FROM 5G TO 6G AND BEYOND: THE 7 CS OF FUTURE COMMUNICATIONS: The 7 Cs of Future Communications

With speeds of up to 20 gigabits per second and the ability to support up to one million devices per square kilometer, 5G — the current generation of mobile communications technology — may seem impressive, but 6G is set to take these capabilities even further. Envisioned to deliver a peak data rate of 1 terabit per second and latency of 100 microseconds or less, 6G must be able to seamlessly and securely deliver data in an ever increasingly saturated network of wireless connections without exceeding the energy requirements of 5G.This book covers every aspect of future communications, from key technologies, to design challenges, network requirements, and users experiences; to standardization, chip design, and industry applications from 5G to 6G. It presents the requirements and use cases of 6G, RF transceivers roadmap for 2030 and beyond, and modeling of RF devices for 5G/6G applications. In here, a modified Shannon's capacity formula that is critical for future advanced wireless communications such as 6G is discussed for the first time. It also presents the standardization of 6G wireless communication systems with emphasis on Standard Development Organizations (SDOs), regulatory bodies and administrations, ITU, industry forums, and 6G standard timeline. The book presents an RF/mm-wave integrated circuit design for future communications to provides readers with an easy-to-understand overview of voltage-controlled oscillators, power amplifiers, low-noise amplifiers, frequency synthesizers, high-frequency dividers, and chip-to-chip communications isolation technology.This book is an excellent reference for readers specializing in electrical and electronic engineering, wireless communication, integrated circuit design, circuits and systems, to learn more about 5G and even 6G communication standards and RF/mm-wave IC design. In particular, professionals working in the foundry, fabless semiconductor companies, original equipment manufacturers, and integrated device manufacturers will also benefit from this book. Contents Preface About the Editor About the Contributors CONVERGENCE Chapter 1. Transceivers for Future Communications 1.1. Fifth-Generation Wireless Network Communication 1.2. Limitations of 5G 1.3. Requirements of 6G and Application Scenarios of 6G Wireless Networks 1.4. Futuristic Application Use Cases for 6G 1.4.1. Multi-sensory holographic teleportation 1.4.2. Remote real-time healthcare system 1.4.3. Autonomous cyber-physical systems 1.4.4. Space connectivity 1.5. Pervasive Artificial Intelligence 1.5.1. Possible problems for the pervasive AI 1.5.2. Security concerns in 6G 1.6. Available Resources — Frequency Spectrum 1.6.1. Sub-6 GHz bands 1.6.2. mmWave bands 1.6.3. Terahertz band communications 1.6.3.1. Application scenarios of THz band communications 1.6.3.2. Possible problems in the THz band communications 1.7. Projected Roadmap for Wireless Communication Systems for 6G and Beyond 1.8. RF Transceivers Roadmap for 2030 and Beyond 1.8.1. Technology for a future integrated transceiver 1.8.2. Integrated transceiver for future communication 1.8.2.1. Transmitter 1.8.2.2. THz LO generation 1.8.2.3. THz receiver 1.9. Modeling of RF Devices for 5G and Beyond 1.9.1. Introduction to RF modeling 1.9.2. RF spectrum 1.9.3. RF device parameters 1.9.3.1. The cut-off frequency 1.9.3.2. Maximum oscillation frequency fmax 1.9.3.3. Noise figure NFmin 1.9.4. RF device modeling (5G and beyond) 1.9.4.1. High frequency modeling procedure 1.9.5. Calibration and de-embedding 1.9.5.1. Calibration 1.9.5.2. De-embedding 1.9.6. Noise figure measurement 1.9.7. RF device modeling for advanced beyond 5G and terahertz designs 1.9.7.1. THz channel measurement and modeling 1.9.7.2. THz channel characteristics References COMMUNICATION Chapter 2. Modified Shannon Capacity for Wireless Communications 2.1. Introduction to Wireless Age and Shannon Theory 2.2. Modified Shannon’s Capacity for Wireless Communication 2.2.1. The classic Shannon formula 2.2.2. Modified Shannon formula 2.3. Conclusion References CONNECTIVITY Chapter 3. Random Access: Connection-Free or Connection-Based? 