پولیش مکانیکی شیمیایی در پردازش سیلیکون، جلد ۶۳ (نیمه‌هادی‌ها و نیمه‌فلزات)

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. Chemical Mechanical Polishing in Silicon Processing......Page 4 Copyright Page......Page 5 Contents......Page 6 Preface......Page 12 List of Contributors......Page 16 I. CMP: A Unique and Evolving Semiconductor Fabrication Technology—Past, Present, and Future......Page 18 I. Introduction......Page 22 II. CMP Equipment Design Evolution......Page 25 III. Carriers......Page 33 IV. Platens......Page 41 V. Pad Conditioning......Page 42 VI. CMP Equipment Integration......Page 47 VII. Copper Polishing and CMP Tool Requirements......Page 55 VIII. 300-mm CMP Tools......Page 57 IX. Conclusion......Page 58 References......Page 59 I. Introduction......Page 64 III. Slurry Distribution System Overview......Page 65 IV. Slurry Handling......Page 66 V. Slurry Distribution Systems......Page 69 VI. Slurry Dispense Engines......Page 70 VII. Slurry Blending Technology......Page 71 VIII. Slurry Measuring Techniques......Page 72 IX. Daytank Replenishment......Page 76 X. Mix Order......Page 78 XI. Piping Systems......Page 79 XII. Piping System Variations......Page 80 XIII. Materials of Construction......Page 81 XIV. Slurry Settling......Page 82 XVI. Pressure and Flow Consistency......Page 83 XVII. Back-Pressure Devices......Page 84 XVIII. Slurry Consumption Ramp......Page 85 XX. Valve Boxes......Page 86 XXI. Storage Tanks......Page 88 XXII. Agitation......Page 91 XXIII. Metrology......Page 93 XXIV. Filtration......Page 95 XXV. Slurry System Maintenance......Page 100 XXVI. Waste Disposal......Page 101 References......Page 104 I. Introduction......Page 106 II. Wafer-Scale Models......Page 107 III. Patterned Wafer CMP Modeling......Page 115 IV. Die-Level Modeling of Ild CMP......Page 121 V. Models for Metal Polishing......Page 142 VI. Summary and Status......Page 149 References......Page 150 I. Introduction......Page 156 II. Abrasives......Page 157 III. Slurry Solution......Page 163 IV. Comparisons Among Slurries......Page 167 References......Page 170 I. Introduction......Page 172 II. Classes of Pads and Their Manufacture......Page 173 III. Structure, Properties, and Their Relationship to the Polishing Process......Page 179 IV. Application to Semiconductor Processing......Page 187 References......Page 197 I. Introduction......Page 200 III. Cleaning Requirements after CMP Processes......Page 201 IV. Corrosion Effects......Page 203 V. Slurry Removal......Page 210 VI. Metallic Contamination Removal......Page 223 VII. Damaged Layer Removal......Page 225 IX. Examples of Practical Post-CMP Cleaning Processes......Page 227 References......Page 230 I. Introduction......Page 232 II. Reflectometry......Page 233 III. Defectivity Monitoring......Page 243 IV. Noncontact Capacitive Measurement......Page 246 V. Total X-Ray Fluorescence......Page 250 VII. Atomic Force Microscopy......Page 253 VIII. Four-Point Probe......Page 258 References......Page 260 I. Introduction......Page 262 II. Oxide CMP Within-Wafer Nonuniformity (WIWNU)......Page 263 III. Post-CMP Oxide Thickness Control......Page 279 IV. Defectivity......Page 282 V. Tungsten CMP Problems......Page 290 VI. Other Problems......Page 294 References......Page 297 Index......Page 300 Contents of Volumes in This Series......Page 306 Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry Chemical mechanical planarization (CMP) has become, in a few short years, a required semiconductor processing module used in fabrication facilities worldwide.