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Computational electronics : semiconductor transport and device simulation ; [proceedings of the workshop, Beckman Institute for Advanced Sciences and Technology, University of Illinois at Urbana-Champaign, May 21-23, 1990

معرفی کتاب «Computational electronics : semiconductor transport and device simulation ; [proceedings of the workshop, Beckman Institute for Advanced Sciences and Technology, University of Illinois at Urbana-Champaign, May 21-23, 1990» نوشتهٔ M. R. Pinto, W. M. Coughran Jr., C. S. Rafferty, R. K. Smith, E. Sangiorgi (auth.), K. Hess, J. P. Leburton, U. Ravaioli (eds.)، منتشرشده توسط نشر Springer US در سال 1991. این کتاب در 20 صفحه، فرمت pdf، زبان انگلیسی ارائه شده است.

Large computational resources are of ever increasing importance for the simulation of semiconductor processes, devices and integrated circuits. The Workshop on Computational Electronics was intended to be a forum for the dis­ cussion of the state-of-the-art of device simulation. Three major research areas were covered: conventional simulations, based on the drift-diffusion and the hydrodynamic models; Monte Carlo methods and other techniques for the solution of the Boltzmann transport equation; and computational approaches to quantum transport which are relevant to novel devices based on quantum interference and resonant tunneling phenomena. Our goal was to bring together researchers from various disciplines that contribute to the advancement of device simulation. These include Computer Sci­ ence, Electrical Engineering, Applied Physics and Applied Mathematics. The suc­ cess of this multidisciplinary formula was proven by numerous interactions which took place at the Workshop and during the following three-day Short Course on Computational Electronics. The format of the course, including a number of tutorial lectures, and the large attendance of graduate students, stimulated many discussions and has proven to us once more the importance of cross-fertilization between the different disciplines. Front Matter....Pages i-xiii Front Matter....Pages 1-1 Device Simulation for Silicon ULSI....Pages 3-13 Drift-Diffusion Systems: Variational Principles and Fixed Point Maps for Steady State Semiconductor Models....Pages 15-20 Drift-Diffusion Systems: Analysis of Discretized Models....Pages 21-26 Simulation of a Steady-State Electron Shock Wave in a Submicron Semiconductor Device Using High-Order Upwind Methods....Pages 27-32 Adaptive Mesh Refinement for 2-D Numerical Analysis of Semiconductor Devices....Pages 33-36 Adaptive Grids for Semiconductor Modelling....Pages 37-41 A Numerical Large Signal Model for the Heterojunction Bipolar Transistor....Pages 43-46 The Program OSMOSIS: A Rigorous Numerical Implementation of Augmented Drift-Diffusion Equation for the Simulation of Velocity Overshoot....Pages 47-50 A New Technique for Including Overshoot Phenomena in Conventional Drift-Diffusion Simulators....Pages 51-54 A Self-Consistent Calculation of Spatial Spreading of the Quantum Well in HEMT....Pages 55-58 A New Nonparabolic Hydrodynamic Model with Quantum Corrections....Pages 59-62 The Conditions of Device Simulation using Full Hydrodynamic Equations....Pages 63-66 Front Matter....Pages 67-67 Device Simulation Augmented by the Monte Carlo Method....Pages 69-74 Ensemble Monte Carlo Simulation of Femtosecond Laser Excitation in Semiconductors....Pages 75-80 Dynamics of Photoexcited Carriers in GaAs....Pages 81-86 The DAMOCLES Monte Carlo Device Simulation Program....Pages 87-92 Iterative Spectral Solution of Boltzmann’s Equation for Semiconductor Devices....Pages 93-95 Computer Experiments for High Electron Mobility Transistors and Avalanching Devices....Pages 97-105 Minority Electron Transport Across Submicron Layers of GaAs and InP....Pages 107-110 Photoconductive Switch Simulation with Absorbing Boundary Conditions....Pages 111-114 Front Matter....Pages 67-67 Simulation of Sub-Micron GaAs MESFETs for Microwave Control....Pages 115-118 Eigenvalue Solution to Steady-State Boltzmann Equation....Pages 119-122 Variable Threshold Heterostructure FET Studied by Monte Carlo Simulation....Pages 123-126 A Study of the Relaxation-Time Model based on the Monte Carlo Simulation....Pages 127-130 Field Assisted Impact Ionization in Semiconductors....Pages 131-136 Parallelization of Monte Carlo Algorithms in Semiconductor Device Physics on Hypercube Multiprocessors....Pages 137-140 Comparative Numerical Simulations of a GaAs Submicron FET using The Moments of the Boltzmann Transport and Monte Carlo Methods....Pages 141-144 J-V Characteristics of Graded Al x Ga 1-x As Heterojunction Barriers Using the Self Consistent Ensemble Monte Carlo Method....Pages 145-148 Monte Carlo Simulation of Lateral Surface Superlattices in a Magnetic Field....Pages 149-152 Quantum-Well Infrared Photodetectors: Monte Carlo Simulations of Transport....Pages 153-156 Simulation of non-stationary electron transport using scattering matrices....Pages 157-160 Rigid Pseudo-Ion Calculation of the Intervalley Electron-Phonon Interaction in Silicon....Pages 161-164 Numerical Study of High Field Transport in SiO 2 with Traps: A Coupled Monte Carlo and Rate Equation Model....Pages 165-168 Transient Monte Carlo Simulation of Heterojunction Microwave Oscillators....Pages 169-172 Monte Carlo Simulations for Submicron InP Two-Terminal Transferred Electron Devices....Pages 173-176 Monte Carlo Simulation of Low-Dimensional Nanostructures....Pages 177-180 Front Matter....Pages 181-181 Many-Body Effects and Density Functional Formalism in Nanoelectronics....Pages 183-188 Modeling InAs/GaSb/AlSb interband tunnel structures....Pages 189-194 Quantum Kinetic Theory of Tunneling Devices....Pages 195-200 Transport in Electron Waveguides: Filtering and Bend Resistances....Pages 201-206 Front Matter....Pages 181-181 Numerical Methods for the Simulation of Quantum Devices Using the Wigner Function Approach....Pages 207-213 Density Matrix Coordinate Representation Numerical Studies of Quantum Well and Barrier Devices....Pages 215-218 A Distribution-Function Approach in the Many-Body Quantum Transport Theory of Quantum-Based Devices....Pages 219-222 The Generalized Scattering Matrix Approach: An Efficient Technique for Modeling Quantum Transport in Relatively Large and Heavily Doped Structures....Pages 223-226 Quantum Ray Tracing: A New Approach to Quantum Transport in Mesoscopic Systems....Pages 227-230 On Transport in Heterostructures within the Independent-Particle Picture....Pages 231-234 Transient Response in Mesoscopic Devices....Pages 235-238 The Inclusion of Scattering in the Simulation of Quantum Well Devices....Pages 239-242 Numerical Study of Electronic States in a Quantum Wire at Crossing Heterointerfaces....Pages 243-246 Dissipative Quantum Transport in Electron Waveguides....Pages 247-250 Exchange Energy Interactions in Quantum Well Heterostructures....Pages 251-254 Asymptotic Structure of the Density-Gradient Theory of Quantum Transport....Pages 255-258 Calculation of Transport Through Ballistic Quantum Structures....Pages 259-262 Numerical Study of the Higher Order Moments of Conductance Fluctuations in Mesoscopic Structures....Pages 263-266 Back Matter....Pages 267-268
دانلود کتاب Computational electronics : semiconductor transport and device simulation ; [proceedings of the workshop, Beckman Institute for Advanced Sciences and Technology, University of Illinois at Urbana-Champaign, May 21-23, 1990