Iii-v Nitrade Semiconductors (optoelectronic Properties Of Semiconductors And Superlattices Series): Applications And Devices, Vol. 16

The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications. This compilation is very timely given the level of interest and the current stage of research in nitride semiconductor materials and device applications. This volume consists of chapters written by a number of leading researchers in nitride materials and device technology addressing Ohmic and Schottky contacts, AIGalnN multiple quantum well laser diodes, nitride vertical cavity emitting lasers, and ultraviolet photodetectors. This unique volume provides a comprehensive review and introduction to application and devices based on GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. "Recent and dramatic advances in III-V nitride semiconductor materials and device technology has led to an explosion of research interest and activity directed towards a plethora of applications of nitride materials in electronics and optoelectronics. III-V Nitride Semiconductors: Applications and Devices includes contributions of leading researchers in nitride materials and device technology. The contributions emphasize the Ohmic and Schottky contacts, integration of GaN with dissimilar substrate materials, piezoelectric effects, high electron mobility transistors, electron transport, GaN metal-semiconductor field-effect transistor, AlGaInN multiple quantum well laser diodes, blue vertical cavity emitting lasers, and ultraviolet photodetectors.". "The unique volume provides a comprehensive review and introduction of application and devices based on GaN and related compounds for newcomers to the field and a stimulus to further advances for experienced researchers."--BOOK JACKET. Cover Half Title Series Title Copyright CONTENTS About the Series Preface Introduction 1 Ohmic Contacts to GaN 2 Characterization of Schottky Contacts on Nitride Semiconductors 3 Integration of GaN Thin Films with Dissimilar Substrate Materials by Wafer Bonding and Laser Lift-Off 4 Spontaneous and Piezoelectric Polarization in Nitride Heterostructures 5 AlGaN/GaN High Electron Mobility Transistors 6 Two-Dimensional Electron Gas Transport Properties in AlGaN/GaN Heterostructure Field-Effect Transistors 7 Electron Transport in Wide-Bandgap Semiconductors and Heterostructures 8 GaN Metal-Semiconductor Field-Effect Transistor 9 Piezoelectric Effect in Group-III Nitride-Based Heterostructures and Quantum Wells 10 AlGaInN MQW Laser Diodes 11 Blue Vertical Cavity Surface Emitting Lasers and InGaN Quantum Dot Lasers 12 III-Nitride-Based UV Photodetectors 13 III-Nitride Ultraviolet Photodetectors 14 AlGaN UV Photodetectors Index

leading Researchers In Nitride Materials And Device Technology Describe Applications Of Nitride Materials In Electronics And Optoelectronics, Reflecting The Range Of Research On Nitride Semiconductor Material Issues Currently Being Pursued In Academic, Government, And Industrial Laboratories. Subjects Examined Include Ohmic And Schottky Contacts, Integration Of Gan With Dissimilar Substrate Material, Piezoelectric Effects, And Two-dimensional Electron Gas Transport In Heterostructures. Other Topics Are Gan Metal-semiconductor Field Effect Transistors, Algainn Multiple Quantum Well Laser Diodes, Nitride Vertical Cavity Emitting Lasers, And Algan Ultraviolet Photodetectors. Annotation (c)2003 Book News, Inc., Portland, Or

Nitrides of group-III elements, in particular, gallium nitride (GaN) and its alloys with aluminum nitride (AIN) and indium nitride (InN), are of significant scientific and practical interest.