کنترل اجزا با استفاده از فناوری‌های سیلیکون، گالیم آرسنید و گالیم نیترید (کتابخانه میکروویو آرتک هاوس)

Control circuits are important parts of RF and microwave systems. Their compact size, high performance, and low cost have played a vital role in the development of cost effective solutions and new applications during the past quarter century. This book provides a comprehensive treatment of such circuits, including device operation and their models, basic circuit theory and designs, and applications. The unique features of this book include in-depth and comprehensive study of control circuits, extensive design equations and figures, treatment of practical aspect of circuits and description of fabrication technologies. It provides you with a broad view of solid state control circuits including various technologies and their comparison and up to date information. Microwave Library Control Components Using Si, GaAs, and GaN Technologies 1 Contents 6 Preface 12 Chapter 1 Introduction 16 1.1 History of Control Components 16 1.2 Types of Control Components 17 1.3 Solid-State Switching Devices 18 1.4 Design of Control Components 20 1.5 Fabrication of Control Components 24 1.6 Applications 27 1.7 Book Organization 29 References 30 Chapter 2 Control Devices 34 2.1 PIN Diodes 34 2.1.1 Operation of PI N Diodes 34 2.1.2 PIN Diode Models 36 2.2 GaAs MESFETs 39 2.2.1 Operation of MESFETs 39 2.2.2 Linear Switch FET Models 41 2.2.3 Nonlinear Switch FET Models 48 2.3 GaAs HE MTs 51 2.4 GaAs HBTs 54 2.5 GaN HE MTs 54 2.6 CMOS Transistors 55 2.6.1 Operation of CMOS Switch 55 2.6.2 Various Body Floating Techniques 57 2.6.3 CMOS Transistor Models 59 2.7 Other Devices 60 2.7.1 Schottky Diodes 61 2.7.2 Varactor Diodes 64 2.8 Transistor Model Scaling 64 2.9 Biasing of Switching Devices 65 2.9.1 Biasing of PIN Diodes 65 2.9.2 Biasing of Transistors 73 2.10 Switching Speed 74 2.10.1 Switching Speed of PIN Diodes 74 2.10.2 Switching Speed of Transistors 76 2.11 Comparison of Switching Devices 77 References 77 Chapter 3 Switches 82 3.1 Introduction 82 3.1.1 Switch Parameters 82 3.1.2 Devices for Switches 84 3.1.3 Basic Requirements of a Switch for Wireless Applications 84 3.2 Design of Switches 85 3.2.1 Types of Switches 85 3.2.2 Switch Configurations 87 3.2.3 Basic Theory of Switches 90 3.3 Multiport Switches 93 3.3.1 Multithrow Switches 93 3.3.2 Matrix Switches 94 3.3.3 Diversity Switch 94 3.4 High Isolation Switches 96 3.5 Broadband Switches 99 3.6 High-Power Switches 101 3.6.1 I mpedance Transformation Technique 103 3.6.2 Stacked FETs Method 105 3.6.3 Resonant Circuit Technique 106 3.6.4 GaN HE MT Switches 107 3.6.5 Power Handling of PIN Diode Switches 108 3.7 Low Distortion Switches 109 3.8 Performance of Switch Circuits 111 3.8.1 PIN Diode Switch Circuits 111 3.8.2 MESFET Switch Circuits 114 3.8.3 HEMT Switch Circuits 116 3.8.4 CMOS Switch Circuits 122 3.8.5 Comparison of Switch Technologies 124 3.9 Novel Switch Configurations 125 3.9.1 Filter-Integrated Switch 125 3.9.2 Redundant Switch 126 3.9.3 Switched Variable Power Amplifier 126 3.9.4 Switches with Integrated Control 128 3.10 Intermodulation Analysis of Switches 128 3.10.1 PIN Diode Switches 129 3.10.2 MESFET Switches 129 References 130 Chapter 4 Phase Shifters 138 4.1 Types of Phase Shifters 138 4.1.1 Digital Phase Shifters 138 4.1.2 Analog Phase Shifters 141 