Handbook Series on Semiconductor Parameters - Volume 1: Si, Ge, C (Diamond), Gaas, Gap, Gasb, Inas, Inp, Insb

World Scientific Publishing Co. Pte. Ltd. 218 pages — 2000 The Handbook Series on Semiconductor Parameters will consist of five volumes and will include data of the most popular semiconductor materials. These volumes aim to be a basic reference for scientists, engineers, students and technicians working in semiconductor materials and devices. The books have been kept compact but comprehensive and contain the values of frequently needed parameters, selected and commented by leading experts on these materials. The first volume will include data on Si, Ge, С (Diamond), GaAs, GaP, GaSb, inAs, InP, and InSb. Ch. 1. Aluminium gallium arsenide (Al[symbol]Ga[symbol]As) / Yu. A. Goldberg -- ch. 2. Gallium indium phosphide (Ga[symbol]In[symbol]P) / Yu. A. Goldberg -- ch. 3. Gallium indium arsenide (Al[symbol]In[symbol]As) / Yu. A. Goldberg and Natalya M. Schmidt -- ch. 4. Gallium indium antimonide (Ga[symbol]In[symbol]Sb) / Yu. A. Goldberg -- ch. 5. Gallium arsenide antimonide (GaAs[symbol]Sb[symbol]) / A. Ya Vul' -- ch. 6. Indium arsenide-antimonide (InAs[symbol]Sb[symbol]) / M.S. Bresler -- ch. 7. Gallium indium arsenide phosphide (Ga[symbol]In[symbol]As[symbol]P[symbol]) / Yu. A. Goldberg and Natalya M. Shmidt -- ch. 8. Gallium indium arsenide antimonide (Ga[symbol]In[symbol]As[symbol]Sb[symbol]) / Maya P. Mikhailova The Handbook Series on Semiconductor Parameters will consist of 5 volumes and will include data on the most popular semiconductor materials. These volumes aim to be a basic reference for scientists, engineers, students and technicians working in semiconductor materials and devices. The books have been kept compact but comprehensive and contain the values of frequently needed parameters selected and commented by leading experts on these materials. The first volume will include data on Si, Ge, diamond, GaAs, GaP, GaSb, InAs, InP, and InSb. Designed for scientists, engineers, students and technicians working in semiconductor materials and devices, this is part of a five-volume series that provides data on the most popular semiconductor materials. These two volumes includes data on Si, Ge, diamond, GaAs, GaP, GaSb, InAs, InP and InSb. Designed for scientists, engineers, students and technicians working in semiconductor materials and devices, this is part of a five-volume series that provides data on the most popular semiconductor materials. This first volume contains data on Si, Ge, diamond, GaAs, GaP, GaSb, InAs, InP and InSb. Designed for scientists, engineers, students and technicians working in semiconductor materials and devices, this is part of a five-volume series that provides data on the most popular semiconductor materials. This volume contains data on ternary and quarternary A3B5 semiconductors. Vol. 1. Si, Ge, C (Diamond), GaAs, GaP, GaSb, InAs, InP, InSb Vol. 2. Ternary and quaternary A3B5 semiconductors Vol. 3. A4B4, A4B6 and A3N semiconductors Vol. 4. A2B6 semiconductors and ternary A2B6 compounds Vol. 5. Amorphous semiconductors and SiO2 Si3N4. V. 2. Ternary And Quaternary Iii-v Compounds. Editors, M. Levinshtein, S. Rumyantsev, M. Shur. Includes Bibliographical References. Temperature dependence of the energy gap, (1.2.1) where T is temperature in degrees K.