3.1. Introduction 3.2. Modeling: Channel-Centric vs. Node-Centric 3.2.1. Network assumptions 3.2.2. Modeling methodologies 3.2.3. Channel-centric model 3.2.4. Node-centric model 3.3. Throughput Optimization 3.3.1. Throughput optimization via channel-centric model 3.3.2. Throughput optimization via node-centric model 3.4. Maximum Effective Throughput 3.4.1. Connection-free random access 3.4.2. Connection-based random access 3.4.3. Connection-establishment threshold 3.5. Case Studies 3.5.1. Wi-Fi 3.5.1.1. An illustrative example 3.5.1.2. Simulation results 3.5.2. 5G 3.5.2.1. An illustrative example 3.5.2.2. Simulation results 3.6. Summary References COMPONENT Chapter 4. Microwave and Millimeter-Wave Phase Change Material Devices for Future Communications 4.1. History of Phase Change Materials 4.2. Basic Principle of Phase Change Materials 4.2.1. Phase change material: Germanium Telluride (GeTe) 4.2.2. Metal-insulator-transition material: Vanadium oxide 4.2.3. GeTe: A clear choice for RF devices 4.3. Characterization of Phase Change Materials 4.3.1. Deposition conditions 4.3.2. Study of surface topography 4.4. Fabrication Process 4.5. Phase Change RF Switches 4.5.1. Comparison with state-of-the-art 4.5.2. Bias signature, resistance change, and thermal crosstalk 4.6. Potential Applications of PCM Switches in 5G Wireless Communication Systems 4.6.1. Full duplex systems 4.6.2. Beamforming networks 4.6.3. Reconfigurable intelligent surfaces 4.7. PCM-based Reconfigurable mmWave Components 4.7.1. A scalable crossbar switch matrix 4.7.2. mmWave phase shifters 4.7.3. Wideband mmWave digital attenuator 4.8. Conclusion References CONFORMITY Chapter 5. Standardization of 6G Wireless Communication Systems 5.1. The 6G Vision 5.2. The 6G Enabling Technologies 5.2.1. Machine as the primary user 5.2.1.1. Flexible waveforms 5.2.1.2. Agile multiple access 5.2.1.3. High-precision wireless time-sensitive network 5.2.1.4. Sensing-communication-computing-control convergence 5.2.2. Artificial Intelligence (AI) as a performance driver 5.2.3. Agile and software-defined everything (SDX) as necessity 5.2.3.1. Integrated terrestrial and non-terrestrial network for space-air-ground-sea coverage 5.2.3.2. Large Reconfigurable Intelligent Surface 5.2.3.3. Heterogeneous spectrum access and management 5.2.3.4. Open network 5.2.4. Privacy, security, and resilience as warranty 5.2.5. Sustainable networking and energy efficiency as baseline 5.2.5.1. Specifications and designs 5.2.5.2. AI-driven solution 5.3. Selected 6G Research Initiatives 5.3.1. European Union 5.3.2. The United States 5.3.3. China 5.3.4. Japan 5.3.5. Korea 5.4. The 6G Standard Development 5.4.1. Standard Development Organizations (SDOs) 5.4.2. Regulatory bodies and administrations 5.4.3. ITU 5.4.4. Industry forums 5.4.5. 6G standard timeline 5.5. Summary and Conclusions References CIRCUIT Chapter 6. Generalized Multiple Tanks Based RF/mm-wave IC for Future Communications 6.1. Substrate Loss 6.2. Generalized Multiple Tanks 6.2.1. Theory of multiple tanks 6.3. Multiple Tanks Technique for VCO and Dividers 6.3.1. Application of multiple tanks bimodal characteristics 6.3.2. Gain enhancement characteristics 6.3.3. Compact chip area applications 6.3.4. High quality factor applications 6.4. Multiple Tanks Technique for Power Amplifiers 6.4.1. Reconfigurable power amplifier with high PAE 6.4.2. CMOS power amplifier using hybrid coupling combiner 6.4.3. Transformer-based power amplifier 6.5. Multiple Tanks Technique for Switch Applications 6.5.1. Switchable artificial resonators introduced for SPDT based on multiple tanks technique 6.5.2. SPDT switches artificial resonator based on multiple tanks with better isolation and small chip size in THz band 6.6. Multiple Tanks Technique in Transceiver SOC 6.6.1. 60-GHz low-power dual-chip wireless communication system 6.6.2. 