4.1.3 Active Phase Shifters 142 4.2 Theory of Phase Shifters 142 4.2.1 Reflection-Type Phase Shifter 142 4.2.2 Switched-Line Phase Shifter 148 4.2.3 Loaded-Line Phase Shifters 151 4.2.4 Switched-Network Phase Shifters 157 4.2.5 E mbedded-Device Phase Shifters 167 4.3 Multibit Phase Shifter Circuits 170 4.3.1 RMS Errors 170 4.3.2 PIN Diode Phase Shifters 171 4.3.3 MESFET/HEMT Phase Shifters 172 4.3.4 CMOS Phase Shifters 178 4.4 Analog Phase Shifters 180 4.4.1 Voltage-Controlled Reflection-Type Phase Shifters 180 4.4.2 Voltage-Controlled Transmission-Type Phase Shifters 181 4.4.3 Analog Varactor Diode Phase Shifters 184 4.4.4 Analog CMOS Phase Shifters 185 4.5 Broadband Phase Shifters 186 4.5.1 GaAs MESFET/HEMT Broadband Phase Shifters 188 4.5.2 Broadband CMOS Phase Shifters 194 4.6 Ultrawideband Phase Shifters 195 4.7 Millimeter-Wave Phase Shifters 200 4.7.1 PIN/Schottky Diode Millimeter-Wave Phase Shifters 200 4.7.2 MESFET/HE MT Millimeter-Wave Phase Shifters 200 4.7.3 CMOS Millimeter-Wave Phase Shifters 204 4.8 Active Phase Shifters 205 4.8.1 Dual-Gate FET Phase Shifters 206 4.8.2 Switchable-Amplifier Phase Shifters 207 4.8.3 Vector Modulator Phase Shifters 207 References 212 Chapter 5 Attenuators 222 5.1 Introduction 222 5.1.1 Types of Attenuators 222 5.1.2 Theory of Attenuators 225 5.1.3 Fabrication of Attenuators 229 5.2 Fixed Value Attenuators 229 5.2.1 Attenuator Pad 229 5.2.2 Temperature Variable Attenuator 230 5.3 Multibit Attenuators 231 5.3.1 PIN Diode Step Attenuators 232 5.3.2 GaAs MMIC Step Attenuators 233 5.3.3 Si CMOS Step Attenuators 235 5.4 Variable Voltage Attenuators 237 5.4.1 PIN Diode Variable Attenuators 238 5.4.2 MESFET Variable Attenuators 239 5.4.3 CMOS Variable Attenuator 242 5.4.4 GaN HEMT Attenuator 243 5.4.5 Linear Voltage Variable Attenuators 244 5.6 Other Attenuator Circuits 251 5.6.1 Reflection-Type Attenuators 251 5.6.2 Balanced Attenuators 255 5.6.3 Frequency Dependent Attenuators 257 5.6.4 Phase Compensated Attenuators 259 5.6.5 CMOS Attenuator with Integrated Switch 260 5.7 Distortion in Attenuators 260 5.7.1 PIN Diode Attenuators 261 5.7.2 FET Attenuators 262 References 263 Chapter 6 Limiters 268 6.1 Introduction 268 6.1.1 Limiter Characterization 269 6.1.2 Limiter Types 270 6.2 PIN Diode Limiters 274 6.2.1 Analysis of PI N Diode Limiter 274 6.2.2 Si PI N Diode Limiters in Microstrip Configuration 278 6.2.3 GaAs PI N Diode Limiters 280 6.2.4 Matched Limiters 282 6.3 Schottky Diode Limiters 284 6.3.1 Analysis of Schottky Diode Limiter 286 6.3.2 Schottky Diode Design and Limiter Configuration 288 6.3.3 Broadband High Power Limiters 289 6.4 Monolithic GaAs Schottky Diode Limiter Circuits 290 6.4.1 Limiting Amplifiers 291 6.4.2 10-W Limiter with Embedded LNA 293 6.5 Other Diode Limiters 297 6.5.1 BiCMOS Diode Limiter 297 6.5.2 GaN Schottky Diode Limiters 298 References 298 Appendix A: Physical Constants and Frequency Band Designations 302 Appendix B: Thermal Design of Devices 304 B.1 Thermal Basics 304 B.2 Transistor Thermal Design 306 B.2.1 Cooke Model for Single-Gate Devices 306 B.2.2 Cook Model for Multiple-Gate Devices 307 B.2.3 P ulsed Operation 309 B.2.4 Component Assembly Thermal Design Considerations 310 References 311 About the Author 312 Index 314 Si;,GaAs;,GaN;,Microwvwe;,Artech,House;,978-1-60807-711-3 Si,GaAs,GaN,Microwvwe,Artech House,978-1-60807-711-3