Fundamental Physics Of Amorphous Semiconductors: Proceedings Of The Kyoto Summer Institute Kyoto, Japan, September 8-11, 1980 (springer Series In Solid-state Sciences)

The Kyoto Summer Institute 1980 (KSI '80), devoted to "Fundamental Physics of Amorphous Semiconductors", was held at Research Institute for Fundamental Physics (RIFP), Kyoto University, from 8-11 September, 1980. The KSI '80 was the successor of the preceding Institutes which were held in July 1978 on "Particle Physics and Accelerator Projects" and in September 1979 on "Physics of Low-Dimensional Systems". The KSI '80 was attended by 200 participants, of which 36 were from abroad: Canada, France, Korea, Poland, U.K., U.S.A, U.S.S.R., and the Federal Republic of Germany. The KSI '80 was organized by RIFP and directed by the Amorphous Semicon­ ductor group in Japan. A few years ago, we started to organize an interna­ tional meeting on amorphous semiconductors' as a satell ite meeting of the International Conference on "Physics of Semiconductors" held on September 1-5, 1980 in Kyoto. We later decided to hold the meeting in the form of the Kyoto Summer Institute. The Kyoto Summer Institute is aimed to be something between a school and a conference. Accordingly, the object of the KSI '80 was to provide a series of invited lectures and informal seminars on fundamental physics of amorphous semiconductors. No contributed paper was accepted, but seminars were open. Front Matter....Pages I-VIII What are Non-Crystalline Semiconductors....Pages 1-13 Defects in Covalent Amorphous Semiconductors....Pages 14-32 Surface Effects and Transport Properties in Thin films of Hydrogenated Silicon....Pages 33-39 The Past, Present and Future of Amorphous Silicon....Pages 40-45 Doping and the Density of States of Amorphous Silicon....Pages 46-55 The Effect of Hydrogen and Other Additives on the Electronic Properties of Amorphous Silicon....Pages 56-71 New Insights on Amorphous Semiconductors from Studies of Hydrogenated a-Ge, a-Si, a-Si 1-x Ge x and a-GaAs....Pages 72-86 Chemical Bonding of Alloy Atoms in Amorphous Silicon....Pages 87-103 Photo-Induced Phenomena in Amorphous Semiconductors....Pages 104-118 Theory of Electronic Properties of Amorphous Semiconductors....Pages 119-144 Some Problems of the Electron Theory of Disorderd Semiconductors....Pages 145-154 The Anderson Localisation Problem....Pages 155-163 Summary Talk....Pages 164-165 Back Matter....Pages 166-184