Ion Implantation and Synthesis of Materials (Springer Series in Materials Science Book 80)

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification topics, such as ion-beam mixing, stresses, and sputtering, are also described. TOC:General Features and Fundamental Concepts.- Particle Interactions and Interatomic Potentials.- Dynamics of Binary Elastic Collisions.- Ion-Solid Scattering Events: Cross-Section.- Collisions with Atoms and Electrons: Ion Stopping.- Ion Range and Range Distributions.- Displacements during Implantation: Radiation Damage.- Influence of Crystal Structure on Range: Channeling.- Doping, Diffusion and Defects in Ion Implanted Si.- Amorphous SE Thermal Regrowth, Ion Induced Epitaxy and Laser Annealing.- S1 Slicing and Layer Transfer: Ion-Cut.- Surface Erosion during Implantation: Sputtering.- Ion Induced Atomic Intermixing at the Interface: Ion Beam Mixing.- Ion Implantation Technology Front Matter....Pages i-xiii General Features and Fundamental Concepts....Pages 1-10 Particle Interactions....Pages 11-21 Dynamics of Binary Elastic Collisions....Pages 23-36 Cross-Section....Pages 37-48 Ion Stopping....Pages 49-61 Ion Range and Range Distribution....Pages 63-76 Displacements and Radiation Damage....Pages 77-92 Channeling....Pages 93-106 Doping, Diffusion and Defects in Ion-Implanted Si....Pages 107-126 Crystallization and Regrowth of Amorphous Si....Pages 127-142 Si Slicing and Layer Transfer: Ion-Cut....Pages 143-158 Surface Erosion During Implantation: Sputtering....Pages 159-178 Ion-Induced Atomic Intermixing at the Interface: Ion Beam Mixing....Pages 179-192 Application of Ion Implantation Techniques in CMOS Fabrication....Pages 193-211 Ion implantation in CMOS Technology: Machine Challenges....Pages 213-238 Back Matter....Pages 239-263 Ion beam processing of materials results from the introduction of atoms into the surface layer of a solid substrate by bombardment of the solid with ions in the electron-volt to mega-electron-volt energy range. By Michael Nastasi, James W. Mayer.