29.5–33.4-GHz PLL synthesizer SOC References CHIP Chapter 7. Chip-to-Chip Communications Over a Galvanic Isolation Barrier 7.1. Introduction 7.2. Components for Isolation Technology 7.2.1. Optical-based isolation component 7.2.2. Non-optical-based isolation component 7.2.3. Isolation using magnetic and capacitive coupling 7.3. Chip-to-Chip Communications over the Galvanic Isolation 7.3.1. Optocouplers 7.3.2. Magnetic and capacitive isolator 7.4. Common Mode Noise 7.5. Receiver Signal Strength versus Isolation Distance 7.6. Effect of Common Mode Noise on Transmitter and Receiver 7.7. Applications of Isolation Communications 7.8. Communications Topology 7.8.1. Primary side serial packetized data 7.9. Conclusion References Index Chapter 1. RF CMOS Systems on Chips 1.1. Modern RF Mobile Technologies 1.2. The RF Transceiver System 1.3. Modulation and Demodulation Techniques 1.4. Multiple Access Techniques 1.5. Receiver Sensitivity and Linearity 1.6. On-chip Power Amplifier 1.7. The Cellular Phone Concept 1.8. The CMOS RF Technology References Chapter 2. RF CMOS Devices and Process Design Kits 2.1. Introduction 2.2. RF Transistors 2.2.1. BSIM3v3 Model 2.2.2. BSIM4 Model 2.2.3. Figure of Merit 2.2.3.1. fT definition and extraction 2.2.3.2. fMAX definition and extraction 2.2.4. RF Parasitics in MOSFETs 2.2.5. Scalable RF CMOS Transistor Modeling 2.2.5.1. RF MOSFET model 2.2.5.2. Gate resistance modeling 2.2.5.3. Source and drain resistance modeling 2.2.5.4. Gate to substrate capacitance and resistance modeling 2.2.5.5. Gate to source and gate to drain capacitance modeling 2.2.5.6. Drain to source capacitance modeling 2.2.5.7. Substrate resistance modeling 2.3. On-chip Inductors 2.3.1. Spiral Inductors on Silicon 2.3.1.1. Figure of merits 2.3.2. Advantages of Silicon-based Spiral Inductors 2.3.3. Identifying Loss Mechanisms in Silicon-based Spiral Inductors 2.3.3.1. Metallization resistive loss 2.3.3.2. Substrate capacitive and resistive loss 2.3.3.3. Substrate eddy current 2.3.4. Q-Factor Enhancement Techniques 2.3.4.1. Q-factor enhancement using processing technologies 2.3.4.2. Q-factor enhancement using active inductors 2.3.4.3. Q-factor enhancement using coupled spiral coils 2.3.4.4. Q-factor enhancement using layout optimization 2.3.4.5. Q-factor enhancement using inductor device model 2.3.4.6. Figure of merits for differential spiral inductors 2.4. Baluns/Transformers 2.4.1. The Ideal Transformer 2.4.2. Transformer Types 2.4.3. Inductance, Capacitance, and Resistance 2.4.4. Coupling Coefficient k, Turn Ratio n, and Quality Factor Q 2.4.5. Patterned Ground Shield 2.4.6. Designing the Transformer 2.5. RF Interconnects 2.5.1. Transmission Line Concept 2.5.1.1. Transmission line constants 2.5.1.2. Transmission line impedances 2.5.1.3. Reflection and voltage standing wave ratio 2.5.1.4. Frequency-dependent charge distribution 2.5.1.5. Effects of dielectric on interconnects 2.5.2. Existing Methodologies to Tackle Post Layout Parasitics 2.5.3. Proposed Figure of Merit for RF Interconnects 2.6. Varactors 2.6.1. Functions of Varactors 2.6.2. Varactor Design 2.7. RF Capacitors 2.7.1. Capacitance 2.7.2. Geometry 2.7.3. Quality Factor and Series Resistance 2.7.4. Capacitance Modeling 2.7.5. Impedances 2.7.6. Design Considerations 2.8. Process Design Kits 2.8.1. Benefits 2.8.2. Advanced Device Modeling and Front-end Design 2.8.3. Back-end Design and Accelerated Layout 2.8.4. Physical Verification and Silicon Analysis 2.8.5. Future of Process Design Kits 2.9. Summary References Chapter 3. RF CMOS Low Noise Amplifiers 3.1. Basic Concepts of LNAs 3.1.1. Operating Frequency 3.1.2. Sensitivity 3.1.3. Noise Figure and Voltage Gain 3.1.4. 