°K) Temperatures....Pages 599-609 Lattice Disorder Produced in GaAs by Cadmium Implantation....Pages 611-619 Compensation of GaAs by Oxygen Implantation....Pages 621-630 Properties of Tellurium Implanted Gallium Arsenide....Pages 631-640 Vaporization of Ion-Implanted GaAs....Pages 641-654 Back Matter....Pages 655-657 During the years since the first conference in this series was held at Thousand Oaks, California, in 1970, ion implantation has been an expanding and exciting research area. The advances in this field were so rapid that a second conference convened at GarmischƯ Partenkirchen, Germany, in 1971. At the present time, our underƯ standing of the ion implantation process in semiconductors such as Si and Ge has reached a stage of maturity and ion implantation techniques are firmly established in semiconductor device technology. The advances in compound semiconductors have not been as rapid. There has also been a shift in emphasis in ion implantaƯ tion research from semiconductors to other materials such as metals and insulators. It was appropriate to increase the scope of the conference and the IIIrd International Conference on Ion ImplantaƯ tion in Semiconductors and Other Materials was held at Yorktown Heights, New York, December 11 to 14, 1972. A significant number of the papers presented at this conference dealt with ion implantaƯ tion in metals, insulators, and compound semiconductors. The International Committee responsible for organizing this conference consisted of B.L. Crowder, J.A. Davies, F.H. Eisen, Ph. Glotin, T. Itoh, A.U. MacRae, J.W. Mayer, G. Dearnaley, and I. Ruge. The Conference attracted 180 participants from twelve countries. The success of the Conference was due in large measure to the financial support of our sponsors, Air Force Cambridge Research Laboratories and the Office of Naval Research