Insulating Films on Semiconductors : Proceedings of the Second International Conference, INFOS 81, Erlangen, Fed. Rep. Of Germany, April 27–29, 1981

The INFOS 81 Conference on Insulating Films on Semiconductors was held at the University of Erlangen-NUrnberg in Erlangen from 27 to 29 April 1981. This conference was a sequel to the first conference INFOS 79 held in Durham. INFOS 81 attracted 170 participants from universities, research institutes and industry. Attendants were registered from 15 nations. The biannual topical conference series will be continued by INFOS 83 to be held in Eindhoven, The Netherlands, in April 1983. The conference proceedings include all the invited (Y) and contrlDUtea (42) papers presented at the meeting. The topics range from the basic physical understanding of the properties of insulating films and their interface to semiconductors to the discussion of stability and dielectric strength as well as growing and deposition techniques which are relevant for technical applications. Strong emphasis was given to the semiconductor silicon and its native oxide; however, sessions on compound semiconductors and other insulating films also raised strong interest. The proceedings survey the present state of our understanding of the system of insulating films on semiconductors. As a new aspect of the topic, the properties of semiconductors deposited and laser processed on insulating films was in­ cluded for the first time. Front Matter....Pages I-X Front Matter....Pages 1-1 Electronic Structure of the Si-SiO 2 Interface....Pages 2-18 Morphology of the Si-SiO 2 Interface....Pages 19-25 Influence of Oxidation Parameters on Atomic Roughness at the Si-SiO 2 Interface....Pages 26-29 Electronic and Optical Properties of SiO x ....Pages 30-34 Hydrogenation of Defects at the Si-SiO 2 Interface....Pages 35-38 Stress Behaviour of Hydrogen Annealed Interface States....Pages 39-42 On the Si/SiO 2 Interface Recombination Velocity....Pages 43-47 Optical Excitation of MOS-Interface-States....Pages 48-53 Front Matter....Pages 55-55 Langmuir-Blodgett Films on Semiconductors....Pages 56-67 A Study of MIS Structures Prepared Under Ultra-High-Vacuum Conditions....Pages 68-72 Electrical Properties of Ultrathin Oxide Layers Formed by DC Plasma Anodization....Pages 73-77 Influence of Different Technologies of Metal Deposition and of Oxide Growth on the Electronic Properties of MIS Tunnel Diodes....Pages 78-81 Photoelectric Methods as a Tool for the Analysis of Current Flow Mechanism in MIS Tunnel Diodes....Pages 82-85 Front Matter....Pages 87-87 Charge Injection into Wide Energy Band-Gap Insulators....Pages 88-103 Oxide and Interface Charge Generation by Electron Injection in MOS Devices....Pages 104-110 Trapping Characteristics in SiO 2 ....Pages 111-117 Interface Effects in Avalanche Injection of Electrons into Silicon Doixide....Pages 118-121 Interface State and Charge Generation by Electron Tunneling into Thin Layers of SiO 2 ....Pages 122-125 Modelling of Flat-Band Voltage Shift During Avalanche Injection on MOS Capacitors....Pages 126-129 Influence of Electron-Phonon Scattering on Photoinjection into SiO 2 ....Pages 130-134 Front Matter....Pages 135-135 Charge Loss in MANOS Memory Structures....Pages 136-139 Surface-State Density Evaluation Problems in MNOS Structures....Pages 140-144 Dye-Sensitized Photodischarge of Metal-Dye-Oxide-Silicon (MDOS) and Metal-Dye-Nitride-Oxide-Silicon (MDNOS) Capacitors....Pages 145-148 Front Matter....Pages 149-149 EPR on MOS Interface States....Pages 150-160 The Non-Equilibrium Linear Voltage Ramp Technique as a Diagnostic Tool for the MOS Structure....Pages 161-164 MOS Characterization by Phase Shift Impedance Technique....Pages 165-168 Si/SiO 2 Properties Investigated by the CC-DLTS Method....Pages 169-173 Study of Ellipsometry:The Computation of Ellipsometric Parameters in a Nonuniform Film on Solid Substrate....Pages 174-178 Front Matter....Pages 179-179 Breakdown and Wearout Phenomena in SiO 2 ....Pages 180-194 Hydrogen-Sodium Interactions in Pd-MOS Devices....Pages 195-198 Electrical Behaviour of Hydrogen Ions in SiO 2 Films on Silicon....Pages 199-202 Chlorine Implantation in Thermal SiO 2 ....Pages 203-206 Front Matter....Pages 207-207 Deposition Technology of Insulating Films....Pages 208-218 Very High Charge Densities in Silicon Nitride Films on Silicon for Inversion Layer Solar Cells....Pages 219-223 Silicon Nitride Layers Grown by Plasma Enhanced Thermal Nitridation....Pages 224-227 Buried Oxide Layers Formed by Oxygen Implantation for Potential Use in Dielectrically Isolated ICs....Pages 228-231 Front Matter....Pages 233-233 Properties of Patterned and CW Laser-Crystallized Silicon Films on Amorphous Substrates....Pages 234-237 SiO 2 Interface Degradation and Minority Carrier Lifetime Effects of Laser Beam Processing....Pages 238-241 Laser-Induced Crystallization in Ge Films and Multilayered Al-Sb Films....Pages 242-245 Front Matter....Pages 247-247 Subband Physics with Real Interfaces....Pages 248-258 Front Matter....Pages 247-247 Transport Properties of Carriers at Oxide-Hg 1-x Cd x Te Interface....Pages 259-262 Role of Interface States in Electron Scattering at Low Temperatures....Pages 263-266 Neutral Scattering Centers Near the Si/SiO 2 -Interface of MOSFET Devices Prepared by TCE Oxidation....Pages 267-268 Front Matter....Pages 269-269 Native Oxide Reactions on III-V Compound Semiconductors....Pages 270-280 MISFET and MIS Diode Behaviour of Some Insulator-InP Systems....Pages 281-284 Plasma Anodised Alumina Films in GaAs and InP MIS Structures....Pages 285-287 Composition Changes During Oxidation of A III B V Surfaces....Pages 290-293 RF-Sputtering of Silicon Nitride Layers on GaAs Substrates: Characterization of an Intermediate Layer Between the Substrate and the Deposited Film....Pages 294-297 Surface Analytical and Capacitance-Voltage Characterization of Anodic Oxide Films on Hg 0.8 Cd 0.2 Te....Pages 298-302 Surface and In-Depth Analysis of Anodic Oxide Layers on Cd 0.2 Hg 0.8 Te....Pages 303-308 Impact of Insulator Charge Trapping on I.R.C.I.D. Transfer Efficiency....Pages 309-313 Back Matter....Pages 315-316