1 -dB Compression Point 3.1.5. The 3rd Order Intercept Point 3.1.6. S-Parameters 3.2. Input Architecture of LNAs 3.2.1. Common Source Stage with Resistive Termination 3.2.2. Common Gate Stage 3.2.3. Common Source Stage with Shunt Feedback 3.2.4. Common Source Stage with Source Inductive Degeneration 3.3. Input Matching Analysis 3.4. Design of a Single-band LNA (LNA1) 3.4.1. Noise Figure Optimization 3.4.2. Design Methodology 3.4.3. Measurement Results 3.5. Summary References Chapter 4. RF Mixers 4.1. Introduction 4.2. Common Configurations of Active Mixers 4.3. Active Mixer with Current Booster 4.4. Passive Mixers 4.5. Port Isolation and DC Offset in Direct Conversion Mixers 4.6. Image Reject Mixers for Low IF Architectures References Chapter 5. RF CMOS Oscillators 5.1. Introduction 5.1.1. Ring Oscillator 5.1.2. LC Oscillator 5.2. Various LC VCO Topologies 5.2.1. Colpitts and HartleyLC VCOs 5.2.2. Differential LC VCOs 5.2.2.1. Complementary LC VCOs 5.2.2.2. Tail current source of LC VCOs 5.3. LC VCO Design Methodology 5.3.1. Topology 5.3.1.1. Operation theory 5.3.1.2. Equivalent circuit of cross-coupled LC tank VCO 5.3.2. Associated Noise Sources of Complementary LC Tank VCO 5.3.2.1. Noise sources of the LC tank 5.3.2.2. Upconversion of 1/f noise in the tail transistor 5.3.3. Noise Sources in Active Devices 5.3.3.1. High frequency noise 5.3.3.2. Noise sources in cross-coupled transistors 5.3.3.3. Optimization of channel length Lch 5.3.4. Linear Time Variant (LTV) Phase Noise Analysis 5.3.4.1. Definition of Impulse Sensitivity Function (ISF)-Γ(ω0t) 5.3.4.2. Parameterized phase impulse response hφ (t, τ) using ISF 5.3.4.3. Phase noise calculation 5.3.4.4. Steps to achieve minimal phase noise 5.3.5. A 2GHz Cross-Coupled LC Tank VCO 5.3.5.1. 2GHz cross-coupled LC tank VCO 5.3.5.2. Verifications and discussions 5.3.5.3. Experimental results 5.3.6. A 9.3 ̃10.4GHz Cross-Coupled Complementary Oscillator 5.3.6.1. Phase noise estimation for 10GHzLC tank VCO 5.3.6.2. Experimental results 5.4. Summary References Chapter 6. RF CMOS Phase-Locked Loops 6.1. Fundamental Principles of a Phase-Locked Loop (PLL) 6.2. Transient Characteristics - Tracking 6.3. Loop Bandwidth - Second Order PLL 6.4. Acquisition 6.5. Phase Detector and Loop Filter 6.5.1. Phase Detector 6.5.1.1. Multiplier 6.5.1.2. EXOR gate 6.5.1.3. Flip-flop phase detector 6.5.1.4. Phase frequency detector 6.5.2. Loop Filter 6.6. Charge Pump PLL Filter 6.7. Noise Characteristics of PLL Building Blocks 6.7.1. Phase Noise of VCO 6.7.2. Phase Noise of Reference Input Signal 6.7.3. Phase Noise of Frequency Divider 6.7.4. Phase Noise of Loop Filter 6.7.5. Optimum Loop Bandwidth 6.8. Summary References Chapter 7. RF CMOS Prescalers 7.1. Prescaler 7.1.1. Dual-Modulus Prescaler 7.1.2. Dual-Modulus Prescaler with Pulse Swallow Counter 7.1.3. Integer-N Architecture through Dual-Modulus Prescaler with Pulse Swallow Counter 7.2. DFFs for Prescaler 7.2.1. MCML 7.2.2. CMOS Dynamic Circuit 7.3. Design and Optimization of CMOS Dynamic Circuit (CDC) Based Prescaler 7.3.1. E-TSPC Based Divide-by-2 Unit 7.3.2. E-TSPC Based Divide-by-2/3 Unit 7.3.3. Design Example 7.3.4. Simulation and Silicon Verifications 7.4. Summary References. "With speeds of up to 20-gigabits per second and the ability to support up to one million devices per square kilometer, 5G - the current generation of mobile communications technology - may seem impressive, but 6G is set to take these capabilities even further. Envisioned to deliver a peak data rate of 1 Terabit per second and latency of 100 microseconds or less, 6G must be able to seamlessly and securely deliver data in an ever increasingly saturated network of wireless connections without exceeding the energy requirements of 5G. This book covers every aspect of future communication from key technologies, to design challenges, network requirements and users' experiences to standardization, chip design, and industry applications from 5G to 6G. It presents the requirements and use cases of 6G, RF transceivers roadmap for 2030 and beyond, and modelling of RF devices for 5G/6G applications. In here, a modified Shannon's capacity formula that is critical for future advanced wireless communication such as 6G is discussed for the first time. It also presents the standardization of 6G wireless communication systems with emphasis on Standard Development Organizations (SDOs), regulatory bodies and administrations, ITU, industry forums, and 6G standard timeline. The book presents RF/mm-wave