3-Dimensional Process Simulation

Whereas two-dimensional semiconductor process simulation has achieved a certain degree of maturity, three-dimensional process simulation is a newly emerging field in which most efforts are dedicated to necessary basic developments. Research in this area is promoted by the growing demand to obtain reliable information on device geometries and dopant distributions needed for three-dimensional device simulation, and challenged by the great algorithmic problems caused by moving interfaces and by the requirement to limit computation times and memory requirements. A workshop (Erlangen, September 5, 1995) provided a forum to discuss the industrial needs, technical problems, and solutions being developed in the field of three-dimensional semiconductor process simulation. Invited presentations from leading semiconductor companies and research Centers of Excellence from Japan, the USA, and Europe outlined novel numerical algorithms, physical models, and applications in this rapidly emerging field. Front Matter....Pages i-viii Three-Dimensional Topography Simulator: 3D-MULSS and Its Applications....Pages 1-29 A Three-Dimensional Process Simulation using Advanced SMART-P program....Pages 30-56 3-D Topography Simulation Using Surface Representation and Central Utilities....Pages 57-76 Three-Dimensional Simulation of Thermal Processes....Pages 77-94 3D Process Simulation at IEMN/ISEN....Pages 95-108 3D Simulation of Topography and Doping Processes at FhG....Pages 109-135 3D TCAD at TU Vienna....Pages 136-161 Multi-Dimensional TCAD: The PROMPT/DESSIS Approach....Pages 162-177 3D Process Simulation Requirements And Tradeoffs From Industrial Perspective....Pages 178-195 Back Matter....Pages 196-196