Frontiers in Electronics (With Cd-Rom) : Proceedings of the WOFE-04, Wyndham Aruba Beach Resort

Frontiers in Electronics reports on the most recent developments and future trends in the electronics and photonics industry. The issues address CMOS, SOI and wide band gap semiconductor technology, terahertz technology, and bioelectronics, providing a unique interdisciplinary overview of the key emerging issues. This volume accurately reflects the recent research and development trends: from pure research to research and development; and its contributors are leading experts in microelectronics, nanoelectronics, and nanophotonics from academia, industry, and government agencies. Sample Chapter CONTENTS......Page 20 Preface......Page 6 Photographs at WOFE 2004......Page 10 I. Frontiers in Electronics: Technology Trends and Future Concepts......Page 25 Are we at the End of CMOS Scaling?......Page 27 3D Size Effects in Advanced SOI Devices......Page 33 Frontiers of Nano-Bio System......Page 55 Challenges For Future Semiconductor Manufacturing......Page 67 Nanoelectronics - Opportunities and Challenges......Page 107 Asymmetric Tunneling Source MOSFETS: A Novel Device Solution for Sub-100nm CMOS Technology......Page 119 II. CMOS Technology: Nanoscale Physics New Materials and Structures......Page 127 Analysis of the Effects of Strain in Ultra-Thin SOI MOS Devices......Page 129 Device Simulation Demands of Upcoming Microelectronics Devices......Page 139 SON (Silicon On Nothing) Platform for ULSI Era: Technology & Devices......Page 161 Highly Scaled CMOS Device Technologies with New Structures and New Materials......Page 171 Performance Limitations of Si CMOS and Alternatives for Nanoelectronics......Page 199 CMOS Devices Architectures and Technology Innovations for the Nanoelectronics Era......Page 217 Novel Dielectric Materials for Future Transistor Generations......Page 245 Part I: Bond Strain and Defects at Si-SiO2 and Dielectric Interfaces in High-k Gate Stacks......Page 265 Part II: Conduction Band-Edge States Associated with Removal of d-State Degeneracies by the Static Jahn-Teller Effect......Page 287 Advanced Cooling Technologies For Microprocessors......Page 325 A New Approach to Characterize and Predict Lifetime of Deep-Submicron NMOS Devices......Page 339 Undoped Body Symmetric Double Gate MOSFET Modeling......Page 349 III. CMOS Technology: Device and Process Characterization......Page 375 Study of the Gate Insulator/Silicon Interface Utilizing Soft and Hard X-Ray Photoelectron Spectroscopy at SPring-8......Page 377 Deformable Electronic Surfaces......Page 389 Current Issues and Future Prospects of Lithography......Page 399 A Theoretical Study of Point Defects in Zirconia-Silicon Interfaces......Page 413 Elastomeric Interconnects......Page 421 IV. Nanowire/Nanotube and Quantum Device......Page 433 On the Possibility of an Intersubband Laser in Silicon-on-Insulator......Page 435 Toward Ultra-Low Power III-V Quantum Large Scale Integrated Circuits for Ubiquitous Network Era......Page 445 Ballistic Electron Acceleration Negative-Differential-Conductivity Devices......Page 461 Current Instability and Plasma Wave Generation in Ungated Two Dimensional Electron Layers......Page 467 V. Spintronics and Emerging High-Speed Devices......Page 477 High-Power Switching Using III-Nitride Metal-Oxide-Semiconductor Heterostructures......Page 479 Recent Progress on GaN-Based Electron Devices......Page 493 Advancements in Nanoelectronic SONOS Nonvolatile Semiconductor Memory (NVSM) Devices and Technology......Page 503 A Quantum Dot Microcavity Terahertz Laser......Page 527 The Growth and Characterization of Room Temperature Ferromagnetic Wideband-Gap Materials For Spintronic Applications......Page 539 Enhancing Power Electronic Devices with Wide Bandgap Semiconductors......Page 569 VI. Optoelectronics......Page 581 Feasibility of an Optical Frequency Modulation System for Free-Space Optical Communications......Page 583 Recent Development of Sb-Based Phototransistors in the 0.9- to 2.2-um Wavelength Range For Applications to Laser Remote Sensing......Page 591 Ultra Violet Detection Sensors......Page 607 Tunable Coherent Radiation from Terahertz to Microwave by Mixing Two Infrared Frequencies in a 47-mm-Long GaSe Crystal......Page 613 High Power Type-I GaSb-Based Lasers......Page 621 VII. Terahertz Devices and Concepts......Page 631 Bio-Molecular Inspired Electronic Architectures for Enhanced Sensing of THz-Frequency Bio-Signatures......Page 633 Spin Dependent Transport in Quantum and Classically Configured Devices......Page 663 Biologically-Inspired Chemically-Directed Self-Assembly of Semiconductor Quantum-Dot-Based Systems: Phonon-Hole Scattering in DNA Bound to DNA-Quantum-Dot Complexes......Page 683 Terahertz Signal Transmission in Molecular Systems......Page 693 Simulating Nanoscale Semiconductor Devices......Page 701 VIII. Novel Devices and Applications......Page 715 Recent Progresses of Application-Oriented MEMS Through Industry-University Collaboration......Page 717 Mixed-Valence Transition Metal Complex Based Integral Architecture for Molecular Computing (I): Attachment of Linker Molecule to Silicon (100)-2x1 Surface......Page 729 Silicon Fibre Technology Development for Wearable and Ambient Electronics Applications......Page 737 Silicon-Based Integrated MOSFETs and MESFETs: A New Paradigm for Low Power Mixed Signal Monolithic Systems Using Commercially Available SOI......Page 747 Design Modeling Testing and Spice Parameter Extraction of DIMOS Transistor in 4H-Silicon Carbide......Page 757 Author Index......Page 771 Reports on the developments and trends in the electronics and photonics industry. This work addresses CMOS, SOI and wide band gap semiconductor technology, terahertz technology, and bioelectronics, providing an interdisciplinary overview of the key issues.