Advanced Semiconductor Devices: Proceedings of the 2006 Lester Eastman Conference (Selected Topics in Electronics and Systems)

this Volume Covers Five Emerging Areas Of Advanced Device Technology: Wide Band Gap Devices, Terahertz And Millimeter Waves, Nanometer Silicon And Silicon-germanium Devices, Nanoelectronics And Ballistic Devices, And The Characterization Of Advanced Photonic And Electronic Devices. The Papers By Leading Researchers In High Speed And Advanced Electronic And Photonic Technology Presented Many Firsts And Breakthrough Results, As Has Become A Tradition With The Lester Eastman Conference, And Will Allow Readers To Obtain Up-to-date Information About Emerging Trends And Future Directions Of These Technologies. Key Papers In Each Section Present Snap-shot And Mini Reviews Of State-of-the-art And Hot Off The Press Results Making The Book Required Reading For Engineers, Scientists, And Students Working On Advanced And High Speed Device Technology. I. Wide band gap devices. Wide-Bandgap Semiconductor devices for automotive applications / M. Sugimoto [und weitere]. A GaN on SiC HFET device technology for wireless infrastructure applications / B. Green [und weitere]. Drift velocity limitation in GaN HEMT channels / A. Matulionis. Simulations of field-plated and recessed gate gallium nitride-based heterojunction field-effect transistors / V.O. Turin, M.S. Shur and D.B. Veksler. Low temperature electroluminescence of green and deep green GaInN/GaN light emitting diodes / Y. Li [und weitere]. Spatial spectral analysis in high brightness GaInN/GaN light emitting diodes / T. Detchprohm [und weitere]. Self-induced surface texturing of Al2O3 by means of inductively coupled plasma reactive ion etching in Cl2 chemistry / P. Batoni [und weitere]. Field and termionic field transport in aluminium gallium arsenide heterojunction barriers / D.V. Morgan and A. Porch. Electrical characteristics and carrier lifetime measurements in high voltage 4H-SiC PiN diodes / P.A. Losee [und weitere]. Geometry and short channel effects on enhancement-mode n-Channel GaN MOSFETs on p and n- GaN/sapphire substrates / W. Huang, T. Khan and T.P. Chow. 4H-SiC Vertical RESURF Schottky Rectifiers and MOSFETs / Y. Wang, P.A. Losee and T.P. Chow. Present status and future Directions of SiGe HBT technology / M.H. Khater [und weitere]Optical properties of GaInN/GaN multi-quantum Wells structure and light emitting diode grown by metalorganic chemical vapor phase epitaxy / J. Senawiratne [und weitere]. Electrical comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic contacts on undoped GaN HEMTs structure with AlN interlayer / Y. Sun and L.F. Eastman. Above 2 A/mm drain current density of GaN HEMTs grown on sapphire / F. Medjdoub [und weitere]. Focused thermal beam direct patterning on InGaN during molecular beam epitaxy / X. Chen, W.J. Schaff and L.F. Eastman -- II. Terahertz and millimeter wave devices. Temperature-dependent microwave performance of Sb-heterostructure backward diodes for millimeter-wave detection / N. Su [und weitere]. A Mixed-signal row/Column architecture for very large monolithic mm-wave phased arrays / C. Carta, M. Seo and M. Rodwell. Terahertz emission from electrically pumped silicon germanium itersubband devices / N. Sustersic [und weitere]. Terahertz sensing of materials / G. Xuan [und weitere] -- III. silicon and SiGe devices. Negative bias temperature instability in TiN/HF-Silicate based gate stacks / N.A. Chowdhury, D. Misra and N. Rahim. Power adaptive control of dense configured super-self-aligned back-gate planar transistors / H. Lin [und weitere]. Non-volatile high speed & low power charge trapping devices / M.K. Kim and S. Tiwari. High performance SiGeC/Si Near-IR electrooptic modulators and photodetectors / M. Schubert and F. Rana -- III. Silicon and SiGe devices. Negative bias temperature instability in TiN/HF-Silicate based gate stacks / N.A. Chowdhury, D. Misra and N. Rahim. Power adaptive control of dense configured super-self-aligned back-gate planar transistors / H. Lin [und weitere]Non-volatile high speed & low power charge trapping devices / M.K. Kim and S. Tiwari. High performance SiGeC/Si Near-IR electrooptic modulators and photodetectors / M. Schubert and F. Rana -- IV. Nanoelelectronics and ballistic devices. Hybrid nanomaterials for multi-spectral infrared photodetection / A.D. Stiff-Roberts. Ballistic electron acceleration negative-differential-conductivity devices / B. Aslan [und weitere] -- V. Photoluminescence and photocapacitance. Understanding ultraviolet emitter performance using intensity dependent Time-Resolved photoluminescence / M. Wraback [und weitere]. Photocapacitance of selectively doped AlGaAs/GaAs heterostructures containing deep traps / N.B. Gorev [und weitere] Annotation. The Proceedings cover five emerging areas of advanced device technology: wide band gap devices, terahertz and millimeter waves, nanometer silicon and silicongermanium devices, nanoelectronics and ballistic devices, and characterization of advanced photonic and electronic devices. The papers by leading researchers in high speed and advanced electronic and photonic technology presented many "first" and break-through results, as has become a tradition with the Lester Eastman Conference and will allow readers to get up-to-date information about emerging trends and future directions of these technologies. Key papers in each section present snap-shot and mini reviews of the state-of-the art and of "hot off the press" results making the book to be required reading for engineers, scientists, and students working on advanced and high speed device technology. Book jacket La 4e de couverture indique : This volume covers five emerging areas of advanced device technology: wide band gap devices, terahertz and millimeter waves, nanometer silicon and silicon-germanium devices, nanoelectronics and ballistic devices, and the characterization of advanced photonic and electronic devices. The papers by leading researchers in high speed and advanced electronic and photonic technology presented many “firsts” and breakthrough results, as has become a tradition with the Lester Eastman Conference, and will allow readers to obtain up-to-date information about emerging trends and future directions of these technologies. Key papers in each section present snap-shot and mini reviews of state-of-the-art and “hot off the press” results making the book required reading for engineers, scientists, and students working on advanced and high speed device technology