Handbook of Nitride Semiconductors and Devices, Electronic and Optical Processes in Nitrides (Handbook of Nitride Semiconductors and Devices (VCH)) (Volume 2)

The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 2 addresses the electrical and optical properties of nitride materials. It includes semiconductor metal contacts, impurity and carrier concentrations, and carrier transport in semiconductors.Content: Chapter 1 Metal Contacts to GaN and Processing (pages 1–119): Chapter 2 Determination of Impurity and Carrier Concentrations (pages 121–163): Chapter 3 Carrier Transport (pages 165–408): Chapter 4 The p–n Junction (pages 409–490): Chapter 5 Optical Processes in Semiconductors and Optical Properties of Nitride Semiconductors and Heterostructures (pages 491–827): Volume 3 of the Handbook of Nitride Semiconductors and Devices reference work deals with nitride semiconductor devices and device technology. Among the application areas that are prominently featured in this volume are LEDs, lasers, FETs and HBTs, detectors and unique issues surrounding solar blind detection. v. 1. Materials properties, physics and growth v. 2. Electronic and optical processes in nitrides v. 3. GaN-based optical and electronic devices.