[IEEE 2000 22nd International Conference on Microelectronics. Proceedings - Nis, Yugoslavia (14-17 May 2000)] 2000 22nd International Conference on Microelectronics. Proceedings (Cat. No.00TH8400) - Influence of gate oxide charge density on VDMOS transist

D104 provides information about advanced OTFT (Organic thin film transistor) structures, their modeling and extraction of performance parameters, materials of individual layers, their molecular structures, basics of pi-conjugated semiconducting materials and their properties, OTFT charge transport phenomena and fabrication techniques. It includes applications of OTFTs such as single and dual gate OTFT based inverter circuits along with bootstrap techniques, SRAM cell designs based on different material and circuit configurations, light emitting diodes (LEDs). Besides this, application of dual gate OTFT in the logic gate, shift register, Flip-Flop, counter circuits will be included as well. Read more... Abstract: D104 provides information about advanced OTFT (Organic thin film transistor) structures, their modeling and extraction of performance parameters, materials of individual layers, their molecular structures, basics of pi-conjugated semiconducting materials and their properties, OTFT charge transport phenomena and fabrication techniques. It includes applications of OTFTs such as single and dual gate OTFT based inverter circuits along with bootstrap techniques, SRAM cell designs based on different material and circuit configurations, light emitting diodes (LEDs). Besides this, application of dual gate OTFT in the logic gate, shift register, Flip-Flop, counter circuits will be included as well Content: Cover Half Title Title Page Copyrigt Page Table of Contents Preface Authors SECTION I: Organic Device Physics and Modeling Chapter 1: Introduction 1.1 Introduction 1.2 Organic Semiconductor Materials for Organic Device 1.2.1 Polymers 1.2.2 Small Molecules 1.2.3 Semiconductor Blends 1.3 Organic Thin-Film Transistors (OTFTs) 1.3.1 Operating Principle 1.4 Future Perspectives 1.5 Scope of the Book Problems Multiple Choice Short Answer References Chapter 2: OTFT Parameters, Structures, Models, Materials, Fabrication, and Applications: A Review 2.1 Introduction 2.2 Parameters of Organic Thin-Film Transistors (OTFTs)2.2.1 Mobility 2.2.2 Threshold Voltage 2.2.3 On/Off Current Ratio 2.2.4 Subthreshold Slope 2.3 OTFT Structures 2.3.1 Single Gate Structure 2.3.2 Dual Gate Structure 2.3.3 Vertical Channel Structure 2.3.4 Cylindrical Gate Structure 2.4 OTFT Models 2.4.1 Compact Direct Current (DC) Model 2.4.2 Charge Drift Model 2.4.3 Charge Drift Model for Subthreshold Region 2.5 Charge Transport in Organic Semiconductors 2.5.1 Variable Range Hopping (VRH) Model 2.5.2 Multiple Trapping and Release (MTR) Model 2.5.3 Polaron Model 2.6 Materials2.6.1 Organic Semiconductors 2.6.1.1 p-Type 2.6.1.2 n-Type 2.6.2 Electrode Materials 2.6.3 Gate Dielectric Materials 2.6.4 Substrate Materials 2.7 Fabrication 2.7.1 Physical Vapor Deposition (PVD) Techniques 2.7.1.1 Thermal Vacuum Evaporation Techniques 2.7.1.2 Sputtering Techniques 2.7.2 Solution Processing Techniques 2.7.2.1 Spin Coating 2.7.2.2 Dip Coating 2.7.2.3 Inkjet Printing/Screen Printing 2.7.3 Chemical Vapor Deposition Technique 2.8 Performance-Influencing Factors of OTFTs 2.8.1 Dimensional Parameters 2.8.2 Contact-Semiconductor Interface 2.8.3 Semiconductor-Dielectric Interfac2.9 Concluding Remarks Problems Multiple Choice Short Answer Descriptive Answer Exercises References Chapter 3: Analytical Modeling and Parameter Extraction of Top and Bottom Contact Structures of Organic Thin-Film Transistors 3.1 Introduction 3.2 Device Structure and Contact Effects 3.3 Analytical Models of Organic Thin-Film Transistors (OTFTs) 3.3.1 Model for Gate-Contact Overlap Region 3.3.2 Model for Current in Linear and Saturation Region 3.4 Differential Method for Parameter Extraction 3.5 Results and Discussion 3.6 Concluding RemarksProblems Multiple Choice Short Answer Exercises References Chapter 4: Impact of Semiconductor and Dielectric Thicknesses on the Performance of Top and Bottom Contact Organic Thin-Film Transistors 4.1 Introduction 4.2 Process/Device Simulation Tool and Simulation Conditions 4.2.1 Simulation Setup 4.2.2 Device Simulation Steps 4.2.2.1 Defining Structural Dimensions and Mesh Specifications 4.2.2.2 Defining Material Parameters and Applicaton of the Approprite Physical Models 4.2.2.3 Operational Bias Conditions and Run the Simulation