وبلاگ بلیان

Beyond Binary Memory Circuits : Multiple-Valued Logic

معرفی کتاب «Beyond Binary Memory Circuits : Multiple-Valued Logic» نوشتهٔ Zarin Tasnim Sandhie, Farid Uddin Ahmed, Masud H. Chowdhury، منتشرشده توسط نشر Springer International Publishing Springer در سال 2022. این کتاب در فرمت pdf، زبان انگلیسی ارائه شده است. «Beyond Binary Memory Circuits : Multiple-Valued Logic» در دستهٔ بدون دسته‌بندی قرار دارد.

translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. The use of general descriptive names, registered names, trademarks, service marks, etc. in this publication does not imply, even in the absence of a specific statement, that such names are exempt from the relevant protective laws and regulations and therefore free for general use. The publisher, the authors, and the editors are safe to assume that the advice and information in this book are believed to be true and accurate at the date of publication. Neither the publisher nor the authors or the editors give a warranty, expressed or implied, with respect to the material contained herein or for any errors or omissions that may have been made. The publisher remains neutral with regard to jurisdictional claims in published maps and institutional affiliations. Preface 7 About the Subject 7 About This Book 8 Organization of the Book 9 Acknowledgements 10 Contents 11 About the Authors 14 Abbreviations 16 List of Figures 18 List of Tables 20 1 Background and Future of Multiple Valued Logic 21 1.1 Introduction 21 1.2 What is Multiple-Valued Logic 23 1.3 Computational Advantages of MVL System 23 1.4 Historical Background 24 1.5 Scopes of MVL Technology 25 1.5.1 Arithmetic Circuit Design 26 1.5.2 Memory Circuit Design 27 1.5.3 Quantum Computing 27 1.5.4 High-Speed Signaling 28 1.5.5 Cloud Based Computing Platform 28 1.5.6 Other Applications of MVL System 29 1.6 Challenges of MVL System 30 1.7 Future Direction 30 1.8 Conclusion 31 References 31 2 Mathematical Representation of Multi Valued Logic 34 2.1 Definition and Signal Representation 34 2.2 Basic Algebraic Operators for MVL 34 2.3 Synthesis Technique of MVL 37 2.4 Conclusion 39 References 39 3 Overview of Different Technologies for Multiple-Valued Memory 41 3.1 Planar MOSFET Technology 41 3.1.1 Operating Principle 41 3.1.2 Analysis 43 3.2 Silicon on Insulator (SOI) and Fin Field Effect Transistor (FinFET) 45 3.2.1 Fully Depleted Silicon-on-Insulator (FDSOI) 45 3.2.2 Fin Field Effect Transistor (FinFET) 46 3.2.3 Analysis 47 3.3 Resonant Tunneling Diode (RTD) Technology 47 3.3.1 Operating Principle 47 3.3.2 Analysis 50 3.4 Single Electron Transistor (SET) Technology 50 3.4.1 Operating Principle 50 3.4.2 Analysis 53 3.5 Carbon Based Technologies: CNTFET and GNRFET 53 3.5.1 Operating Principle 53 3.5.2 Analysis 55 3.6 Memristor 56 3.6.1 Operating Principle 56 3.6.2 Analysis 57 3.7 Magnetic Tunnel Junction (MTJ) 57 3.7.1 Operating Principle 57 3.7.2 Analysis 58 3.8 Neuron Metal Oxide Semiconductor (Neuron-MOS) 59 3.8.1 Operating Principle 59 3.8.2 Analysis 59 3.9 Conclusion 60 References 60 4 MVL Sequential Circuits 64 4.1 Introduction 64 4.2 Ternary D-Latch 65 4.3 Ternary D Flip-Flop 68 4.3.1 Positive Edge Triggered D Flip-Flap-Flop 68 4.4 Analysis 70 4.5 Application of Ternary Sequential Circuits 72 4.6 Conclusion 73 References 73 5 MVL Random Access Memory 76 5.1 Introduction 76 5.2 Static Random-Access Memory (SRAM) 77 5.2.1 Design 1 of a Ternary SRAM 77 5.2.2 Design 2 of a Ternary SRAM 79 5.2.3 Analysis 80 5.3 Dynamic Random-Access Memory (DRAM) 80 5.3.1 Design 1 a Ternary DRAM 82 5.3.2 Design 2 a Ternary DRAM 83 5.3.3 Analysis 84 5.4 Multi-level Dynamic Random-Access Memory (MLDRAM) 85 5.4.1 MLDRAM Design Proposed by Gillingham 86 5.4.2 Analysis 90 5.5 Conclusion 90 References 90 6 MVL Flash Memory 93 6.1 Introduction 93 6.2 Floating Gate MOS (FGMOS) 93 6.3 ETOX Flash 95 6.4 NAND and NOR Flash Memory 95 6.5 Multi-level Memory Cell Concept 96 6.5.1 Working Principle of Multi-valued Flash Memory 96 6.5.2 Planar Versus Vertical NAND 98 6.6 Conclusion 100 References 100 7 Ternary Content Addressable Memory 102 7.1 Introduction 102 7.2 Operation of Content-Addressable Memory (CAM) 103 7.3 Binary Versus Ternary CAM 104 7.4 Analysis 106 References 109 This book provides readers with an overview of the fundamental definitions and features of Multiple-Valued Logic (MVL). The authors include a brief discussion of the historical development of MVL technologies, while the main goal of the book is to present a comprehensive review of different technologies that are being explored to implement multiple-valued or beyond-binary memory circuits and systems. The discussion includes the basic features, prospects, and challenges of each technology, while highlighting the significant works done on different branches of MVL memory architecture, such as sequential circuits, random access memory, Flash memory, etc.
دانلود کتاب Beyond Binary Memory Circuits : Multiple-Valued Logic