integrated circuit design for future communications to provides readers with an easy-to-understand overview of voltage-controlled oscillators, power amplifiers, low-noise amplifiers, frequency synthesizers, high-frequency dividers, and chip-to-chip communications isolation technology. This book is an excellent reference for readers specializing in electrical & electronic engineering, wireless communication, integrated circuit design, circuits and systems, to learn more about the 5G and even 6G communication standards, and RF/mm-wave IC design. In particularly, professionals working in the foundry, fabless semiconductor company, original equipment manufacturer and integrated device manufacturer will also benefit from this book"-- Provided by publisher "This book addresses in-depth technical issues, limitations, considerations and challenges facing millimeter-wave (MMW) integrated circuit and system designers in designing MMW wireless communication systems from the complementary metal-oxide semiconductor (CMOS) perspective. It offers both a comprehensive explanation of fundamental theories and a broad coverage of MMW integrated circuits and systems. CMOS Millimeter-Wave Integrated Circuits for Next Generation Wireless Communication Systems is an excellent reference for faculty, researchers and students working in electrical and electronic engineering, wireless communication, integrated circuit design and circuits and systems. While primarily written for upper-level undergraduate courses, it is also an excellent introduction to the subject for instructors, graduate students, researchers, integrated circuit designers and practicing engineers. Advanced readers could also benefit from this book as it includes many recent state-of-the-art MMW circuits"-- Provided by publisher This book addresses in-depth technical issues, limitations, considerations and challenges facing millimeter-wave (MMW) integrated circuit and system designers in designing MMW wireless communication systems from the complementary metal-oxide semiconductor (CMOS) perspective. It offers both a comprehensive explanation of fundamental theories and a broad coverage of MMW integrated circuits and systems.CMOS Millimeter-Wave Integrated Circuits for Next Generation Wireless Communication Systems is an excellent reference for faculty, researchers and students working in electrical and electronic engineering, wireless communication, integrated circuit design and circuits and systems. While primarily written for upper-level undergraduate courses, it is also an excellent introduction to the subject for instructors, graduate students, researchers, integrated circuit designers and practicing engineers. Advanced readers could also benefit from this book as it includes many recent state-of-the-art MMW circuits.Related Link(s) "This book provides the most comprehensive and in-depth coverage of the latest circuit design developments in RF CMOS technology. It is a practical and cutting-edge guide, packed with proven circuit techniques and innovative design methodologies for solving challenging problems associated with RF integrated circuits and systems. This invaluable resource features a collection of the finest design practices that may soon drive the system-on-chip revolution. Using this book's state-of-the-art design techniques, one can apply existing technologies in novel ways and to create new circuit designs for the future."--BOOK JACKET.

this Book Provides The Most Comprehensive And In-depth Coverage Of The Latest Circuit Design Developments In Rf Cmos Technology. It Is A Practical And Cutting-edge Guide, Packed With Proven Circuit Techniques And Innovative Design Methodologies For Solving Challenging Problems Associated With Rf Integrated Circuits And Systems. This Invaluable Resource Features A Collection Of The Finest Design Practices That May Soon Drive The System-on-chip Revolution. Using This Book's State-of-the-art Design Techniques, One Can Apply Existing Technologies In Novel Ways And To Create New Circuit Designs For The Future.