Hydrogen in Semiconductors, Volume 34: Hydrogen in SiliconVolume 34 (Semiconductors & Semimetals)

Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed coverage of hydrogen in silicon, chapters are provided that discuss hydrogen-related phenomena in germanium and the neutralization of defects and dopants in III\*b1V semiconductors. Provides the most in-depth coverage of hydrogen in silicon available in a single source\*\*Includes an extensive chapter on the neutralization of defects in III\*b1V semiconductors\*\*Combines both experimental and theoretical studies to form a comprehensive reference Content: Edited by Page iii Copyright page Page iv List of Contributors Pages xi-xii Preface Page xiii J.I. Pankove, N.M. Johnson Chapter 1 Introduction to Hydrogen in Semiconductors Original Research Article Pages 1-15 J.I. Pankove, N.M. Johnson Chapter 2 Hydrogenation Methods Original Research Article Pages 17-33 Carleton H. Seager Chapter 3 Hydrogenation of Defects in Crystalline Silicon Original Research Article Pages 35-47 Jacques I. Pankove Chapter 4 Hydrogen Passivation of Damage Centers in Semiconductors Original Research Article Pages 49-64 James W. Corbett, Péter Deák, Uroš V. Desnica, Stephen J. Pearton Chapter 5 Neutralization of Deep Levels in Silicon Original Research Article Pages 65-89 S.J. Pearton Chapter 6 Neutralization of Shallow Acceptors in Silicon Original Research Article Pages 91-111 Jacques I. Pankove Chapter 7 Neutralization of Donor Dopants and Formation of Hydrogen-Induced Defects in n -Type Silicon Original Research Article Pages 113-137 N.M. Johnson Chapter 8 Vibrational Spectroscopy of Hydrogen-Related Defects in Silicon Original Research Article Pages 139-183 Michael Stavola, S.J. Pearton Chapter 9 Hydrogen in Semiconductors: Ion Beam Techniques Original Research Article Pages 185-224 A.D. Marwick Chapter 10 Hydrogen Migration and Solubility in Silicon Original Research Article Pages 225-350 Conyers Herring, N.M. Johnson Chapter 11 Hydrogen-Related Phenomena in Crystalline Germanium Original Research Article Pages 351-380 Eugene E. Haller Chapter 12 Hydrogen Diffusion in Amorphous Silicon Original Research Article Pages 381-445 James Kakalios Chapter 13 Neutralization of Defects and Dopants in III-V Semiconductors Original Research Article Pages 447-510 J. Chevallier, B. Clerjaud, B. Pajot Chapter 14 Computational Studies of Hydrogen-Containing Complexes in Semiconductors Original Research Article Pages 511-546 Gary G. DeLeo, W. Beall Fowler Chapter 15 Muonium in Semiconductors Original Research Article Pages 547-584 R.F. Kiefl, T.L. Estle Chapter 16 Theory of Isolated Interstitial Hydrogen and Muonium in Crystalline Semiconductors Original Research Article Pages 585-622 Chris G. Van de Walle Index Pages 623-629 Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This sixteen-chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to passivate defects, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed coverage of hydrogen in silicon, chapters are provided that discuss hydrogen-related phenomena in germanium and the neutralization of defects and dopants in III*b1V semiconductors.

Provides the most in-depth coverage of hydrogen in silicon available in a single source**Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors**Combines both experimental and theoretical studies to form a comprehensive reference Hydrogen plays an important role in silicon technology, having a profound effect on a wide range of properties. Thus, the study of hydrogen in semiconductors has received much attention from an interdisciplinary assortment of researchers. This 16 chapter volume provides a comprehensive review of the field, including a discussion of hydrogenation methods, the use of hydrogen to neutralize deep levels, shallow acceptors and shallow donors in silicon, vibrational spectroscopy, and hydrogen-induced defects in silicon. In addition to this detailed coverage of hydrogen in silicon, chapters are provided that discuss hydrogen-related phenomena in germanium and the neutralization of defects and dopants in III-V semiconductors. Features and benefits include in-depth coverage of hydrogen in silicon available in a single source, an extensive chapter devoted to the neutralization of defects in III-V semi-conductors, and both experimental and theoretical studies to provide a comprehensive reference. Reviews the state-of-the-art of thin film diamond - CVD, a promising semiconductor that may one day rival silicon as the material of choice for electronics. This book covers the results regarding growth and structural properties, doping and defect characterization, hydrogen in and on diamond as well as surface properties in general, and more. Combining both experimental and theoretical studies, this volume provides in-depth coverage of hydrogen in silicon, including the neutralization of defects in III-V semiconductors. Topics discussed include hydrogeneration methods, vibrational spectroscopy, and shallow acceptors/donors in silicon.